Electronically induced modification of thin layers on surfaces

Interactions of thermally and electronically stimulated reactions in thin layers on surfaces are investigated. For self-assembled monolayers, thermal activation promotes many processes primarily induced by electronic excitations. We demonstrate that the film temperature is an important parameter f...

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Дата:2007
Автори: Bauer, U., Neppl, S., Menze, D., Feulner, P., Shaporenko, A., Zharnikov, M.
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Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2007
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Цитувати:Electronically induced modification of thin layers on surfaces / U. Bauer, S. Neppl, D. Menzel, P. Feulner, A. Shaporenko, M. Zharnikov // Физика низких температур. — 2007. — Т. 33, № 6-7. — С. 680-688. — Бібліогр.: 28 назв. — англ.

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spelling irk-123456789-1217882017-06-17T03:02:58Z Electronically induced modification of thin layers on surfaces Bauer, U. Neppl, S. Menze, D. Feulner, P. Shaporenko, A. Zharnikov, M. Electronic Processes in Cryocrystals Interactions of thermally and electronically stimulated reactions in thin layers on surfaces are investigated. For self-assembled monolayers, thermal activation promotes many processes primarily induced by electronic excitations. We demonstrate that the film temperature is an important parameter for steering these reactions towards different final products. Using chemisorbed water on Ru(001) as an example, we investigate how the products of an irradiation induced reaction catalyze thermally stimulated dissociation of water molecules. 2007 Article Electronically induced modification of thin layers on surfaces / U. Bauer, S. Neppl, D. Menzel, P. Feulner, A. Shaporenko, M. Zharnikov // Физика низких температур. — 2007. — Т. 33, № 6-7. — С. 680-688. — Бібліогр.: 28 назв. — англ. 0132-6414 PACS: 61.82.–d; 79.20.La; 78.70.–g; 68.43.Vx http://dspace.nbuv.gov.ua/handle/123456789/121788 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Electronic Processes in Cryocrystals
Electronic Processes in Cryocrystals
spellingShingle Electronic Processes in Cryocrystals
Electronic Processes in Cryocrystals
Bauer, U.
Neppl, S.
Menze, D.
Feulner, P.
Shaporenko, A.
Zharnikov, M.
Electronically induced modification of thin layers on surfaces
Физика низких температур
description Interactions of thermally and electronically stimulated reactions in thin layers on surfaces are investigated. For self-assembled monolayers, thermal activation promotes many processes primarily induced by electronic excitations. We demonstrate that the film temperature is an important parameter for steering these reactions towards different final products. Using chemisorbed water on Ru(001) as an example, we investigate how the products of an irradiation induced reaction catalyze thermally stimulated dissociation of water molecules.
format Article
author Bauer, U.
Neppl, S.
Menze, D.
Feulner, P.
Shaporenko, A.
Zharnikov, M.
author_facet Bauer, U.
Neppl, S.
Menze, D.
Feulner, P.
Shaporenko, A.
Zharnikov, M.
author_sort Bauer, U.
title Electronically induced modification of thin layers on surfaces
title_short Electronically induced modification of thin layers on surfaces
title_full Electronically induced modification of thin layers on surfaces
title_fullStr Electronically induced modification of thin layers on surfaces
title_full_unstemmed Electronically induced modification of thin layers on surfaces
title_sort electronically induced modification of thin layers on surfaces
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2007
topic_facet Electronic Processes in Cryocrystals
url http://dspace.nbuv.gov.ua/handle/123456789/121788
citation_txt Electronically induced modification of thin layers on surfaces / U. Bauer, S. Neppl, D. Menzel, P. Feulner, A. Shaporenko, M. Zharnikov // Физика низких температур. — 2007. — Т. 33, № 6-7. — С. 680-688. — Бібліогр.: 28 назв. — англ.
