Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials
In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transfor...
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| Datum: | 2006 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121595 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ. |