Conductivity and photoconductivity peculiarities observed in C₆₀ layers
Thin layers of various thickness prepared from C60 with traces of C70 were studied. They were deposited by thermal evaporation on quartz, glass, p-Si or n-Si substrates. An apparatus fixing current values every 3 ms was used to measure and register the kinetics of layer conductivity and photoconduct...
Gespeichert in:
| Datum: | 2006 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121627 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Conductivity and photoconductivity peculiarities observed in C₆₀ layers / St. Kanev, Z. Nenova, N. Koprinarov, K. Ivanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 17-20. — Бібліогр.: 16 назв. — англ. |