Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication
Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasoun...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Цитувати: | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. |
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irk-123456789-1216302017-06-16T03:03:56Z Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed. 2006 Article Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 43.35.+d, 73.61.Ga, 73.50.Jt http://dspace.nbuv.gov.ua/handle/123456789/121630 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed. |
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Article |
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Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. |
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Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. |
| author_sort |
Savkina, R.K. |
| title |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_short |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_full |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_fullStr |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_full_unstemmed |
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_sort |
layer structure formation in hg₁₋xcdxte films after high-frequency sonication |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2006 |
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http://dspace.nbuv.gov.ua/handle/123456789/121630 |
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Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT savkinark layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication AT sizovff layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication AT smirnovab layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication AT tetyorkinvv layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication |
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2025-07-08T20:15:02Z |
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2025-07-08T20:15:02Z |
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1837111131844378624 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 4. P. 31-35.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
31
PACS 43.35.+d, 73.61.Ga, 73.50.Jt
Layered structure formation in Hg1−xCdxTe films
after high-frequency sonication
R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone:(044) 525-1813, fax: (044) 525 1810
r_savkina@rambler.ru; sizov@isp.kiev.ua; alex_tenet@isp.kiev.ua
Abstract. Electrophysical parameters of Hg1−xCdxTe thin films grown by liquid-phase
epitaxy and molecular-beam epitaxy were investigated before and after the high-
frequency sonication ( fUS = 7.5 MHz, WUS ∼ 104 W/m2). It was determined that
parameters of MBE-grown Hg1−xCdxTe thin films are stable to ultrasound effect, while
for thin films grown by LPE the sonically stimulated change of the conductivity type was
observed. The best agreement between experiment and calculation was obtained in the
frame of the assumption about forming of the thin layer with another conductivity type.
The possible nature of the observed effect was analyzed.
Keywords: Hg1−xCdxTe thin films, sonication.
Manuscript received 19.10.06; accepted for publication 23.10.06.
1. Introduction
Solid solutions Hg1−xCdxTe (MCT) have important
technological application for infrared devices despite
numerous attempts to replace it with alternative
materials. This follows both from fundamental
considerations and the material flexibility. At present
efforts in infrared detector research are directed towards
improving the performance of single element devices,
large electronically scanned arrays and higher operating
temperature [1-3]. At the same time, stability of elec-
trical parameters of MCT epitaxial layers under the
external actions is an important factor of reliability of
the infrared FPA detector.
It is known that MCT is very soft and brittle
material; defects can be easily introduced during
preparation processes as well as by handling. The quality
of MCT based devices can be dramatically changed as a
result of the degradation process connected with an
action of external factors (deformation, temperature,
irradiation), which give rise to active transformation of
the defect system in this material.
We suppose that the high-frequency ultrasound
(US) is a good tool for driving the material into the non-
equilibrium state and transformation of the defect
system. Acoustic-wave treatment, to some extent,
simulates the processes of degradation, producing the
condition to study the stability of the layer parameters in
a relatively short time interval. In this work, we have
investigated the electrophysical parameters of MCT thin
films before and after sonication to determine changes of
the carrier transport stimulated by the high-frequency
and high-intensity deformation.
2. Experiment
MCT thin films (x∼0.2) for 8…12 μm spectral region
FPAs were grown by liquid-phase epitaxy (LPE) and
molecular-beam epitaxy (MBE) methods. MBE-grown
MCT epitaxial layers were grown on the 2-inch-diameter
(013) GaAs substrates with an intermediate CdZnTe
buffer layer. The as-grown layers were of n-type
conductivity, and p-type MCT layers were obtained by
annealing at 200–300 °C. Semi-insulating CdZnTe
plates were used as a substrate for LPE-grown p-type
MCT layers. The thickness of grown layers was about
10…20 μm.
The sonication of MCT thin film samples was
carried out with the aid of the LiNbO3 piezo-transducer
at the frequency fUS = 7.5MHz. Longitudinal vibrations
with the intensity WUS ∼ 104 W/m2 were excited. The
treatment time amounted to 30 min at room temperature.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 4. P. 31-35.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
32
The concentration and mobility of free carriers in
MCT layers were determined from the Hall coefficient
RH and conductivity σ measurements which were made
by van der Pauw method at T = 78 K and magnetic field
B = 0…0.7 T. Samples 1×1 cm in size were cut from
wafers for measurements. The high resistivity of the
substrates excluded any influence on the results of
electrical measurements. A standard procedure of the
photoconductivity spectroscopy was also used before
and after the sonication.