series Физика низких температур
work_keys_str_mv AT baueru electronicallyinducedmodificationofthinlayersonsurfaces
AT neppls electronicallyinducedmodificationofthinlayersonsurfaces
AT menzed electronicallyinducedmodificationofthinlayersonsurfaces
AT feulnerp electronicallyinducedmodificationofthinlayersonsurfaces
AT shaporenkoa electronicallyinducedmodificationofthinlayersonsurfaces
AT zharnikovm electronicallyinducedmodificationofthinlayersonsurfaces
first_indexed 2025-07-08T20:31:27Z
last_indexed 2025-07-08T20:31:27Z
_version_ 1837112165974147072
fulltext Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7, p. 680–688 Electronically induced modification of thin layers on surfaces U. Bauer, S. Neppl, D. Menzel1, and P. Feulner Physikdepartment E20, Technische Universität München, Germany E-mail: feulner@tum.de A. Shaporenko and M. Zharnikov Angewandte Physikalische Chemie, Universität Heidelberg, Germany Received November 7, 2006 Interactions of thermally and electronically stimulated reactions in thin layers on surfaces are investi- gated. For self-assembled monolayers, thermal activation promotes many processes primarily induced by electronic excitations. We demonstrate that the film temperature is an important parameter for steering these reactions towards different final products. Using chemisorbed water on Ru(001) as an example, we investi- gate how the products of an irradiation induced reaction catalyze thermally stimulated dissociation of water molecules. PACS: 61.82.–d Radiation effects on specific materials; 79.20.La Photon- and electron-stimulated desorption; 78.70.–g Interactions of particles and radiation with matter; 68.43.Vx Thermal desorption. Keywords: thin layers, electronic excitations. 1. Introduction Thermal excitations drive all kinds of reactions from diffusion to bond formation and bond breaking. The spec- trum of excitation energies available to surmount activa- tion barriers is a continuum described by the Boltzmann distribution. The energy range relevant for experimen- tally accessible reaction rates at a distinct temperature T is limited to less than ~ 12 kT. The attempt frequencies of thermally stimulated reactions given by the ratios of parti- tioning functions of the initial and the transition states are large, typically 1013 s–1 and beyond; the initial and the transition states are commonly assumed to be in thermal equilibrium [1]. For reactions induced by electronic excitations, either by energetic particles or photons, the situation is com- pletely different. Particularly photons from modern laser and synchrotron sources cover the entire valence and core electron excitation range. Specific electronically excited states at distinct sites in molecules and condensed matter can be selectively prepared by narrow bandwidth excita- tions, either such which are highly dissociative and break bonds, or such which turn an inert particle into a reactive one in order to make bonds. Apart from very few excep- tions [2], electronically induced processes proceed far from equilibrium. In practice, however, both scenarios may well be re- lated. A good example is cryomicroscopy [3]. Energetic electrons in scanning or transmission electron micro- scopes, or photons in x-ray microscopes break bonds, but cryogenic conditions prevent structural changes mainly by hindering diffusion (see Ref. 3 and below). On the other hand, products of an electronically stimulated reac- tion may act as catalyst for further thermally activated process. In this contribution we report such interrelations of both reaction types for thin layers on surfaces. In the first section we focus on thermally stimulated processes promoting irradiation induced modifications of thin orga- nic layers on metal and semiconductor surfaces. Using © U. Bauer, S. Neppl, D. Menzel, P. Feulner, A. Shaporenko, and M. Zharnikov, 2007 1 Also: Fritz-Haber-Institut der Max-Planck-Gesellschaft, Dept. CP, Berlin, Germany. chemisorbed water on the Ru(001) surface as an example, we show in the second section how the products of an electronically stimulated process may catalyze a ther- mally induced conversion, thereby dramatically amplify- ing the effective conversion cross-section. 2. Examples and results 2.1. Thermal effects in beam induced modifications of self-assembled monolayers Self-assembled monolayers (SAMs, Fig. 1) are well ordered arrangements of molecules consisting of headgroups with a specific affinity to the substrate, an aliphatic or aromatic backbone and an endgroup consti- tuting the outer surface of the film (see Ref. 4 for further details). The enormous potential of SAMs in many fields of technology is due to the flexibility in combining different structure elements (headgroup/backbone/endgroup) in order to suit the requirements of even very special appli- cations (see [5] for an overview). SAMs serve as transfer agents in micro and nano printing techniques [5], as func- tional interfaces in bio sensors [5,6], as lubrication in micromechanics [5], corrosion protection [5], as ultrathin