Dynamic electrophysical characterization of porous silicon humidity sensing

The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of...

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Datum:2006
Hauptverfasser: Bravina, S., Morozovsky, N., Boukroub, R.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/121597
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ.

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