Active inductances controlled in GaAs MESFET technology
Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the val...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Цитувати: | Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1216172017-06-16T03:04:00Z Active inductances controlled in GaAs MESFET technology Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature. 2006 Article Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 84.37.+q, 85.30. Tv http://dspace.nbuv.gov.ua/handle/123456789/121617 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature. |
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Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
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Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. Active inductances controlled in GaAs MESFET technology Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
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Benbouza, M.S. |
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Active inductances controlled in GaAs MESFET technology |
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Active inductances controlled in GaAs MESFET technology |
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Active inductances controlled in GaAs MESFET technology |
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Active inductances controlled in GaAs MESFET technology |
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Active inductances controlled in GaAs MESFET technology |
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active inductances controlled in gaas mesfet technology |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2006 |
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http://dspace.nbuv.gov.ua/handle/123456789/121617 |
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Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT benbouzams activeinductancescontrolledingaasmesfettechnology AT kenzaiazizic activeinductancescontrolledingaasmesfettechnology AT merabtinen activeinductancescontrolledingaasmesfettechnology AT saidiy activeinductancescontrolledingaasmesfettechnology AT amouraches activeinductancescontrolledingaasmesfettechnology |
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2025-07-08T20:13:51Z |
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1837111057029529600 |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 44-48.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
44
PACS 84.37.+q, 85.30. Tv
Active inductances controlled in GaAs MESFET technology
M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache
Physical laboratory of the Thin Layers and Interfaces, University of Constantine, Algeria
Electromagnetism and telecommunication laboratory, Electronics department, University of Constantine
E-mail: na_merabtine@hotmail.com; Benb5506@yahoo.fr; aziziche@yahoo.fr
Abstract. Two new structures of active inductance which implement MESFET
transistors are proposed in this article. The technological parameters of the components
of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of
these new structures such as the adjustable character of the value of the active inductance
like their limitation, and we compare them to those of the literature.
Keywords: active inductance, GaAs MESFET, quality factor, silicon bipolar technology,
RF applications.
Manuscript received 24.02.06; accepted for publication 23.10.06.
1. Introduction
The studies of RF inductances are justified by the keen
demand of the applications in telecommunication such
as filtering in continuous time, the controlled oscillators
and decoupling. These basic elements of analog
electronics are certainly essential.
Integrated passive inductances are limited by their
low quality coefficient [1], the reproducibility of their
values and the large area of silicon surface necessary for
their synthesis for the RF applications, frequency of
which is a few gigahertz. It is moreover to note that this
problem of size involves an additional difficulty of
characterization of the couplings existing between the
various tracks that constitute the inductance. Some
techniques were introduced to palliate or to lessen the
impact of these defects [2, 3]. These improvements were
obtained with the detriment of the facility of design and
require a high number of used metal layers, as well as
lead to the inductance modelling.
The wire bonding was also explored in order to
synthesize a passive inductance [4]. However, this
option does not present a strong integration and poses
also the problem of the reproducibility of the inductance
value. Thus it remains held for certain applications.
For a few years, another approach is known as a
renewal of attention on behalf of the analogious
originators: the “active inductance”. This revival is
mainly due to better performances of the transistors,
which result from the technological improvements of the
integrated circuit manufacturing processes. In addition to
the adjustable aspect of the active inductance, we can
note the possibility of obtaining the good quality factors
(Q > 5), a broader frequency range, as well as the
independence between the inductance value and the
circuit size.
As we will point out, achievements were presented
in GaAs technology for the high frequencies; others
were presented in silicon bipolar technology for RF
applications in the gigahertz frequency band around. We
propose two new GaAs MESFET structures and
compare their characteristics to those of other MESFET
and bipolar structures from the literature.
2. Active inductances in GaAs technology
The first active inductances elaborated in the gigahertz
frequency range were in GaAs technology. Fig. 1
represents the basic topology presented by Hara and its
characteristics according to the frequency [5]. This
configuration implements MESFET transistors. It has an
inductance of the order of 13 nH and a series resistance
about hundred ohms at 1 GHz frequency. The
approximated expressions of the coil and synthesized
series resistance are given by:
m
gs
g
RC
L ext≈ and
mg
R 1
≈ , (2.1)
where Cgs is the gate-source capacity of the MESFET
component, mg is its transconductance, and Rext is the
negative feedback resistance connected between the
drain of the input transistor and the gate of the second
transistor. The transistors are supposed to be identical.
The surface area occupies 400×500 µm. Then impro-
vements were made to this structure in order to reduce
the value of series resistance. Fig. 2 represents an
evolution of the circuit of Fig. 1, transistors in feedback
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 44-48.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
45
00 1100
25
20
15
10
5
0
8
6
4
2
0
L
R
F/MHz
Fig. 1. Basic topology of the active inductance [5].
Common Gate Cascade FET
Vc
Zin
Common Source Cascade FET
Fig. 2. The circuit “Cascade FET feedback active inductor”.
are called “Cascade FET feedback active inductor” [6].
Using a control voltage Vc, an inductance is adjustable
from 2 to 3 nH. This structure has a 8 Ohm series resis-
tance and the quality coefficient 5 at 1 GHz frequency.
Finally, we present the Zhang configuration [7] that
is made up of three transistors of the MESFET type
(Fig. 3).
