Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. C...
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| Datum: | 2006 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121579 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. Calculated are the minimal growth rate 22 nm/s that is necessary for prevention of distortion appearance of epitaxial layer surface caused by elastic strains and the critical thicknesses of misfit dislocation formation – 50 and 54 nm for the [100] and [111] growth directions, respectively. It is shown experimentally that the lack of minimal supercooling leads to the island growth mode. |
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