Hall effect in organic layered conductors

The Hall effect in organic layered conductors with a multisheeted Fermi surfaces was considered. It is shown that the experimental study of Hall effect and magnetoresistance anisotropy at different orientations of current and a quantizing magnetic field relative to the layers makes it possible to...

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Datum:2006
Hauptverfasser: Hasan, R.A., Kartsovnik, M.V., Peschansky, V.G.
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Sprache:English
Veröffentlicht: Інститут фізики конденсованих систем НАН України 2006
Schriftenreihe:Condensed Matter Physics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/121308
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Zitieren:Hall effect in organic layered conductors / R.A. Hasan, M.V. Kartsovnik, V.G. Peschansky // Condensed Matter Physics. — 2006. — Т. 9, № 1(45). — С. 145-150. — Бібліогр.: 13 назв. — англ.

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spelling irk-123456789-1213082017-06-15T03:05:15Z Hall effect in organic layered conductors Hasan, R.A. Kartsovnik, M.V. Peschansky, V.G. The Hall effect in organic layered conductors with a multisheeted Fermi surfaces was considered. It is shown that the experimental study of Hall effect and magnetoresistance anisotropy at different orientations of current and a quantizing magnetic field relative to the layers makes it possible to determine the contribution of various charge carriers groups to the conductivity, and to find out the character of Fermi surface anisotropy in the plane of layers 2006 Article Hall effect in organic layered conductors / R.A. Hasan, M.V. Kartsovnik, V.G. Peschansky // Condensed Matter Physics. — 2006. — Т. 9, № 1(45). — С. 145-150. — Бібліогр.: 13 назв. — англ. 1607-324X PACS: 72.15.Gd, 75.70.Cn DOI:10.5488/CMP.9.1.145 http://dspace.nbuv.gov.ua/handle/123456789/121308 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The Hall effect in organic layered conductors with a multisheeted Fermi surfaces was considered. It is shown that the experimental study of Hall effect and magnetoresistance anisotropy at different orientations of current and a quantizing magnetic field relative to the layers makes it possible to determine the contribution of various charge carriers groups to the conductivity, and to find out the character of Fermi surface anisotropy in the plane of layers
format Article
author Hasan, R.A.
Kartsovnik, M.V.
Peschansky, V.G.
spellingShingle Hasan, R.A.
Kartsovnik, M.V.
Peschansky, V.G.
Hall effect in organic layered conductors
Condensed Matter Physics
author_facet Hasan, R.A.
Kartsovnik, M.V.
Peschansky, V.G.
author_sort Hasan, R.A.
title Hall effect in organic layered conductors
title_short Hall effect in organic layered conductors
title_full Hall effect in organic layered conductors
title_fullStr Hall effect in organic layered conductors
title_full_unstemmed Hall effect in organic layered conductors
title_sort hall effect in organic layered conductors
publisher Інститут фізики конденсованих систем НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121308
citation_txt Hall effect in organic layered conductors / R.A. Hasan, M.V. Kartsovnik, V.G. Peschansky // Condensed Matter Physics. — 2006. — Т. 9, № 1(45). — С. 145-150. — Бібліогр.: 13 назв. — англ.