resists for lithography with ultimate resolution [5,7], but also as well defined model systems for organic layers on surfaces in fundamental research. Here we focus on the last point, using them for investigations of basic tempera- ture effects on beam induced modifications. Many studies of irradiation effects in SAMs by electrons and to a lesser extent also by photons are reported in the literature, from which we cite three articles in which the reader can find most of the relevant references [8–10]. The majority of these previous reports are room temperature studies, thus neglecting any low-temperature effects. In order to close this gap, we have performed measurement between 50 and 300 K with synchrotron radiation (BESSY-II, U49-II-PGM-1) in the C1s and N1s excitation range for SAMs with aliphatic and aromatic backbones. Here we summarize the main results of these studies. For details of sample preparation, data acquisition or data evaluation the reader is referred to [11,12]. For the above temperature and energy range we find some electronically induced reactions which are nearly temperature independent, and others which strongly de- pend on the sample temperature. Nearly temperature in- dependent radiation effects are those which do not in- volve transport of large fragments; abstraction of H atoms is the best example (see [10] for a description of the mechanism of electron stimulated H abstraction; although primary photons are applied in our study, secondary elec- trons with energies similar to those of [10] will stimulate the majority of abstraction processes even in our case, see below). Abstraction of H atoms leaves bond vacancies which recombine either by double bond formation (if at the same molecule) or by cross-linking (if at neighboring particles) [8]. The consequence of cross-linking will be- come obvious from results below, whereas double bond formation directly shows up in x-ray absorption spectro- scopy (XAS). Figure 2 shows XAS data for the C1s range from Au–S–(CH2)15–CH3 SAMs. Apart from resonances at 288, 293 and 300 eV which are due to Rydberg, (C–H)-�* and (C–C)-�* excitations, respectively [8], an additional peak appears and grows at 285 eV for extended photon ir- radiation. This maximum has previously been assigned to double bond-derived [C1s]�* states formed as a result of radiation induced hydrogen abstraction [8,11]. Compar- ing data at 50 and 300 K, no significant temperature de- pendence is observed for the growth of this maximum as a function of photon exposure (Fig. 2 [11]). At 50 K it grows even slightly faster than at 300 K, due to rapid ma- terial loss at high temperatures, see below. Compared with double bond formation after abstrac- tion of hydrogen atoms, a completely different tempera- ture dependence is obtained for the desorption of large Electronically induced modification of thin layers on surfaces Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7 681 Endgroup Substrate Headgroup Backbone Fig. 1. Structure elements of self-assembled monolayers (see also [4,5]). 290 300 310290 300 310 300 K PEY 1.8 3.6 5.3 7.0 8.7 10 50 K 12 10 7.7 5.2 2.7 PEY Exposure [10 /cm ] 16 2 h� Exposure [10 /cm ] 16 2 h� h , eV� h , eV� Fig. 2. C1s XAS for Au–S–(CH2)15–CH3 SAMs, at 50 and 300 K (for Az polarization, i.e., E-vector perpendicular to the surface normal, after [11]). hydrocarbon fragments by irradiation with soft x-ray pho- tons. Figure 3 shows photon stimulated desorption (PSD) of neutral particles recorded with a mass spectrometer [13] from mercaptoheptadecanenitrile SAMs on Au. At 300 K, PSD of large fragments is much more in- tense than at 50 K. We observe CnHx fragments up to n = 9 which is the upper limit of our mass spectrometer. At 50 K only fragments up to n = 5 are observable, all but those for n = 1 with much smaller amplitudes than at 300 K. De- sorption of larger fragments requires their diffusive trans- port to the vacuum interface of the film which is hindered at cryogenic conditions by the lack of thermal stimula- tion. We believe that the suppression of electronically stimulated desorption of large fragments from organic films at low temperatures is a phenomenon of general va- lidity. It has been observed not only for thiolate bonded SAMs on Au and Ag, but also for alkyls on silicon [11] and diamond [14], and for phosphonate bonded SAMs on silicon oxide [15]. We emphasize that the data of Fig. 3 have been ob- tained under �-resonant excitation of the CN endgroup, i.e., the primary excitation energy has been allocated to a specific bond of the molecule. Although this primary [N1s]�* state is not dissociative, population of highly re- pulsive final states is expected upon core decay. The products of these dissociation processes of the CN end- group, namely C and N atoms, appear in the mass spec- trum (Fig. 3). These site-specific signals which are due to direct photon induced bond breaking do not depend on temperature as expected. However, they are smaller than other desorption maxima even at 50 K. This indicates that the