Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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irk-123456789-1215262017-06-15T03:05:41Z Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements. 2016 Article Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.062 PACS 64.70.K-, 78.60.Lc, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/121526 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
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Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements. |
| format |
Article |
| author |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| spellingShingle |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_sort |
Vlaskina, S.I. |
| title |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_short |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_full |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_fullStr |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_full_unstemmed |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
| title_sort |
peculiarities of photoluminescence spectra behavior in sic crystals and films during phase transformations |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2016 |
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http://dspace.nbuv.gov.ua/handle/123456789/121526 |
| citation_txt |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-07-08T20:02:45Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 62-66.
doi: 10.15407/spqeo19.01.062
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
62
PACS 64.70.K-, 78.60.Lc, 81.30.-t
Peculiarities of photoluminescence spectra behavior
in SiC crystals and films during phase transformations
S.I. Vlaskina1,2, G.N. Mishinova3, V.I. Vlaskin4, V.E. Rodionov2, G.S. Svechnikov2
1Yeoju Institute of Technology (Yeoju University),
338, Sejong-ro, Yeoju-eup, Yeoju-gun, Gyeonggi-do, 469-705 Korea
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: businkaa@mail.ru
3Taras Shevchenko Kyiv National University,
64, Volodymyrs’ka str., 01033 Kyiv, Ukraine
4Sensartech, 2540 Lobelia Dr., Oxnard, 93036 California, USA
Abstract. Peculiarities of photoluminescence spectra behavior in SiC crystals and thin
films with in-grown defects during phase transformations have been studied. On the
deep-level(DL)-spectra, as an example, their characteristics and behavior were
investigated. It has been shown that all DL spectra have the same logic of construction
and demonstrate identical behavior of the thin structure elements.
Keywords: photoluminescence spectra, SiC crystals and thin films, phase
transformations, in-grown defects.
Manuscript received 22.10.15; revised version received 27.01.16; accepted for
publication 16.03.16; published online 08.04.16.
1. Introduction
Due to improvement in SiC crystal growth techniques
and experimental methods many semiconductor
material-related problems have been solved. However,
there are still a number of problems related with
polytypism and defects in wide-band gap semi-
conductors such as SiC. Different polytypes and defects
can already be found in grown crystals and films, but
they also can be formed during device processing steps,
for instance, annealing at high temperatures. A large
variety of defects exists in SiC because of the binary
compound nature and polytypism. Study of defects in
SiC is very complicated. One can find a lot of papers
related to these problems.
Optics of defects in SiC crystals and single
crystalline films 4H-SiC was described in [1-3]. Silicon
carbide nanostructures and Si-SiC core–shell nanowires
as well as SiC nanotubes of high crystalline quality were
described in [4]. The potential application of these nano-
objects with regards to their eventual integration in
biology and electronics is highly attractive.
Polytypism and one-dimensional disorder in silicon
carbide using synchrotron edge topography were studied
in [5]. The results of spectral studying the defects in very
pure SiC crystals and single crystalline films 4H-SiC
were described in [6]. The photoluminescence research
of the phase transition 6H–3C–SiC with and without
joint polytypes was presented in [7]. Low temperature
photoluminescence changes of the transition phase in
SiC crystals were represented with the stacking fault
spectra within the temperature range 4.2…35 K. The
stacking fault spectra that indicate metastable formation
of nanostructures in the SiC crystals (14H1〈4334〉,
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 62-66.
doi: 10.15407/spqeo19.01.062
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
63
10H2〈55〉, 14H2〈77〉) were studied in the work [8].
Defects in the lightly doped SiC crystal with grown
defects of structure were studied in [9-11].
The deep-level (DL) spectra manifested itself the
most clearly, emphatically and intensively in the case
when strong diffuse scattering effects are present in the
Laue diffraction pattern [11-14], after intercalation of the
multilayer polytypes and layers with the disorder
structure (single axis disorder), in SiC crystals and films
with the impurity concentration of ND – NA ∼
(2…8)·1016 cm–3, NА ∼ (2…7)·1017 сm–3.
A linear spectrum (with phonon part) at 4.2 K is
located on the wide band with the maximum in the
green-yellow region, which starts to dominate at 77 K
and remains up to the 160…170 K, when the DL
spectrum winks out [9, 11, 12, 14].
The appearance of the thin-linear structure in DL
spectra requires at least a certain minimum concentration
of impurities (ND – NA), as well as expressed (in
concentration and in behavior) deformations of the
crystalline structure (DL1).
