Modified optical OR and AND gates
This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. The...
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| Datum: | 2002 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121352 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation. |
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