APA (7th ed.) Citation

Arsentyev, I., Bobyl, A., Tarasov, I., Shishkov, M., Boltovets, N., Ivanov, V., . . . Milenin, V. (2005). New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis. Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України.

Chicago Style (17th ed.) Citation

Arsentyev, I.N, et al. New Technological Possibilities to Prepare InP Epitaxial Layers, as Well as Ohmic and Barrier Contacts to Them, and the Properties of Microwave Diodes Made on Their Basis. Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України, 2005.

MLA (8th ed.) Citation

Arsentyev, I.N, et al. New Technological Possibilities to Prepare InP Epitaxial Layers, as Well as Ohmic and Barrier Contacts to Them, and the Properties of Microwave Diodes Made on Their Basis. Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України, 2005.