3. Results
The change of the measurable parameters after
sonication was observed for all the samples. Figs 1 and 2
show typical field dependences of the Hall coefficient
for investigated MCT films. Points in figures represent
the experimental Hall effect data, and solid lines are the
results of the fitting procedure. The Hall effect data were
processed in terms of the model including several kinds
of carriers using the following expression [4]:
( ) ( )222H
)()(
)(
)(
∑∑
∑
+
=
BcaBBc
Bca
BeR
iiii
iii
μ
μ
, (1)
where e is the electric charge, ci = niμi /(1+μi
2B2), ni is
the concentration of the i-th type of carrier, μi is the
mobility of the i-th type of carrier, ai is the sign of
carrier (−1 for electrons, +1 for holes), and B is the
magnetic induction. In addition, the zero magnetic field
electrical conductivity is given by Σ(0) = eΣci(0). The
electron and hole concentration and mobility were
obtained before and after US treatment.
In MBE-grown p-type MCT layers, the initial
values of the Hall coefficient RH and conductivity σ are
independent of the magnetic field induction B. This
indicates that only carriers of a single kind are present.
After sonication, a moderate increase of the hole
concentration and the mobility decrease were observed
(see the Table 1, sample 1).
In MBE-grown n-type MCT layers, the initial value
of the Hall coefficient RH is dependent on the magnetic
field B (see Fig. 1). Attempts to describe the experimental
data, using one carrier type (electron) or combined
electron and hole conductivities and also taking into
account the light hole contribution, were equally
unsuccessful. The Hall effect data were satisfactorily
explained by using two types of electrons of significantly
different mobility and concentration as well as
considering the field dependence of the conductivity σ(B).
Moreover, the best agreement between experimental and
calculated RH(B) dependences is obtained if suppose an
existence of the layer with heavy electrons. The calculated
values of the layer characteristic dimension dlayer and
charge carrier parameters for one of samples are shown in
Table 1 (sample 2). After sonication, a tendency to the
electron concentration increase and the mobility decrease
is observed.
Fig. 1. Magnetic field dependences of the Hall coefficient for
the typical MBE-grown n-type Hg1-xCdxTe layer. Curve 1 –
initial data; curves 2, 3 – after second sonication and in two
years storage, respectively.
The initial field dependence of the Hall coefficient
of the typical LPE-grown p-type MCT layer is shown in
Fig. 2 (curve 1). Concentration and mobility of majority
carriers for this sample are presented in Table 2. After
sonication, the change of the conductivity type p→n at
low magnetic field took place (see Fig. 2, curve 2).
Fitting procedure to the experimental data was applied in
this case, too. The best agreement between the expe-
rimental and calculated RH(B) dependences was obtained
within the framework of the assumption about ultra-
sonically stimulated formation of the layer with n-type
conductivity. The layer characteristic dimension dlayer
and charge carrier parameters were determined (see
Table 2).
4. Discussion
Thus, we demonstrated that the action of the acoustic
wave excited in MCT epilayers by piezo-transducer
results in a change of the carrier concentration up to the
change of the conduction type.
4.1. Stability of parameters describing MCT thin films
Experimental data from Tables clearly show that
parameters of MCT thin films grown by MBE are more
stable to sonication than those of films grown by LPE.
For MBE samples, a noticeable change of the charge
carrier mobility and concentration took place after the
second US treatment only. It should be also noted the
radiation hardness both MBE-grown MCT films [5] and
photodiodes prepared by using similar MCT films [6].
0.01 0.1 1
10-2
10-1
RH,
m3C-1
B,T
1
2
3
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 4. P. 31-35.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
33
Table 1. Some parameters of typical investigated Hg1-xCdxTe epilayers grown by MBE, T = 78 K. Parameters nd and μd are the
concentration and mobility of “heavy” electrons.
Sample p, n,
cm−3
μp, μn,
cm2/V⋅s
nd,
cm−3
μd,
cm2/V⋅s
d layer,
μm
ρ,
Ohm⋅cm
1.
x=0.22
d=12 μm
8⋅1015
9⋅1015
16⋅1015
373
360
247
−
−
−
−
−
−
−
−
2.1
1.9
1.56
Initial
1st sonication
2nd sonication
2.
x=0.21
d=14 μm
2.3⋅1013
2.3⋅1013
2.5⋅1013
84500
84500
70000
1.8⋅1015
1.8⋅1015
2.1⋅1015
8000
8000
5800
1.5
1.5
2.8
1.87
1.85
1.6
Initial
1st sonication
2nd sonication
Table 2. Some parameters of typical investigated Hg1-xCdxTe epilayers grown by LPE, T=78 K. Parameters nd and μnd are the
same as in Table 1.