An increase in the degree of deformations –
deviations from the determinate growth to the multilayer
and mosaic crystal types, appearance of several growth
centers leads to the complexity of the whole spectrum,
emergence of set of the DL spectra with the same
behavior in the corresponding registration conditions.
The DL spectra as well as the corresponding SF spectra
[8] are related with their crystalline matrixes and shifts
in the common energy scale.
It is convenient to demonstrate all general
characteristics of the DL spectra by using the example of
the most common DL1 spectrum. Observation of this
fine linear structure (Т = 4.2 K) allowed to determine the
exact boundaries of the zero-phonon part of the DL
spectrum and confirm the complex internal logic of the
composition of this zero-phonon part (DL-I(X) and DL-
II(Y)). Existence of the fine linear structure allowed to
track individual behavior of each element of this
structure vs. temperature.
However, although for the SF spectra many
parameters have been determined (thermal activation
energy of quench, peculiarities of the spectra at the
different intensity and polarization of excitation light,
intensity in quench vs. delay time [8]), there was a lack
of such information for the DL spectra.
In this paper, we intend to fill this gap and provide
more understanding the SiС defects.
2. Experimental
The method of optical spectroscopy – low-temperature
photoluminescence (LTPL) – was used in this work, as it
is very sensitive to structural changes. LTPL spectra
were registered by the ДФС-12 spectrograph with the
photodetector (ФЭУ-79). In photoluminescence (PL)
experiments, a nitrogen laser ЛГИ-21 (λ = 337 nm,
3.68 eV), or helium-cadmium laser ЛГ-70 (λ =
441.6 nm, 2.807 eV), respectively, were used. Also,
mercury ultrahigh pressure lamp СВДШ-1000 with
УФ-2 filter and xenon lamp ДКСШ-1000 were used. In
addition, MDR-2 spectrometer was applied in the case of
registering the excitation spectra of PL.
The selected samples of α-SiC crystals were
contained in a liquid helium or nitrogen cryostat, which
provided the temperatures ranging from 1.5 up to 330 K.
The crystals were irradiated, de-energized, then they
were taken out from liquid nitrogen and the intensity of
FL was measured at the temperature increase. The
change in the intensity of exciting light within about two
orders was achieved by graded weakening of the
exciting beam from a mercury lamp (СВДШ-1000).
The investigated monocrystalline a-SiC crystals,
grown using Lely’s (Tairov’s) method, were N1DL and
N9DL. The N1DL sample was characterized by additional
obligate nods in the reciprocal lattice, diffuse bridges
between reflexes and other degradation signs. The N9
sample is a “morphological freak”. All the above
mentioned peculiarities are enhanced by the appearance
of new reflexes, and amplification of diffuse (blurring)
effects. This type of crystals has clear spirals of growth
and steps of surface growth (Fig. 1).
Evolution of the thin-structure elements with
temperature for the sample DL1 (N1DL) up to the
temperature 77 K was described in ref. [11]. The thin
structure at several temperatures was described in detail:
– nature of intensity variation of individual/separate
elements of this thin structure with temperature,
– dependence of shift and half-width of elements of
thin structure on temperature.
At the temperature 30 K, the local phonon (LOC
91 meV) disappears, and the thin line structure elements
shift towards higher energy, and their broadening stops,
and from 60 K the fading of DL-I(X) and DL-II(Y) takes
place. The other interval of temperatures (higher than
60 K) is shown in Fig. 2. The full attenuation takes place
at higher temperatures.
The temperature dependences of PL suppression
for the DL-I(X) and DL-II(Y) components of zero
phonon part of a spectra DL1 (sample N1DL) and DL-
II(Y) of DL2 (sample N9DL) are shown. Curve 1 fades
more quickly, has smaller thermal activation energy
(0.21 eV) and corresponds to DL-I(X) zero phonon part.
Curves 2 and 3 have the same activation energy
(0.26 eV) and correspond to DL-II(Y) in different DLi
samples. Curves 1, 2, and 3 are plotted with the
background deduction, and curve 4 – without it.
Table. Band gap (optical Eg and exciton Egx, eV) in SiC.
Polytype Eg Egx Δ = Eg – Egx
6H 3.109 3.024 0.085
33R 3.087 3.002 0.085
21R 2.938 2.853 0.085
8H 2.868 2.783 0.085
10H2 2.798 2.713 0.085
14H2 2.698 2.613 0.085
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 62-66.
doi: 10.15407/spqeo19.01.062
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
64
Fig. 1. Laue diffraction pattern of one-dimensional disordered
D-layers in a-SiC for SiC crystal (N9 sample).
