Interband optical transitions in spherical nanoheterostructures

A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework of the Luttinger-Baldereschi-Lipari Hamiltonian and the finite value of the ba...

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Datum:2005
Hauptverfasser: Boichuk, V.I., Bilynskyi, I.V., Shakleina, I.O.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/121549
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Interband optical transitions in spherical nanoheterostructures / V.I. Boichuk, I.V. Bilynskyi, I.O. Shakleina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 26-32. — Бібліогр.: 13 назв. — англ.

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spelling irk-123456789-1215492017-06-15T03:03:00Z Interband optical transitions in spherical nanoheterostructures Boichuk, V.I. Bilynskyi, I.V. Shakleina, I.O. A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework of the Luttinger-Baldereschi-Lipari Hamiltonian and the finite value of the band disruption on the boundaries of the media is ascertained. Specific calculations of the quantum dot radius dependence of the hole state energy were performed for the GaSb/AlSb heterostructure. The obtained results were compared to the data obtained using the infinite potential well model as well as the model of simple bands for heavy and light holes. The electron energies and electron wavefunctions were found within the isotropic effective mass model taking into account a discontinuity of the conduction bandgap on the heterostructure boundary. Probabilities of GaSb/AlSb heterosystem interband transitions were analyzed using the obtained formulae. 2005 Article Interband optical transitions in spherical nanoheterostructures / V.I. Boichuk, I.V. Bilynskyi, I.O. Shakleina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 26-32. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 73.21.-b, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/121549 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework of the Luttinger-Baldereschi-Lipari Hamiltonian and the finite value of the band disruption on the boundaries of the media is ascertained. Specific calculations of the quantum dot radius dependence of the hole state energy were performed for the GaSb/AlSb heterostructure. The obtained results were compared to the data obtained using the infinite potential well model as well as the model of simple bands for heavy and light holes. The electron energies and electron wavefunctions were found within the isotropic effective mass model taking into account a discontinuity of the conduction bandgap on the heterostructure boundary. Probabilities of GaSb/AlSb heterosystem interband transitions were analyzed using the obtained formulae.
format Article
author Boichuk, V.I.
Bilynskyi, I.V.
Shakleina, I.O.
spellingShingle Boichuk, V.I.
Bilynskyi, I.V.
Shakleina, I.O.
Interband optical transitions in spherical nanoheterostructures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Boichuk, V.I.
Bilynskyi, I.V.
Shakleina, I.O.
author_sort Boichuk, V.I.
title Interband optical transitions in spherical nanoheterostructures
title_short Interband optical transitions in spherical nanoheterostructures
title_full Interband optical transitions in spherical nanoheterostructures
title_fullStr Interband optical transitions in spherical nanoheterostructures
title_full_unstemmed Interband optical transitions in spherical nanoheterostructures
title_sort interband optical transitions in spherical nanoheterostructures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/121549
citation_txt Interband optical transitions in spherical nanoheterostructures / V.I. Boichuk, I.V. Bilynskyi, I.O. Shakleina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 26-32. — Бібліогр.: 13 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-07-08T20:05:48Z
last_indexed 2025-07-08T20:05:48Z
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