series Condensed Matter Physics
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first_indexed 2025-07-08T19:37:29Z
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fulltext Condensed Matter Physics 2006, Vol. 9, No 1(45), pp. 145–150 Hall effect in organic layered conductors R.A.Hasan1, M.V.Kartsovnik2, V.G.Peschansky1,3 1 V.N.Karazin Kharkiv national university Svoboda Sqr., 4, Kharkiv 61077, Ukraine 2 Walther-Meissner Institute, Walther-Meissner Str. 8, D–85748 Garching, Germany 3 B.I.Verkin Institute for Low Temperature Physic and Engineering Lenin Ave., 47, Kharkiv 61103, Ukraine Received July 18, 2005, in final form February 13, 2006 The Hall effect in organic layered conductors with a multisheeted Fermi surfaces was considered. It is shown that the experimental study of Hall effect and magnetoresistance anisotropy at different orientations of current and a quantizing magnetic field relative to the layers makes it possible to determine the contribution of various charge carriers groups to the conductivity, and to find out the character of Fermi surface anisotropy in the plane of layers Key words: Hall effect, organic layered conductors, multisheeted Fermi surface PACS: 72.15.Gd, 75.70.Cn Galvanomagnetic phenomena in degenerated conductors placed in a strong magnetic field B, when cyclotron frequency of electrons ωB considerably exceeds their collision frequency 1/τ , are very sensitive to the form of the electron energy spectrum [1,2]. Experimental studies of the mag- netoresistance anisotropy were successfully utilized as a simple spectroscopic method for the re- construction of the Fermi surface (FS) topology. Investigations of the Hall effect provide important information about the charge carriers. In conductors with reduced dimensionality, the Hall effect manifests itself in the manner essentially different from the conventional metals. For example, in two-dimensional structures, the Hall field orthogonal to the current density on the magnitude of quantizing magnetic field has got a step like form [3,4]. At the same time, in quasi-isotropic con- ductors, at ωBτ � 1, the orbital quantization of electrons in a magnetic field being taken into account does not essentially effect the magnitude of the Hall field. In uncompensated metals with closed FS ε(p) = εF, the Hall field orthogonal to the current J, in collisionless limit (τ → ∞), has the following asymptotic form EHall = [J × B] Nec . (1) The corrections to the Hall field, arising from the quantization of electron energy in the magnetic field, occur only in the following approximations in the small parameter γ = 1/ωBτ � 1. Here e is the electron charge, c is the velocity of light in vacuum, N = N1−N2, N1 is the number of electrons in a unit volume, and N2 is the number of holes, whose velocity vector v = ∂ε(p)/∂p is directed within the closed concavity of isoenergetic surface. In stationary electric E and magnetic fields, the drift velocity of charge carriers in a plane, orthogonal to the magnetic field, is identical to all conduction electrons u = c [E× B] B2 . (2) Since the directions of motion along the closed orbits of charge carriers ε(p) = const, pB = pB/B = const in the electronic and hole state are different, the current density in collisionless c© R.A.Hasan, M.V.Kartsovnik, V.G.Peschansky 145 R.A.Hasan, M.V.Kartsovnik, V.G.Peschansky limit takes the form J = N1eu− N2eu, (3) which in view of the relation (2) gives an asymptotical expression (1) for the Hall field. This result has been obtained by I.M. Lifshits [5] in one of the first theoretical papers devoted to the analysis of galvanomagnetic phenomena in metals with arbitrary dispersion law of charge carriers in the quantizing magnetic field. The asymptote of Hall field (1) at γ � 1 is also valid in the case of the FS in the form of corrugated cylinder even in the presence of open sections of this surface in a magnetic field, orthogonal to the axis of the cylinder [6]. This is connected with the fact