Optical properties of p-type porous GaAs
Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The low-frequency Raman shift of the peaks conditioned by the main opti...
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| Datum: | 2005 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121575 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optical properties of p-type porous GaAs / V.V. Kidalov, L. Beji, G.A. Sukach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 118-120. — Бібліогр.: 13 назв. — англ. |