Radiation-stimulated processes in silicon structures with contacts based on TiN
The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, t...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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irk-123456789-1218192017-06-19T03:03:18Z Radiation-stimulated processes in silicon structures with contacts based on TiN Nasyrov, M.U. Ataubaeva, A.B. The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains. 2015 Article Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.220 PACS 61.80.-x http://dspace.nbuv.gov.ua/handle/123456789/121819 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains. |
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Article |
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Nasyrov, M.U. Ataubaeva, A.B. |
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Nasyrov, M.U. Ataubaeva, A.B. Radiation-stimulated processes in silicon structures with contacts based on TiN Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Nasyrov, M.U. Ataubaeva, A.B. |
| author_sort |
Nasyrov, M.U. |
| title |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_short |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_fullStr |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full_unstemmed |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_sort |
radiation-stimulated processes in silicon structures with contacts based on tin |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2015 |
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http://dspace.nbuv.gov.ua/handle/123456789/121819 |
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Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT nasyrovmu radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin AT ataubaevaab radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin |
| first_indexed |
2025-07-08T20:34:33Z |
| last_indexed |
2025-07-08T20:34:33Z |
| _version_ |
1837112360526938112 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 220-225.
doi: 10.15407/spqeo18.02.220
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
220
PACS 61.80.-x
Radiation-stimulated processes in silicon structures
with contacts based on TiN
M.U. Nasyrov, A.B. Ataubaeva
Berdakh Karakalpak State University, 742000, Nukus, Uzbekistan,
Phone: +998 (61) 223-60-45; e-mail: a_akkumis@mail.ru
Abstract. The influence of irradiation on the structural properties of titanium nitride
films deposited on silicon wafers has been considered. It has been shown that depending
on the energy, fluence and type of irradiation ion, observed are the increase of
accumulated damages with decreasing the grain size, the grain size reduction with
increasing the fluence, the increase of dislocation density and microstrains.
Keywords: radiation-stimulated processes, silicon structure, titanium nitride film, contact.
Manuscript received 11.12.14; revised version received 10.04.15; accepted for
publication 27.05.15; published online 08.06.15.
1. Introduction
Recently, the subject of intense researches is
antidiffusion layers based on nanocrystalline refractory
compounds that are used to enhance stability of the
contacts to silicon devices. These contacts are used to
create high-reliability devices for power and microwave
electronics. Preparation and improvement of
nanocrystalline materials for solid state microwave
electronics is particularly important line of many
researchers [1-16]. Due to high thermal, chemical and
irradiation resistance, this class of nanomaterials can
improve the quality and reliability of the contacts, and
thus can be used as a diffusion barrier in the contact
metallization [9-12]. In this work, presented has been the
analysis of the results on the effect of radiation exposure
(irradiation with Ar
+
, V
+
and He
+
ions) on the structural
properties of the titanium nitride films used as diffusion
barriers in silicon contact structures.
2. Analysis of radiation-stimulated processes
in TiN-Si contacts
Of interest to the technology of silicon integrated circuits
are amorphous (nanostructured) titanium nitride films,
electrical and structural properties of which are well
known and described in the works by R.A. Andrievskii.
For example, in [17, 18] their stability under radiation
exposure were considered. Hand in hand with this, it was
shown that, depending on the irradiation dose, in
nanostructured materials the radiation-stimulated
diffusion and mass transfer, recrystallization, and other
relaxation phenomena can be observed. At the same
time, changes in the properties of irradiated
nanomaterials, which were caused by the influence of
sized effects and interfaces, are poorly studied and
require further investigation.
In the work [19], on irradiation with He
+
ions with
the energy 12 keV, at fluence of 410
16
cm
–2
at room
temperature of the thin TiN films (the thickness is close
to 100 nm) having various grain sizes (8 to 100 nm),
there observed is accumulation of damages that are
spatially distributed highly defect zone of 35-nm
thickness at the bottom of TiN film. Fig. 1a shows TEM
image of the initial TiN film deposited on Si substrate at
T = 700 °C with a rather sharp interface TiN/Si and grain
size of ~100 nm. After irradiation with He
+
ions with the
energy 12 keV, at the fluence 410
16
cm
–2
, the cleavage
morphology of TiN/Si with an extended defect area in
the TiN film is shown in Fig. 1b.
After increasing the energy of irradiation with He
+
ions up to 35 keV, at fluence to 410
17
cm
–2
the damage
extends to the depth close to 200 nm into the Si substrate
(Fig. 1c). In the TiN film deposited at 500 °C with the
grain size 50 nm, after irradiation at the fluence
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 220-225.
doi: 10.15407/spqeo18.02.220
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
221
1.010
16
cm
–2
, the damaged layer reaches 30 nm
(Fig. 2a). In the TiN film with the grain size 30 nm
deposited at 350 °C, the defect area corresponds to
20 nm (Fig. 2b). Finally, the thickness of the damaged
layer less than 5 nm is observed in the TiN film with the
grain size 8 nm deposited at room temperature (Fig. 2c).