that the drift of charge carriers along the open orbits in the plane, orthogonal to the magnetic field, turns out to be compensated in the expression for the current density in collisionless limit. In the case of more complicated open FS, for example a space or plane nets of cylinders, the asymptote of Hall field cannot be described by the general expression (1) and essentially depends on the orientation of the magnetic field. The reason is that in this case, depending on the magnetic field direction, the same state of charge carriers can be either an electron or a hole [1]. FS of the organic conductors with layered structure is open and weakly corrugated along the momentum projection pz = pn on the normal to layers n. Quasi-two-dimensional character of electron energy spectrum of layered conductors essentially distinguishes them from the perfect two- dimensional structures, as well as from quasi-isotropic metals. Let us consider Galvanomagnetic phenomena in organic layered conductors with an arbitrary dispersion law of charge carriers ε(p) = ∑ ∞ n=0 εn(px, py)cos(anpz ~ + αn(px, py)); (4) εn(−px,−py) = εn(px, py), αn(−px,−py = −αn(px, py). It is assumed that the functions εn(px, py) and αn(px, py) are arbitrary, and εn(px, py) is rapidly decreasing with the number n, so that the maximum value of function {ε(p) − ε0(px, py)}, which is equal to ηεF on the Fermi surface, is much smaller than the Fermi energy εF max {ε(p) − ε0(px, py)} = ηεF � εF . (5) Here a is the spacing between adjacent layers, ~ is Planck’s constant. Experimental observation of Shubnikov-de Haas oscillations (SdH) in the magnetoresistance of practically all layered conductors of an organic origin over a wide interval of the angles θ between the vectors B and n proves that at least one cavity of their FS is a slightly corrugated cylinder. Velocity distributions of charge carriers in the plane of layers for such FS have no essential anisotropy, and for the sake of convenience of evaluations we suppose that the function ε0(px, py) is isotropic and of the form ε0(px, py) = p2 x + p2 y 2m , (6) moreover, all the rest functions εn(px, py) with n � 1 are equal to stationary values. By making use of the equation of motion of a charge in the magnetic field B = (B cosϕ sin θ, B sin ϕ sin θ, B cos θ), ∂px ∂t = eB cos θ c (vy − vz sinϕ tan θ), (7) ∂py ∂t = eB cos θ c (vz cosϕ tan θ − vy), (8) it is easy to find the contribution to the components of conductivity tensor σij from a group of charge carriers whose states belong to a sheet of the FS having the form of a slightly corrugated cylinder σxx = γ2σ0 1 + γ2 + σzz tan2 θ (1 + γ2) 2 (cos2 ϕ − γ2 sin2 ϕ); (9) 146 Hall effect in organic layered conductors σyy = γ2σ0 1 + γ2 + σzz tan2 θ (1 + γ2) 2 (sin2 ϕ − γ2 cos2 ϕ); (10) σxy = γσ0 1 + γ2 + σzz tan2 θ 1 + γ2 (sin ϕ cosϕ − γ 1 + γ2 ); (11) σyz = σzz tan θ 1 + γ2 (sin ϕ − γ cosϕ); (12) σzx = σzz tan θ 1 + γ2 (cos ϕ − γ sin ϕ); (13) where γ = 1/ωBτ , ωB = eB cos θ/mc coincides with the cyclotron frequency of electrons in the magnetic field in the leading approximation in the energy spectrum quasi-two-dimensionality pa- rameter η. When the FS of a layered conductor consists only of one cylinder, the Hall field linearly grows with the magnetic field [6,7] and quantum oscillations in the strong magnetic field arise only in the following approximations in parameter γ, the same as in uncompensated metals. A considerable group of layered organic conductors have multisheeted FS, and therefore con- sist of various topological elements such as corrugated cylinders and planes slightly corrugat- ed along pz axis. For example, such is the FS of organic conductors based on tetrathiafulvalene (BEDT − TTF)2M(SCN)4 , where M is one of the metals Na, K, Tl, or NH3. One can choose the coordinate system so that the plane adjoining the slightly corrugated planes of the FS is parallel to the pypx plane. At any orientation of a magnetic field there are open sections of corrugated plane pB = const, and charge carriers drift along the open trajectories, generally, along x axis with the velocity vx = c(py(0) − py(T )) TeB cos θ . (14) Time T can be interpreted as the time of an electron motion along the open trajectory in the momentum space for a distance about the period along py axis or pz axis. After averaging the equation of motion of charge (8) over a sufficiently long time interval about the order of the mean free time of electron τ , one can obtain the following relation: vy = vz sin ϕ tan θ, (15) therefore, at angles θ noticeably different from π/2, the drift of charge carriers along y axis is rather small. When the current flows along the x axis, the main contribution to the total electric conductivity σij = σ (1) ij + σ (2) ij , (16) is made by charge carriers, whose states belong to the corrugated plane of FS. Here, the matrix σ(2)ij takes into account the contribution to electric conductivity tensor from charge carriers whose states belong to the corrugated cylinder, and the components of conductivity tensor σ(1)ij are due to the presence of additional group of charge carriers belonging to the FS in the form of slightly corrugated planes. The asymptote of the component in a strong magnetic field is equal to σ1. And, as follows from relation (14), it has the same order as in the absence of magnetic field. Keeping in mind the relation (15), it is not hard to show that σ(1) yy = σ(1) zz sin2 ϕ tan2 θ + γ2 1σ2 , (17) where σ2 is the magnitude of the same order as σ1, and γ1 = T/2πτ . Hereinafter, we shall not distinguish γ and γ1 in the expression for σij in a sufficiently high magnetic field. The non-diagonal component σ (1) xy is much smaller than σ (2) xy . And its asymptote in the high magnetic field σ(1) xy = 2e2 (2π~)3 ∫ 2π~ cos θ/a 0 dpH c eH cos2 θ ∫ py(T )−py(0) 0 (px − px)dpy , (18) 147 R.A.Hasan, M.V.Kartsovnik, V.G.Peschansky is determined by the degree of corrugation of the FS plane pxpy. Here px is the average value of px(t) on the electronic orbit, and so the integrand is sign-variable. There are sufficient grounds to consider that the energy spectrum of charge carriers with a FS in the form of corrugated planes in the above mentioned salts is quasi-one-dimensional [8,9]. In this case σ2 � σ1 and Hall components of the magnetoresistance tensor takes the form ρxy = H cos θ Nec(1 + σ1/σ0) , ρzx = H sin θ sin ϕ Nec(1 + σ1/σ0) , (19) ρyz = H cosϕ sin θ Nec − H2 sin ϕ sin 2θ 2(Nec)2 σ1 σ1 + σ0 , (20) where N is the density of carrier group whose states belong to a slightly corrugated cylinder. The studies of Hall field together with the dissipation components of the magnetoresistance tensor [10] ρxx = 1 σ1 + σ0 ; ρyy = 1 σ0 + H2σ1 cos2 θ (Nec)2(1 + σ1/σ0) (21) allow us to separately determine the contributions to electric conductivity from various groups of charge carriers. At rather low temperatures when the distance between quantized Landau levels exceeds the temperature smearing of the Fermi distribution function of charge carriers, the collision frequency of electrons with FS in the form of cylinder exhibits a quantum oscillation 1 τ = 1 τ0 (1 + ∆osc), (22) where ∆osc is the quantum correction to the collision frequency of the electrons, oscillating as a function of 1/H [11–13]. At the same time, the charge carriers whose states belong to the corrugated plane do not give any contribution to quantum oscillation effect as their energy distribution is essentially continuous. Although these charge carriers do not participate in forming SdH oscillations, their presence results in a substantial growth of the amplitude of the Hall field quantum oscillations. In conductors with multi-sheeted FS, the relative amplitude of the Hall field oscillations Eosc Hall Emon Hall = ∆osc σ1 σ1 + σ0 (23) is of the same order of magnitude as the magnitoresistanse oscillations. In magnetic fields substantially accessible and satisfying the requirement η � γ � 1 (24) it is easy to perform quite informative formulas for the