Sample,
x=0.2
d=19μm
P,
cm-3
μp,
cm2/V⋅s
n,
cm-3
μn,
cm2/V⋅s
nd,
cm-3
μnd,
cm2/V⋅s
d1ayer,
μm
ρ,
Ohm⋅cm
Initial
1st sonication
2nd sonication
1.2⋅1016
1.1⋅1016
3.5⋅1016
511
320
222
3⋅1011
3.3⋅1011
1011
85000
120000
140000
−
2⋅1014
3⋅1015
−
1000
1000
−
2.28
4.8
0.89
1.6
0.54
Fig. 2. Magnetic field dependences of the Hall coefficient for
the typical LPE-grown p-type Hg1-xCdxTe layer. Curve 1 –
initial data; curves 2, 3 –after first and second sonication,
respectively.
Inset. Normalized curves of the photocurrent spectral response
of Cd1-xZnxTe substrate before (1) and after (2) sonication,
T = 78 K.
First of all, it could be connected with growth
features. Among the various epitaxial techniques, LPE
and MBE are the most often used methods, enabling
growth of device-quality homogeneous layers and
multilayered structures [1]. But MBE growth is carried
out at lowest temperatures (160…200 °C) as compared
with 450 °C for LPE. Remaining problems of LPE are
frequent occurrences of a terraced surface morphology,
sharpness of the interface region and a relatively high
density of misfit and threading dislocations. The
reduction of the growth temperature precludes impurity
diffusion from the substrate into MCT films resulting in
reduction of the background doping down to 1–1.5 order
at the same purity of material for MBE synthesis [7].
The degree of the structural perfection of MCT
films is also very important factor. The structural
perfection of the epilayer strongly depends on the
conformity between parameters of substrate and layer. It
is now widely acknowledged that substrates are a major
limiting factor in uniformity and reproducibility of MCT
detector arrays. At first sight, the highest crystal
perfection is realized for MCT layers on lattice matched
CdZnTe substrates in contrast to the high defect density
generation due to a large lattice mismatch for MCT
layers on GaAs substrates. As determined by the etch pit
density method, the dislocation density in MBE-grown
MCT films was about 106 cm−2. In LPE-grown MCT
films this value did not exceed 105 cm−2. Hence, they
should be more stable to US influence in accordance
with a phenomenon of the correlation between the
degree of the structural perfection and the value of the
sonically stimulated effect observed for bulk MCT
crystals [8].
0.01 0.1 1
10 -5
10 -4
10 -3
10 -2
0.6 0.7 0.8 0.9
0.0
0.4
0.8
I ,
a.u.
λ , μ m
1
2
R H ,
m 3 C -1
B ,T
1
2
3
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 4. P. 31-35.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
34
But it seems that other factor plays key role here.
The wavelength of ultrasonic applied in our experiment
amounts to 400…700 μm and exceeds the thickness of
grown layers essentially. In other words, the wave
propagation process takes place in the substrate. Hence,
it could be expected that sonically stimulated
phenomena in epilayers are determined by sonically
stimulated processes at the substrate.
It is obvious that the photocurrent is a very
sensitive parameter to the composition and the state of
the point and extended defect system in a semiconductor
crystal. We have investigated the spectral response of
the photocurrent both for MBE-grown and for LPE-
grown structures illuminated from the substrate side
before and after sonication. We also controlled the
photosensitivity value of MCT thin films.
The US effect on the photocurrent spectral
response of the GaAs substrate was insignificant. At the
same time, the sonication of the CdZnTe substrate has
resulted in the photosensitivity increase and the change
of the spectral distribution of the photocurrent (see inset
in Fig. 2). The fact of a better stability for an external
action of GaAs substrate parameters in comparison with
parameters of CdZnTe substrates could be connected
with the larger stacking fault energy and the smaller
ionicity of III-V compounds compared to II-VI ones. It
is also necessary to note, that the photosensitivity of the
MBE MCT epilayers was increased slightly – by a factor
of two, while an essential rise of the photosensitivity of
LPE-grown p-type MCT layers took place after
sonication.
Let us consider the sonication influence on
photocurrent spectra of CdZnTe substrate. The initial
spectrum is a selective peak with the spectral position of
the “red” edge, which corresponds to the bandgap Eg =
1.53 eV (x = 0.04). It was used a relation between the
bandgap of Cd1−xZnxTe compounds and x [9]:
Eg(x) = 1.5045 + 0.631x + 0.128x2. (2)
After sonication, the structure of the photocurrent
spectrum has changed. Data from inset in Fig. 2 clearly
shows that the “red” boundary does not change position
and additional energy peak emerges. Such “broadening”
of the initial peak after sonication is likely to be
associated with macro-inhomogeneity of the solid
solution and formation of Cd1−xZnxTe mixed structure
with variable bandgap between 1.53 and 1.6 eV
(x = 0.04…0.16).