Thus, from the above data it is seen that the thickness of
the damaged layer decreases with decreasing the grain
size, and the latter increases with increasing the
deposition temperature.
The above studies show that the nanocrystalline
TiN films with fine grains have better radiation
resistance than materials with a large grain size. It is
confirmed by the absence of amorphization on the
boundaries of the crystallites with the size 8 nm (Fig. 3),
pointing to the fact that the grain boundaries can act as
effective diffusion sinks of radiation defects in
accordance with [20].
The authors of [21] studied the effect of irradiation
with Ar
+
ions possessing the energy 120 keV, fluences of
110
15
cm
–2
and 110
16
cm
–2
on the TiN film deposited
onto Si at room temperature and at 150 °C. X-ray analysis
of the results showed that the titanium nitride was formed
even in the deposition process at room temperature. It is
confirmed by the presence of reflections TiN (111), (200),
(220) and (311) (Fig. 4a). Here, it is seen that the
reflections from TiN (220) are clearer pronounced than
those from TiN (111), (200) and (311).
Fig. 1. TEM images of TiN films deposited (at 700 °C) before
(a) and after irradiation with He+ ions E = 12 keV, fluence of
41016 cm–2 (b) and E = 35 keV, fluence of 11017 cm–2 (c) [19].
Fig. 2. TEM images of TiN films deposited at 500 °C (a),
350 °C (b), and at room temperature (c) and irradiated with
He+ ions (E = 12 keV, fluence 41016 cm–2) [19].
Fig. 3. High-resolution TEM image of the TiN films deposited
at room temperature and irradiated with He+ ions (E = 12 keV,
fluence 41016 cm–2) [19].
In the X-ray diffractogram of TiN films deposited at
150 °C and irradiated at fluences 10
15
and 110
16
cm
–2
(Figs. 5a to 5c), unlike those deposited at room
temperature, the reflections from TiN (200) were not
observed (Figs. 4a to 4c), which indicates the partial
structuring of titanium nitride relative to the substrate.
TEM results presented in [21] for these structures (Fig. 6)
have shown that the TiN layer deposited at 150 °C is
polycrystalline. It contains fine grains of different
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 220-225.
doi: 10.15407/spqeo18.02.220
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
222
orientations (Figs. 6a to 6c). Irradiation at the fluence
110
16
cm
–2
does not lead to dispersion of the diffraction
rings, indicating the presence of an amorphous phase
(insert in Fig. 6b), since in all the samples before and after
irradiation there observed are reflections from TiN(200)
(Figs. 6a to 6c) that are absent in the X-ray diffractogram
(Figs. 5a to 5c). The authors [21] believe that
amorphization is not the main reason for radiation-
induced damages created in the field of thin TiN layers.
TiN layer deposited at 150 °C contains columnar
crystallites with the diameter of columns close to 30 nm
(Fig. 6a). After irradiation with Ar
+
ions at fluences up
to 110
15
cm
–2
on the TiN film surface, the damaged area
of the thickness approximately 50 nm is formed
(Fig. 6b). The authors [21] suggest that changes in the
microstructure shown in Fig. 6 are associated with
increasing migration, annihilation and agglomeration of
defects stimulated by irradiation. This surface of TiN
containing defects can act as a getter for defects located
in the region below the surface. The results of the study
of surface morphology of TiN layers [21] deposited at
room temperature (Fig. 7a) have shown that the obtained
TiN film is homogeneous. Its roughness after irradiation
decreases from ~0.5±0.03 nm down to ~0.3±0.02 nm
(Fig. 7b). Furthermore, the average grain size is reduced
from ~13±2 nm down to ~7±0.02 nm.
Fig. 4. X-ray diffractorams of TiN films deposited at room
temperature: initial deposited layer (a); irradiated at
11015 cm–2 (b), 11016 cm–2 (c) [21].
Fig. 5. X-ray diffractorams of TiN films deposited at 150 °C:
initial deposited layer (a); irradiated at 11015 cm–2 (b),
11016 cm–2 (c) [21].
Fig. 6. TEM images and corresponding microdiffraction
patterns of TiN/Si structures deposited at 150 °C before (a) and
after irradiation with Ar+ ions, fluences 11015 cm–2 (b) and
11016 cm–2 (c) [21].
Fig. 7. AFM images of the surface of TiN film deposited on Si
at room temperature before (a) and after irradiation with Ar+
ions (E = 120 keV, fluences 11016 cm–2) (b) [21].
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 220-225.
doi: 10.15407/spqeo18.02.220
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
223
Fig. 8. TEM images and electron diffraction pattern of TiN-Si
structure deposited at 150 °C before (a) and after irradiation
with Ar+ ions, at the fluence 21016 cm–2 (b); (c) high-
resolution TEM image of the damaged area (b) [22].
Fig. 9. Change in the average grain size of TiN films
depending on the fluence of Ar+ ions [23].