major part of the desorption signal from such layers is due to unspecific, not site selective excitations by second- ary electrons, even for site selective primary excitations of states with large cross section such as the [N1s]�* re- sonance [16]. Irradiation induced material loss can also be moni- tored by x-ray photoelectron spectroscopy (XPS), e.g., by recording the film induced attenuation of the XPS signal from the substrate as a function of irradiation dose and film temperature. From such data cross-section values and information on the saturation behavior of beam damage can easily be derived. Figure 4 shows initial desorption cross-section values for thiolate bonded aliphatic (CH3–(CH2)11–S–Au: C12/Au) and aromatic SAMs (C6H5–C6H4–S–Au: BPT/Au). Integral PSD cross-sections (we continue using the term «PSD», although «ESD» contributes substantially, as shown above) are about 2·10–17 cm2 at 50 K, for C12/Au as well as for BPT/Au. Between 50 and 300 K they increase by a factor of 5 for C12/Au and 3 for BPT/Au. Both layers show saturation behavior, i.e., a dra- matic reduction of beam effects for large exposures. This has previously been explained as due to cross-linking as a consequence of hydrogen abstraction. The cross linking network stabilizes the film against further radiation attack by hindering material transport. On the other hand, it en- ables horizontal delocalization of electronic excitations, thus reducing the probability of excitation localization at 682 Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7 U. Bauer, S. Neppl, D. Menzel, P. Feulner, A. Shaporenko, and M. Zharnikov 20 40 60 80 100 120 NC [N1s]�* excitation of CN Au-S-(CH )2 16-CN 50 K 300 K Mass, amu P S D si g n al Fig. 3. PSD of neutrals by resonant [N1s]�* excitation from Au–S–(CH2)16–CN at 50 K and at 300 K (Az-light). 50 50 100 100 150 150 200 200 250 250 300 300 0 2 4 6 8 10 Au4f C12/Au T, K T, K 2 3 4 5 6 Au4f BPT/Au C ro ss -s ec ti o n , 1 0 cm – 1 7 C ro ss -s ec ti o n , 1 0 cm – 1 7 Fig. 4. Initial desorption cross-sections from (top) C12/Au (h� = 250 eV) and (bottom) BPT/Au (h� = 310 eV). an individual bond. This localization, however, is a pre- requisite for the coupling of the electronic excitation to nuclear motion. At room temperature, this cross-linking effect is much more efficient for aromatic SAMs than for aliphatic layers, see Fig. 5, in perfect agreement with pre- vious experiments [8]. We obviously encounter a competition between cross- linking and material loss. Cross-linking prevents further material loss, but rapid material loss makes the film so po- rous that cross-linking is hindered. From the above re- sults we expect low temperatures to favor cross-linking compared with material loss, because cross-linking re- sults from temperature independent hydrogen abstraction (Fig. 2), whereas material loss is enhanced by thermally stimulated diffusive transport (Figs. 3 and 4). The experi- mental results depicted in Fig. 5 agree with these expec- tations. The lower the temperature, the more efficient the cross-linking induced limitation of material loss. For aliphatic films with their large desorption cross-sections at room temperature (cf. Fig. 3) this effect is most pro- nounced and is of great practical importance. At room temperature stabilization by cross-linking is efficient only for aromatic SAMs, because for aliphatic SAMs material loss is too fast at that temperature. Under cryogenic con- ditions, however, aliphatic SAMs can be stabilized by ra- diation as well. Using temperature as a process parameter, compact and interconnected, or porous aliphatic films can easily be prepared by radiation. We believe this result to be of great importance for many applications, particularly for resist technology. Keeping in mind that cross-linking stabilizes not only against radiative but also against che- mical attack, we foresee the process temperature as a tool to tailor negative or positive resist behavior from identi- cal films. Using thiolate bonded SAMs as an example, we finally focus on radiation induced modifications of the head- group. In previous studies it has been shown that irradia- tion by electrons or photons breaks the thiolate bond, leading either to dialkylsulfide species if sulfur termi- nated hydrocarbon fragments diffuse from the substrate and get trapped by dangling bonds formed by hydrogen abstraction, or to accumulation of atomic sulfur at the substrate. Both species can be well discriminated in XPS. Film temperature modifies this branching (Fig. 6: C12/Au; results for BPT/Au are qualitatively similar). The irradiation induced loss of thiolate species is clearly enhanced at 300 K; it is paralleled by the gain of the dialkylsulfide species. The build-up of atomic sulfur, a process in competition with the dialkylsulfide formation but of much smaller cross-section, is enhanced at low temperature, when the diffusive transport of larger frag- ments from the metal interface — a necessity for the dial- kylsulfide formation — is hindered. We emphasize