ratio of Hall field and the electric field along the current under the most general assumptions concerning the dispersion law of charge carriers. In the expansion of the magnetoresistance tensor components ratio Eβ/Eα = ρβα/ραα in terms of γ, in this work we will neglect the terms proportional to γ2 as small corrections. Therefore, we shall keep just the first two summands. In this approximation, when current flows along the x axis, i.e. α = x, the ratio of non-diagonal Hall components of the electroresistance tensor ρβx and ρxx take the form: ρyx ρxx = − σxy σyy ; ρzx ρxx = − cosϕ tan θ + σxy σyy . (25) Besides, the linear growth in the magnetic field Ez contains the terms that depend just on the orientation of this magnetic field. 148 Hall effect in organic layered conductors When the current flow along the Hall field is directed predominantly along the normal to the layers and quadratically grows in the magnetic field as well as the electric field along the current Ey, until sinϕ � γ ρzy ρyy = − sinϕ tan θ − σxy σ1 cosϕ tan θ ; ρxy ρyy = σzz σ1 tan2 θ sin ϕ cosϕ + σxy σ1 . (26) The magnetoresistance across the layers ρzz, with a sufficient order of accuracy, is equal to 1/σzz. Therefore, knowing ρzz, it is possible to determine σ1 using the component of the expression (26) independent of B for ρxy/ρyy. The main contribution to the component of conductivity tensor σxy = σ (1) xy + σ (2) xy is made by charge carriers, whose states belong to the corrugated cylinder of FS, σ(2) xy = Nec H cos θ , (27) and the density of charge carriers of this group N = (Smax + Smin)/2a(2π~)2 can be found from measuring SdH oscillations, whose period is determined by the extremal cross-sections of the cyli- nder Smax and Smin. If the number N of charge carriers whose states belong to the weakly corrugated cylinder is known, one can determine the contributions of both groups of conduction electrons in the absence of a magnetic field by solving the equations (21) with respect to σ0 and σ1. Therefore, having experimentally determined the constant of proportionality γ = Nec/ /σ0H cos θ in the expression (26) for the ratio of the Hall field and the electric field Ey, it is possible to determine the fraction of participation of electrons on the corrugated plane of FS in the Hall component of the conductivity tensor σxy. In the case of quasi-one-dimensional character of the energy spectrum of these electrons, the component of the conductivity tensor should be neglected. Thus, experimental study of magnetoresistance anisotropy and Hall effect at different orienta- tions of current and magnetic field relative to the layers enables us to determine the contribution of various charge carriers groups to the conductivity, as well as to find out the character of FS anisotropy in the plane of layers. 149 R.A.Hasan, M.V.Kartsovnik, V.G.Peschansky References 1. Lifshits I.M., Peschansky V.G., Zh. Eksp. Teor. Fiz., 1958, 35, 1251 (in Russian); Sov. Phys. JETP, 1959, 8, 857. 2. Lifshits I.M., Peschansky V.G., Zh. Eksp. Teor. Fiz., 1960, 38, 188 (in Rusian); Sov. Phys. JETP, 1960, 11, 137. 3. von Klizing K., Droda G., Pepper M., Phys. Rev. Lett., 1980, 45, 494. 4. Tsui D.C. , Stromer H.L., Gossard A., Phys. Rev. B, 1983, 28, 2274. 5. Lifshits I.M., Zh. Eksp. Teor. Fiz., 1957, 32, 1509 (in Russian); Sov. Phys. JETP, 1957, 5, 1227. 6. Peschansky V.G., Fiz. Nizk. Temp., 1997, 23, 47 (in Russian); Low Temp. Phys., 1997, 23, 35. 7. Peschansky V.G., Kartsovnik M.V., J. Low Temp. Phys., 1999, 117, 1717. 8. Rousseau R. et al., J. Phys. I (France), 1996, 6, 1527. 9. Kartsovnik M. V. et al., Synth. Metals, 1995, 70, 811. 10. Peschansky V.G., Hasan R.A., Savel’eva S.N., Fizika Metalov i Metalovidenie, 2002, 94, 14 (in Russian). 11. Kartsovnik M. V., Peschansky V.G., Fiz. Nizk. Temp., 2005, 31, 249 (in Russian); Low Temp. Phys., 2005, 31, 185. 12. Singelton J., Rep. Prog. Phys., 2000, 63, 1111–1207. 13. Kartsovnik M.V., Chem. 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