The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-volt...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2016
Автори: Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121535
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 116-123. — Бібліогр.: 9 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121535
record_format dspace
fulltext
spelling irk-123456789-1215352017-06-15T03:05:45Z The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures Ievtukh, V.A. Ulyanov, V.V. Nazarov, A.N. In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined. 2016 Article The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 116-123. — Бібліогр.: 9 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.116 PACS 73.50.Gr, 84.32.Tt, 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/121535 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined.
format Article
author Ievtukh, V.A.
Ulyanov, V.V.
Nazarov, A.N.
spellingShingle Ievtukh, V.A.
Ulyanov, V.V.
Nazarov, A.N.
The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Ievtukh, V.A.
Ulyanov, V.V.
Nazarov, A.N.
author_sort Ievtukh, V.A.
title The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
title_short The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
title_full The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
title_fullStr The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
title_full_unstemmed The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
title_sort charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2016
url http://dspace.nbuv.gov.ua/handle/123456789/121535
citation_txt The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 116-123. — Бібліогр.: 9 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT ievtukhva thechargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures
AT ulyanovvv thechargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures
AT nazarovan thechargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures
AT ievtukhva chargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures
AT ulyanovvv chargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures
AT nazarovan chargetrappingemissionprocessesinsiliconnanocrystallinenonvolatilememoryassistedbyelectricfieldandelevatedtemperatures
first_indexed 2025-07-08T20:04:35Z
last_indexed 2025-07-08T20:04:35Z
_version_ 1837110474099916800

Схожі ресурси