Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators
A 0.14 µm CMOS transistor with two levels of interconnection was designed and simulated to investigate its functionality and characteristics. ATHENA and ATLAS simulators were used to simulate the fabrication process and to validate the electrical characteristics, respectively. A scaling factor of 0....
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| Datum: | 2006 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121430 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators / Ibrahim Ahmad, Yeap Kim Ho, Burhanuddin Yeop Majlis // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 40-44. — Бібліогр.: 8 назв. — англ. |