The influence of Cr concentration on time resolution of GaAs detectors
Investigated in this work were the influence of Cr dopant concentration and technological conditions of doping on photoconductivity (PhC) kinetics, dependence of PhC signal magnitude on voltage applied as well as the dynamic range of a photodetector based on semi-insulating GaAs:Cr. PhC relaxation w...
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| Datum: | 2006 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121425 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of Cr concentration on time resolution of GaAs detectors / L.L. Fedorenko, L.F. Linnik, L.G. Linnik, M.M. Yusupov, E.A. Solovyov, E. Sirmulis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 92-94. — Бібліогр.: 6 назв. — англ. |
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