that negligible changes of the composition of the layer are ob- tained for heating after irradiation. This clearly indicates that cooling not simply freezes the structure, but hinders permanent bond breaking by preventing diffusive trans- port. This is a result of great importance in particular for cryospectroscopy: Cryogenic conditions may allow spec- troscopic investigations of films which under room tem- perature suffer too rapid degradation. On the other hand, we can summarize that temperature is a parameter which steers electronically stimulated modification of all parts Electronically induced modification of thin layers on surfaces Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7 683 50 50 100 100 150 150 200 200 250 250 300 300 5 10 15 20 25 30 35 40 C12/Au R el at iv e ch an g e o f th ic k n es s, % R el at iv e ch an g e o f th ic k n es s, % T, K T, K 4 5 6 7 8 9 10 BPT/Au �d/dpristine �d/dpristine Fig. 5. Saturation behavior of beam damage as a function of temperature: Relative change of layer thickness after extended irradiation for C12/Au (top) and BPT/Au (bottom). 50 100 150 200 250 300 0 10 20 30 40 50 60 70 80 C12/Au thiolate dialkylsulfide atomic S R el at iv e S 2 p in te n si ty , % T, K Fig. 6. Relative amounts of sulfur containing species after ex- posure to 5·10 16 h��cm 2 . of thin organic films on surfaces, a result of the connec- tion of thermal and electronic stimulation. 2.2. Beam induced conversion of water layers on Ru(001) Products of beam induced modifications influencing thermally stimulated reactions is our next topic. Our ex- ample is chemisorbed water on the close-packed Ru(001) surface. Chemisorption of water is of interest for many fields ranging from electrochemistry over fuel cell tech- nology to biological and medical applications. The che- misorption system H2O/D2O on Ru(001) is of special fun- damental interest because it shows an uncommonly large isotope effect in thermal desorption (TD, Fig. 7). Apart from multilayer contributions, TD of chemi- sorbed D2O shows a single maximum for large as well as small heating rates. For H2O, however, the TD spectrum is bimodal. The branching between low- and high-tem- perature TD maxima depends on the heating rate; the cen- ter of gravity is shifted to the second maximum for slow heating. The current interpretation of this unusual behav- ior based on DFT calculations, vibrational spectroscopy and low-energy electron diffraction (LEED) [19–22] is that the molecularly chemisorbed water layer correspond- ing to the low-temperature (= 1st) TD peak is a metastable state. It can transform into a more strongly bound par- tially dissociated layer corresponding to the high-tempe- rature TD maximum which consists of H2O + OH + H (D2O + OD + D, see, e.g., Fig. 3 of [19]). This transforma- tion is an activated process; the barrier between the mo- lecularly chemisorbed and the partially dissociated state is for D2O higher than the barrier for desorption; for H2O it is lowered because of the larger zero point energy of the H–to–O vibration. As a result, two TD maxima are ob- served for H2O, but only one for D2O. This subtle balance between two reaction pathways is efficiently disturbed by small amounts of co-adsorbates, e.g., oxygen or hydrogen atoms. Clay et al. [18] have shown that co-adsorbed oxygen in the percent range low- ers the barrier between the molecular and partially disso- ciated state with respect to desorption, i.e., increases for H2O the second TD maximum at the expense of the first one and induces for D2O the second TD peak which does not exist for the pure layer. Only 0.09 monolayers (ML) of preadsorbed oxygen suffice for complete conversion in TD. Co-adsorbed hydrogen has the inverse effect. Clay’s data are in qualitative agreement with previous results from Doering and Madey [23]. The assumptions about the geometry of the molecu- larly chemisorbed layer have experienced some evolu- tion. The first investigations assumed a layer consisting of two types of differently oriented water molecules ar- ranged in hexagons (Ref. 23, and references therein). Type I had its hydrogen atoms directed towards the O atoms of neighboring water molecules, whereas the hyd- rogen plane of type II was tilted by 90 degrees; one of the O–H bonds was directed to neighboring water, and the other one towards the vacuum («H-up», see, e.g., Figs. 13–15 in [23]). Essentially, this so-called bilayer was obtained by cutting one layer out of hexagonal bulk ice and putting it on a surface. In the meantime this pic- ture has been modified, including also «H-down» mole- cules with one hydrogen directed towards the substrate, which probably is slightly more stable than H-up [19–22]. Very recently it has been proposed that arranging both above types (for type II exclusively H-down) in chains in- stead of hexagons could increase the binding energy even further [22]. The first studies of water on Ru(001) assumed exclu- sively molecular adsorption. The idea of partial dissocia- tion was introduced by Feibelman in 2002 [24]. Based on DFT calculations he concluded that the chemisorption en- ergy of a molecular layer would be lower than the conden- sation energy of bulk ice, i.e., the molecular layer would not wet the surface. As an alternative he suggested the existence of a more strongly bound partially dissociated layer consisting of H2O + OH + H (D2O + OD + D). In [24] a 1:1 ratio was proposed for the H2O and H2O + OH + H (D2O, D2O + OD + D) species, respec- tively. In a later publication this ratio had been changed to 5:3 in order to fit XPS results [25]. The low chemi- sorption energy of the molecular layer and the resulting «nonwetting» argument of [24,25] have been questioned on the basis of more refined DFT calculations and experi- ments (see, e.g., [22] and references therein). There is agreement now that for both H2O and D2O the pure layers before the start of desorption are molecular, i.e., water does wet the Ru surface. Agreement also exists, however, 684 Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7 U. Bauer, S. Neppl, D. Menzel, P. Feulner, A. Shaporenko, and M. Zharnikov 5 K/s D2O/Ru(001) 120 160 200 240 T, K 0.1 K/s multilayer multilayer H2O/Ru(001) 5 K/s 120 160 200 240 T, K 0.1 K/sM as s 1 8 T D , ar b . u n it s M as s 2 0 T D , ar b . u n it s Fig. 7. TD spectra of D2O (left) and H2O (right) from chemi- sorbed layers on the Ru(001) surface as a function of the heat- ing rate (after [17], in perfect agreement with [19]). that a partially dissociated water layer should be more sta- ble than the molecular one (see above). Feibelman’s paper [24] prompted several theoretical as well as experimental studies on this systems. Two of them, both utilizing XPS with synchrotron radiation, came to fully opposite results [25,26]. Reference 25 re- ported XPS data indicating partial dissociation of H2O and D2O at 145 K from the beginning, whereas Ref. 26 found no dissociation of D2O, minor dissociation for H2O, and strong dissociation only for extended exposure to the synchrotron beam or for adsorption at elevated sample temperature, in agreement with the above TD re- sults. In a study partly conducted in our lab we have shown that very low doses of secondary electrons can in fact cause rapid dissociation [17]. Due to experimental re- strictions, it was not possible to irradiate the water layer homogeneously in this previous study, leading to some ar- tifacts in the beam effect’s saturation behavior. For the in- vestigations presented here, we obtained a strictly homo- geneous irradiation profile by scanning a small spot of 200 eV electrons rapidly over the surface by applying tri- angular voltages of different frequencies to the x and y de- flection plates of the electron gun. Monitoring the sample current on an oscilloscope synchronously with the deflec- tion allowed exact adjustment of the scan area to the sam- ple size. From the scan area and the time integrated gun current we obtained electron exposures with an error of less than 10%. Figure 8 shows TD spectra from chemisorbed D2O layers after irradiation with 200 eV electrons under such conditions. These layers have been prepared by dosing D2O beyond saturation of the chemisorbed layer, fol- lowed by controlled annealing to remove multilayer con- tributions before starting the electron bombardment (we will use the term «bilayer» for species obtained by this preparation procedure). After water desorption was completed, the samples were heated to 1570 K in order to remove all residual oxygen before preparing new bilayers. As observed previously [17], electron bombard- ment induces a second TD maximum at expense of the first. As noted previously, this second TD maximum was completely absent for the pristine D2O bilayer. An elec- tron dose of ~ 6·1015 e/cm2 sufficed for complete conver- sion (Fig. 9). This conversion is associated with a loss of ~30% of the total amount of D2O (see TD data in Fig. 9). Fitting the decay of the first TD peak by a simple expo- nential we obtain a cross-section value of 10–15cm–2 (dot- ted line in Fig. 9). This decay is due to conversion into the second TD maximum and to a lesser extent also to de- sorption, see Fig. 9. The main differences of the present investigation com- pared with our previous study [17] is a larger conversion cross-section and the finding of complete conversion. The previously obtained saturation behavior of the con- version at large exposure obviously was due to an inhomogeneous irradiation profile. The value for the conversion and desorption cross-sec- tion of 10–15cm–2 is very large, even for dissociative elec- tron attachment, a process which may exhibit large cross- section values. Considering the strong effect of co-ad- sorbed oxygen and hydrogen ([18] and above), we con- sidered possible catalytic conversion activities of the re- action products produced by irradiation. If such activities were large, the apparent conversion cross-section would be a multiple of the cross-section of the primary electroni- cally stimulated process. We checked this by dosing D2O after