Fig. 2. Temperature dependences of PL suppression for the
DL-I(X) and DL-II(Y) components of zero phonon part in the
DL1 spectra (sample N1DL) and DL-II(Y) of DL2 (sample
N9DL). Curves 1, 2, 3 are for zero phonon parts without
background, 4 – with background. 1 – excited with 2.696 eV,
for DL-I(X), 2 – excited with 2.66 eV, for DL-II(Y), 3 –
excited with 2.5 eV, for DL-II(Y), 4 – excited with 2.5 eV,
with background.
Thus, the X-component fades at temperature ~105 K
with thermal activation energy of Ext = 0.21±0.01 eV.
When the temperature reaches 120…125 K, the Y-com-
ponent fades with Eyt = 0.26±0.01 eV. And the course of
this attenuation allows to assume the pumping of Y-
components intensity in this temperature interval
corresponding to the sharp attenuation and disappearance
of X-component in the DL spectra.
At the temperature 30 K, local phonon (LOC
91 meV) disappears, and the thin line structure elements
shift towards higher energy, and their broadening stops,
and from 60 K the fading of DL-I(X) up to 105 K and
DL-II(Y) to 125 K takes place. The obtained thermal
activation energy probably determines the depth of the
ground level in the corresponding electron transition.
Therefore, the most explored and most clearly
exhibited in N1DL and N9DL samples DL1 spectrum with
the base motive of building structure 〈34〉 (21R-SiC) has
two components:
DL-I(X) = 2.73…2.67 eV;
DL-II(Y) = 2.685…2.625 eV.
The DL-I(X) component exists within the
temperature range 4.2…105 K and DL-II(Y) component
– within 4.2…125 K. The background is visible up to
160…170 K.
At the temperatures higher than 60 K, the fading
occurs as the whole without the shift in the energy scale
Eay = 0.26±0.01 eV. The difference between the activation
energies Δ(Еа(Y) – Еа(Х)) = (45…50) meV, which is in
full agreement with the amount of Δ1 – Δ2 = 0.043 eV,
which estimates the energy difference between the levels
associated with the ground states X and Y obtained from
the PL spectra [11]. This shift between two parts of the
DL spectra was accurately determined from the low-
temperature photoluminescence spectra [11]. All these
changes of intensity X- and Y-components match the
features of thermal luminescence of this sample at the
low-temperatures 80…130 K.
The spectra of thermostimulated luminescence are
shown in Fig. 3.
The crystal was irradiated, de-energized, then it
was taken out from liquid nitrogen and, with an increase
in temperature, it is shown that the maximum of PL
intensity corresponds to the temperature where curves
1-3 in Fig. 2 fade.
Fig. 3 shows the temperature dependence of the
quenching components DL1: DL-I(X) and DL-II (Y)
(zero phonon spectrum of the DL1 (sample N1DL). A
thermally stimulated luminescence spectrum is shown
for DL2 spectrum, too (sample N9DL).
Determination of the thermal activation energy was
made from the temperature fading of photoluminescence
for two groups (DL-I(X) and DL-II(Y)) of zero phonon
parts in spectra DL1 (sample N1DL) and for DL-II(Y)
spectra DL2 (sample N9DL).
The DL spectra of these samples are shown in [11].
It is worth mentioning that the temperature behavior of
Y-component of more longwave spectra of DL3 gives
the same value of the thermal activation energy Eyt =
0.26±0.01 eV.
Fig. 3. Thermostimulated luminescence spectra (sample N1DL).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 62-66.
doi: 10.15407/spqeo19.01.062
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
65
In general, the identical temperature behavior of
spectra DL1, DL2, and DL3 etc. testifies to the structural
uniformity of the centers responsible for DL luminescence.
It is clear that behavior of the DLi series is absolutely
different from behavior of SFi series [8]. The change of
intensity of exciting light within about two orders, reached
by gradual weakening of the exciting beam from the
mercury lamp СВДШ-1000, reveals a sublinear
dependence of the intensity of the DL luminescence, which
is k
exL II ~ , where k = 0.7…0.9 (Fig. 4).
However, for the most short-wave structural
components of the zero phonon part of the DL spectra at
a small intensity of excitation (when the intensity falls
dramatically), the character of the dependence comes
nearer to the linear one (Fig. 4). Fig. 4 shows the
dependence of the intensity of different elements in the
spectrum DL1 fine structure, on the excitation intensity
(at T =77 K (sample N2DL)). For the short-wave region,
the fine structure differential intensity for the variation
of DL-I(X) and DL-II(Y) spectra equals to 0.7…0.9.