Recently, we have determined (by the example of
Cd1−xMnxTe [10]) that the energy transferred by the
elastic wave is sufficient for the beginning of the point
defect structure transformation that has resulted in the
crystal photosensitivity increasing. We have suggested
that the photosensitivity increase after the sonication of
Cd1−xZnxTe substrate could be associated with the
generation and the following diffusion of vacancies,
which are acceptors and centers of photosensitivity for
CdTe and CdTe-based alloys [11]. It is also well known
that in the A2B6 semiconductor compounds zinc has an
intrinsic tendency to form not only substitutional defects
but also interstitials. Interstitial zinc that is a mobile
donor defect usually associates in clusters and
precipitates at various kinds of macrodefects in the
crystal (dislocations, grain boundaries and twins) [12].
One can assume that sonically stimulated cluster
dissociation and escape of zinc from sinks can be
responsible for the formation of CdZnTe compound with
bigger composition in comparison with matrix. On the
other hand, the change of epilayer properties is possible
in the issue of zinc diffusion from the substrate. As has
been shown in [13], acoustic wave treatment stimulates
the out-diffusion of mobile defects from the CdTe
substrate in p-type CdTe MOCVD epilayers.
Thus, the above results allow making the
preliminary conclusion about a significant role of the
substrate type for the stability of the MCT epilayers. Let
us now consider processes taking place in the epilayer
directly.
4.2. Carrier concentration change in MCT thin films
As it was noted previously, immediately after growth
MBE-grown MCT layers are n-type; p-type MCT layers
are obtained by the annealing in consequence of the
mercury diffusion from the volume, which remains
doped by acceptor-like Hg− vacancies. Evidently, the
similar process occurs during a sonication also as a
result of the local heat release due to the absorption of
US vibration [14] and the decrease of the ion diffusion
activation energy [15]. It could be resulting in the
increase of holes concentration both for MBE, and for
LPE MCT films. The ultrasonic effect is similar to the
process of the natural degradation of MCT in this case.
The sonically stimulated change of the electron
concentration takes place mainly at the expense of the
change of the contribution of low-mobility (“heavy”)
electrons (see Tables). Calculation has shown that heavy
electrons are presented in the initial MBE-grown n-type
MCT layers. In LPE-grown p-type MCT layers they
appear after the first US treatment. After the second
sonication, their contribution (the value of the
characteristic dimension d1ayer) increases in both cases. It
is necessary to note also that the concentration of
“heavy” electrons exceeds considerably the concentra-
tion of “light” electrons.
Heavy electrons are observed both in MCT bulk
crystals [16] and in films grown by LPE [17] and MBE
[18]. But the reasons for their appearance are not always
clear. Thus, low-mobility electrons may be present for
the reason of the conduction band bottom modulation,
due to random distribution of electrically charged
centers giving rise to density-of-states tails, or as a
consequence of the enriched layers at the surface. A
study of galvanomagnetic phenomena in MBE-grown
n-MCT films has shown that the most probable sources
of such electrons are surface layers and electrical
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 4. P. 31-35.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
35
microheterogeneities [19]. As shown in [19], various
surface treatments affect the parameters of low-mobility
electrons. For example, the anodic oxide deposited onto
the MCT film surface makes the concentration of low-
mobility electrons higher and that of anodic fluoride
lower. At the same time, it is necessary to consider the
formation of regions in the bulk, in which the electron
mobility is lower for some reason. The inclusion
boundaries may well be regions of this kind.
Considering the prevalence of the sonic-dislocation
mechanism of the interaction between ultrasonic wave
and crystal [20], we suggest that dislocations including
ambient atmosphere of impurities and intrinsic defects
could be considered as such inclusions with regions of
low-mobility electrons around them. Especially since the
dislocation presence has resulted in the conduction band
bottom modulation also. It is necessary to remind that
the best agreement between measured and calculated
RH(B) dependences for LPE-grown p-type and MBE-
grown n-type MCT layers is obtained if suppose an
existence of the conducting binding layer with “heavy”
electrons. The increase of the characteristic dimension of
this channel after the sonication could be connected with
redistribution in dislocation atmospheres as well as with
a sonically stimulated generation of new dislocations.
5. Conclusion
Thus, the change of electrophysical parameters of MCT
thin films as a consequence of the ultrasonic influence
was investigated. We have demonstrated that the action
of the acoustic wave excited in MCT epilayers by piezo-
transducer results in a change of the charge carrier
concentration up to the conductivity type conversion.
The best agreement between experiment and calculation
is obtained if suppose a sonically stimulated formation
of the layer with an alternative conductivity.
It was also determined that parameters of
HgCdTe/CdZnTe/GaAs heterostructures grown by MBE
are more stable to the high-frequency and high-intensity
elastic deformation effect than HgCdTe/CdZnTe
heterostructures grown by LPE. Substrate properties
have been observed to play a significant role for the
stability of the heterostructure.
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