thermal desorption of a previously irradiated layer without removing residues by flashing to 1570 K. Fi- gure 10 shows the results. The TD results obtained after irradiation (full lines), and the TD spectra recorded after re-dosing of D2O are practically identical, supporting the above hypothesis. We note that a qualitatively similar ef- Electronically induced modification of thin layers on surfaces Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7 685 160 180 200 220 240 6.3 6.3 3.1 3.1 1.3 1.30.6 0.6 0.3 0.3 0 0 Exposure [10 e/cm ] 15 2 D O T P D , ar b . u n it s 2 T, K D O TPD 5 K/s 2 1 Fig. 8. Electron induced modifications of TD spectra from a saturated chemisorbed layer of D2O/Ru(001) as a function of (homogeneously distributed) electron exposure. Total amount of D O2 2nd TPD peak 1st TPD peak R el at iv e T D p ea k ar ea s Exposure, 10 e /cm –15 – 2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 Fig. 9. TD peak areas as a function of electron exposure. fect has been seen before already by Faradzhev [27] dur- ing the experiments reported in [17]. As will be shown below by XPS, irradiation induced perturbation of the hy- drogen/oxygen balance catalyzes the conversion between the two TD states. We note that electron bombardment beyond the dose necessary for complete conversion of the layer changes the shape of the TD peaks further (Fig. 11). Apart from an area reduction due to stimulated desorption of D2O or D (both alternatives would reduce TD of intact water), we find additional shoulders at low as well as at high tempe- rature. Similar effects have been observed for co-adsorp- tion of large amounts of oxygen (cf. [23] and [28]). O1s XPS data from D2O bilayers after irradiation and after TD with a heating rate of 5 K/s up to 260 K are shown in Fig. 12. Care was taken to minimize beam dam- age. A small, constant, and preparation independent O1s contribution stemming from the crystal mount has been subtracted from all spectra. For pristine D2O bilayers a single O1s maximum at 533 eV binding energy was observed in good agreement with [26] (the minimum ex- posure of 6·1013 eV/cm2 in Fig. 12 corresponds to that by Al K� photons during data acquisition, i.e., its possible damage effect constitutes the minimum attainable). After TD of a pristine bilayer corresponding to zero exposure, no residual oxygen could be observed (Fig. 12). After irradiation of a D2O bilayer with 6.3·1015 e/cm2, i.e., the dose which induces complete conversion, the O1s XPS peak became bimodal (Fig. 12). The main peak was shifted to a lower binding of 532.5 eV, and a second maxi- mum appeared at 531 eV. The ratio of the two maxima was ~ 5:1. 686 Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7 U. Bauer, S. Neppl, D. Menzel, P. Feulner, A. Shaporenko, and M. Zharnikov 140 160 180 200 220 240 D O si g n al 2 T, K 0.65·10 e /cm 15 – 2 readsorption 1.3·10 e /cm 15 – 2 readsorption Fig. 10. TD spectra obtained after electron irradiation (full lines) and after readsorption of D2O (broken lines). Readsorp- tion was done by dosing an amount of D2O corresponding to a full bilayer after the post-irradiation TD spectrum (full line) was completed. Because no annealing was applied in order not to disturb peak shapes, small multilayer contributions are vi- sible at the leading edges of the readsorption spectra. 160 180 200 220 240 260 32 63 6.3 0 T, K Exposure [10 e /cm ] 15 – 2 D O T P D , ar b . u n it s 2 D O TPD 5 K/s 2 1 Fig. 11. TD spectra obtained after large homogeneous electron exposures. 536 534 532 530 528 0 63 6.3 < 0.06 O 1 s si g n al , ar b . u n it s E , eVB Exposure [10 e/cm ] 15 2 Fig. 12. XPS data for the O1s range obtained after electron ir- radiation (a), and after electron irradiation and TD up to 260 K (Al K� radiation(b)); smooth lines are fitting results. We note that the growth of the second O1s peak as well as the redshift of the first one occurred gradually with in- creasing electron exposure, without any threshold beha- vior. We also note that XPS spectra recorded from an ini- tially completely converted layer after a TD run up to 200 K, i.e., the temperature corresponding to the mini- mum between the two TD peaks (Fig. 8), showed only marginal changes (not shown). The high beam effects (BE) maximum was slightly decreased due to TD in this temperature range (compare Fig. 8), and the low BE maxi- mum was increased by ~10%, obviously due to conversion between the two states. Nevertheless, the ratio of both peak areas was still ~ 4:1. This result is surprising with respect to the conver- sion of molecular to partially dissociated water sketched above [19–22]. Naively one would assign the first (i.e., low-temperature) TD peak to the molecularly absorbed layer, and the second one to the partially dissociated film. As a result, one would expect a single O1s peak cor- responding to intact water for the pristine layer, and a two peak structure corresponding to the co-existence of D(H)2O and OD(H) + D(H) for the partially dissoci- ated layer responsible for the second TD