In a similar way, via the control voltage provided by
the polarization, the value L of the inductance can vary
around 7 nH and the series resistance R around 5 Ohm at
1 GHz frequency. The values of L and R are given by:
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
+≈
2
3 2
12
Tmm
gs
f
f
gg
C
L
and
1
3 /
11
−
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−≈
T
m ff
gR (2.2)
where Tf is the transition frequency of the transistors,
gm is the transconductance of the transistor 1 or 2 and
gm3 is the transconductance of the transistor 3. The
maximum used frequency reaches approximately 8 GHz.
3. Active inductances in silicon bipolar technology
3.1. Generalities
The surface occupied by the integrated circuits in bipolar
technology is important because of many passive
elements (inductance, capacity and resistance) and active
of polarization.
The various studies undertaken on the active induc-
tances conceived starting from transistors of the bipolar
type showed that their quality coefficient is proportional
to the transistor parameters according to the formula:
outg
g
Q m= , (3.1)
where outg is the output conductance of the transistor
and mg is its transconductance.
Thus the bipolar transistor presents interesting
possibilities for the synthesis of active inductances
taking into account its strong transconductance
compared to that of MESFETs. Moreover, in the
frequency range near gigahertz, the inductance values
used are more important than those met at the higher
frequencies. Then the output transconductance of the
bipolar transistor contributes to the necessary increase
in the inductance value.
Moreover, other advantages result from it:
• The advantage over the transconductance will lead
to a less power consumption.
• The size of the bipolar transistors being lower, the
saving in space compared to the GaAs
configurations is interesting.
Q1 Q2
Q3
Fig. 3. Circuit of the active inductance presented by Zhang [7].
L
, n
H
R
in
, Ω
800
600
400
200
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 44-48.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
46
Fig. 4. Electric diagram of the active inductance [8].
5.00
3.75
2.50
1.25
0.00
100 200 1000
Freq(MHz) LOG
Lin
Rin
Fig. 5. AC Simulation of the active inductance and the asso-
ciated series resistance.
• Silicon BiCMOS technology used to carry out
active inductance opens the possibility of integration
of analog and digital functions. Their various circuits
that we will consider in bipolar technology are those
of an inductance connected to the ground.
3.2. R. Kaunisto model
In the circuit presented by R. Kaunisto [8], used was a
configuration with two n-p-n transistors given in Fig. 4.
Using the HF2CMOS technology parameters,
during the AC simulations of this structure revealed was
an average inductance of about 3.5 nH and a resistance
of approximately 1 Ohm with a notable reduction in the
value of the series resistance from 850 MHz (Fig. 5).
Then the best quality factor is obtained at the
frequency for which the series resistance is minimal, Q is
equal 20 at a 1 GHz frequency.
4. Proposed models
In this part of the study, we propose two MESFET based
models to determine active inductances.
4.1. The first suggested inductance
The first structure that we propose comprises two n-type
MESFET transistors, transition frequency of which is of the
order of 9 GHz under the used polarization conditions. Its
small signal equivalent electric diagram is shown in Fig. 6.
The AC simulations (Figs 7-9) of this configuration
results in 1 GHz with an adjustable inductance of about
7 nH and a resistance series of about 2 Ohm. The
obtained inductance is proportional to the MESFET
parameters.
This dependence clarifies the adjustable character of
the inductance by the means of the polarization current.
Indeed, the intrinsic parameters of the model such as Cgs,
Cds, Cdg, and gm depend on the transistors polarization
current [9].
Compared to the performances of the circuit in Fig. 6,
this structure must be modified in order to reduce the ohmic
loss and increase the quality factor.
4.2. The second suggested inductance
The second suggested structure is shown in Fig. 10 to
reduce the series resistance. This circuit adopts a
configuration with three n-type MESFET transistors (fT ~
9 GHz). The simulations (Figs 11-13) show that this circuit
satisfies our criteria: the value of the variable inductance
obtained is about 12.5 nH and the series resistance remains
lower than 1.3 Ohm at 1 GHz frequency.
Fig. 6. Electric diagram of the first suggested active
inductance.
Fig. 7. AC simulation of the series resistance associated with
the inductance.
10.6
1.50
2.50
0.00
R
in
, Ω
L
in
, (
nn
H
)
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 44-48.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
47
Fig. 8. Frequency variation of the inductance.
Quality factor
Fig. 9. Frequency variation of the value of the inductance
quality coefficient.
4.3. Conclusion and comparison between these two
configurations
It should be noted for the configurations of Figs 6 and 10
that the polarization conditions were determined to obtain a
good quality factor. These polarization conditions can also
be sources of instabilities, which result from the influence
of polarization on the series resistance of the inductance;
however, the series resistance can indeed become negative
under certain conditions.
Table. Comparison of the various presented configurations.
Parameter Circuit
Fig. 2 Fig. 3 Fig. 4 Fig. 6 Fig. 10
L (nH) 2 6 3.5 7 12.5
R (Ohm) 8 5 1 2 1.3
Q 5 − 20 5 8
Consumption
(mW)
− − − 10 20
Table illustrates well the evolution of the inductance L
and the resistance R among the topologies of Figs 2, 3, 4, 6,
and 10 from a value and power consumption point of view.
The circuit of Fig. 10 is that shows the best charac-
teristics. Moreover, it proposes a value of the inductance
higher than the circuit of the Fig. 6 configuration for a
less power consumption. This inductance value and that
of the associated series resistance are adapted to the RF
applications of the filtering type and oscillators at 1 GHz
frequency.
Fig. 10. Electric diagram of the second suggested active
inductance.
Fig. 11. AC simulation of the circuit inductance.
Fig. 12. AC simulation of the series resistance associated with
the inductance.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 44-48.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
48
Quality factor
Fig. 13. Frequency variation of the quality coefficient value.
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