Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice
The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation and the new analytic wave function of superlattice. The binding energy is...
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| Date: | 2005 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121547 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 18-21. — Бібліогр.: 31 назв. — англ. |