The energy change of the quantum of exciting light
was determined by the spectra of photoluminescence.
Similar spectra were observed during the reverse phase
transformation [7]. The quenching of the DL1 spectra
(phosphorescence) at different time delays (T = 77 K) is
depicted in Fig. 5.
The attenuation of DL luminescence in a wide time
range t = 10–7…10–3 s is shown in Fig. 6. The change of
radiation intensity corresponds to the regularity of
α−= tII 0 .
It is possible to allocate three stages:
(0…0.5) μs – fast fluorescence attenuation with
dropping the luminescence intensity approximately by
1.5-2 orders.
(0.5…150) μs – this is a stage of phosphorescence
characterized by the index number 0.4.
Further (0.15…15 ms) there is faster attenuation
related to the elements of structure of zero phonon parts
of DL spectra.
Fig. 4. Dependence of intensity of DL luminescence vs.
intensity of exciting light (T = 77 K).
Fig. 5. DL1 spectra at fading with various temporal delays
(phosphorescence) (Sample N2DL). T = 77 K.
Measurements of spectra with temporal delays (t)
in the millisecond range show a higher attenuation speed
of DL-X as compared to DL-Y, as well as stronger
attenuation of the short-wave elements of the structure in
each group (Fig. 6). Here, the index number α changes
within 0.65…1.0 (Fig. 6 on the right).
At the temperature of 4.2 K and the delays
0.1 μs…10 ms, the index numbers are α1 = 1.5 (fast
attenuation) and α2 = 0.4. At the delays of 3…10 ms, the
differential change of the fine structure elements α =
0.7…0.9 and short-wave elements in each group of DL-I
and DL-II decays faster. This behavior is very similar to
that of the photoluminescence vs. the intensity of
excitation light.
Here, as in the case of the SF centers [8], one can
assume a significant radiative lifetime, which is due to
the spatially separated recombining electrons and holes
with slightly overlapping wavefunctions.
Fig. 6. The law of changes in the intensity of PL in DL1 spectra
at different delays in a wide time interval. At 4.2 K sample N1DL
(on the left) and at 77 K sample N2 DL (on the right).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 62-66.
doi: 10.15407/spqeo19.01.062
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
66
In the case of intensity of the DL spectrum vs.
polarization of exciting light measurements, the
selective changes in the intensity of the fine structure
inside each group of DL-I and DL-II were observed.
The changes are in reverse for Eex parallel and
perpendicular to the c-axis.
It is clear that all the samples DLi show the
identical behavior of the thin structure DL-X and DL-Y
irrespective of belonging to the DL1, DL2 type, etc., such
as temperature broadening and a shift in the short-wave
area, the differentiated character of attenuation. The
broadening of elements and as a whole blurs out the thin
structure of DL-X and DL-Y spectra, which is observed
with the increase in ND – NA from 2.6·1016 cm–3 to
(5…7)·1017 cm–3 (even at T = 4.2 K (sample N9DL)).
The temperature (4.2…77 K) shift of lines as a
whole is estimated as 7 meV in comparison with the
shift of the certain line in the thin structure which equals
~3 meV in the samples with ND – NA ~ (2…3)·1016 cm–3.
3. Conclusion
All DL-i spectra have identical construction, namely:
every zero phonon part has two structural groups X and
Y (DL-X and DL-Y) and their phonon repetitions (as a
whole) with the participation of LA and LO phonons and
a local phonon (4.2 K).
Behavior of each DLi spectra is identical under
various conditions of registration. The intensity of each
element of fine structure (X and Y) changes with
temperature (4.2…77 K). The intensity passes through
a maximum. The intensity of X and Y components
fade. The DL-X fades to ~105 K with the thermal
energy of activation equal to 0.21 eV. The DL-Y fades
to ~125 K with the thermal energy of activation equal
to 0.26 eV.
There is the sublinear law in attenuation within the
wide time interval t = 10–6…10–3 s. Speeds of
attenuation for the elements of the thin structure at final
stages are different. The speeds of attenuation depend on
the intensity of the exciting light (sublinear dependence)
and are different for the elements of the thin structure.
DLi spectra are the same as SFi, which reflects
fundamental SiC polytype transformations. But DLi and
SFi spectra have different nature and characters, even
when they follow the nanostructure transformations
together.
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