maximum. The one/two peak structures are observed, but the peak ratio at the onset of the second TD maximum fits neither the 1:1 ratio of the structure proposed in [24] nor the 5:3 ratio of the revised version from [25]. Area ratios close to 1:1 are observed only for electron exposures beyond the electron dose required for complete TD conversion (Fig. 12). As mentioned above, no residual oxygen could be de- tected after TD of pristine D2O layers. After TD of a layer irradiated until complete conversion (6.3·1015 e/cm2 trace in Fig. 12), a residual oxygen signal at 530.5 eV BE corresponding to 8% of the initially present oxygen or ~ 0.1 ML was detected, in perfect agreement with the amount of co-adsorbed oxygen necessary for complete conversion [18]. Excessive bombardment increases the residual oxygen signal from 8 to 13% (Fig. 12). This value is close to the oxygen amount found in [25] after the desorption of nominally pure D2O and H2O layers. From the results shown in Figs. 10 and 12 we conclude that irradiation with a distinct electron dose has the same effect on the TD spectrum and probably also on the com- position of the layer as co-adsorption of exactly the amount of oxygen which is left over after TD of the irradi- ated layer. The XPS results, however, indicate that the ir- radiated layer is not simply a combination of D2O, OD and isolated O; the O1s peak of low BE from the irradi- ated layer has a larger BE than the residual O obtained af- ter TD. We obviously do not encounter isolated O atoms in the irradiated layer but O atoms which are always correlated with hydrogen. The binding energies for the post-TD O1s peak and for the ODx peak of the irradiated layer become more equal for extended irradiation which also means increased loss of hydrogen (Fig. 12). In summary, we conclude from our data that the beam effects observed in our study and previous ones are due to a beam induced perturbation of the H to O ratio in the ad- sorbed water layer, in perfect agreement with previous co-adsorption experiments [18]. Future experiments de- tecting selectively the amount of H on the surface during and after TD could test this hypothesis. This perturbation obviously has a very strong effect on the barrier for par- tial dissociation of the molecular layer which explains the very large effective conversion cross-section. Comparing TD (Fig. 9) and XPS results (Fig. 12 and text), we tenta- tively conclude that this beam (or co-adsorbate) induced partial dissociation is by far not complete at the minimum between the two TD peaks. According to our data only ~20% of the layer would be due to an OD like species. Further dissociation stabilizing the layer and leading to a continuously increasing activation energy for desorption is assumed to occur during TD of the second state. This would explain the shape of the high-temperature TD peak which because of recombinative desorption should show a reaction order not smaller than 1, but in fact exhibits a slope ratio of leading/trailing edges which is either typi- cal for a reaction order < 1, or an activation energy which increases with decreasing coverage. As mentioned above, future in-situ analysis of the layer composition is required for final conclusions. We finally would like to address the point of beam in- duced artifacts in previous studies. From the results above it is clear that layer modifications by irradiation cannot be discriminated from the effect of co-adsorbed oxygen; such oxygen could be due to incomplete removal of previously prepared layers or to poor vacuum. On the other hand, contamination by hydrogen would have the opposite effect. One could argue that the discrepancies between our present study and those of [17–22,26] com- pared with the results reported in [25] are due to hydrogen contamination in our case and in [17–22,26]. We believe this not to be the case. All our results have been ob- tained under very good UHV conditions (base pressure 2·10–11mbar), and all results have been reproduced seve- ral times. In addition, perfect agreement exists between our study and those from Refs. 17–22, 26, where compa- rable. In summary, chemisorption of water on the Ru(001) surface was found to be a challenging system for theorists as well as for experimentalists. For theoreticians because of the difficulties arising from treating hydrogen bonds correctly, and for experimentalists because of the extreme sensitivity of this system to perturbations by coadsorbates and by irradiation. On the other hand, this system is an outstanding example for the large effect which the prod- ucts of a beam induced reaction can have on an intrinsi- Electronically induced modification of thin layers on surfaces Fizika Nizkikh Temperatur, 2007, v. 33, Nos. 6/7 687 cally thermally stimulated process like the partial dissoci- ation of the water molecule. Acknowledgments We thank D.L. Allara for supporting us with the sub- stance for the nitrile terminated SAMs, K.L. Kostov, N. Faradzhev and T.E. 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