The authors [21] also found that irradiation with
Ar
+
ions possessing the energy 120 keV at the fluences
110
15
cm
–2
and 1.010
16
cm
–2
of the TiN films with the
thickness ~240 nm and grain sizes 13 to 16 nm grown on
silicon substrates leads to decreasing the lattice constant
for TiN from 0.427 down to 0.423 nm and increasing
microdeformation of layers. Here the stoichiometric
composition (~1.0) of TiN remains unchanged after
irradiation.
In [22], there studied is the comparative effect of
irradiation with E = 200 keV, Ar
+
ions, at the fluences
510
15
to 210
16
cm
–2
and that with E = 80 keV, V
+
ions,
at the fluence 210
17
cm
–2
at room temperature on the
TiN films of the thickness 240 nm prepared using the
reactive ion sputtering onto the Si(100) wafers at 150 °C.
TEM studies [22] showed that the initial TiN film has a
polycrystalline columnar structure along its full
thickness with the (111), (200) and (220) orientations
(Fig. 8a). Irradiation with Ar
+
ions, at the fluence
210
16
cm
–2
destroys the columnar structure in the upper
layer at the thickness close to 160 nm. The residue of the
TiN film keeps its structure (Figs. 8b and 8c).
The damaged top layer according to the X-ray
diffractogram consists of nanocrystalline grains with the
diameter of 7 to 10 nm. The interplanar distances 0.245,
0.212 and 0.149 nm correspond to TiN (111), (200) and
(220) planes (Fig. 8c), respectively.
As a result of irradiation of TiN film with V
+
ions,
at the fluence 210
17
cm
–2
, it was found that the TiN film
consists of amorphous (oxidized) surface layer of 20 to
30 nm thickness, damaged 120 to 170 nm thick layer
containing V, and the rest TiN sublayer of columnar
structure.
The X-ray diffractograms of deposited and ion-
implanted TiN films presented in [22] show that, at
36.21° in the deposited film, the reflection (111) from
the cubic phase in polycrystalline TiN is revealed. It
indicates predominance of (111) orientation during
growth of the TiN film. The small shift and broadening
Table. Data on the effect of irradiation with different ions on the structure and properties of the TiN films deposited onto
silicon wafers [19, 21-23].
Object and
references
Grain
size, nm
Irradiation conditions
Main results
Ion Energy, keV
Dose,
fluence, cm–2
Т, K
TiN film with the
thickness
~100 nm [19]
8–100 He+ 12, 35 4∙1016–1017 293
With decreasing grain size the
radiation resistance increases
TiN film with the
thickness
~240 nm [21]
13–16 Ar+ 35 1015–1016 293
With increasing fluence the grain
size decreases, microstrains and
dislocation density increase
TiN film with the
thickness
~240 nm [22]
16 V+ 80 2∙1017 300
The reflections from vanadium
nitride VN in the amorphous state
without formation of ternary
compounds are observed.
TiN film with the
thickness
~240 nm [23]
16 Ar+ 200 5∙1015–2∙1016 300
Grain sizes are reduced down to
8 nm, while the average balance
of N:Ti atoms is kept uncharged.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 2. P. 220-225.
doi: 10.15407/spqeo18.02.220
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
224
the peak of TiN (111) are observed after implantation of
Ar
+
ions. It is assumed that the reason for these changes
is reduced content of nitrogen after ion-induced rupture
of Ti/N bonds. It decreases the size of the crystallites,
which has practically no effect on the average balance of
N:Ti atoms in the damaged area.
The results obtained by the authors [21-23] have
shown that irradiation with Ar
+
ions leads to formation
of small crystallites (Table), the size of which decreases
with increasing the fluence (Fig. 9). This is because the
defects appear after irradiation and destroy the columnar
structure of TiN film.
In [24] the authors carried out comparative studies
of the effect for reactive sputtering methods – the
method of ion implantation (II) as well as the method of
condensation and ion bombardment (CIB) – on the
growth mechanism and the phase composition of the
TiN films obtained on the single-crystal Si wafers. The
target in both methods was titanium plate, and the
reactive gas – nitrogen. The results showed that the
II method leads to significantly higher (~1.7%)
compression of the substrate than the CIB method
(~1.1%). In the II method, the diffraction patterns, in
addition to the lines of Si, Ti-Si, contain the lines of
slightly textured nitride Si3N4, which are not seen in the
diffraction patterns in the CIB method. Besides, as in the
CIB method, from the outside coating, the islands of
SiO2 oxide in the crystalline and amorphous forms are
formed. It is found that the TiN films obtained by the
II method are multiphase, and those obtained using the
CIB method are diphase and consist of titanium nitride
and titanium oxide. The silicon substrate in the initial
period of film formation is intensively sputtered, and
then the process of implantation of Ti, N2 and O2 ions
dominates over emission of atoms from the substrate.
Emerging nitrides creates a diffusion barrier for O2
atoms, so oxides arise on the outer surface of the films.
The TiN films obtained by the II method contain nitrides
and oxides of Si atoms, as well as nitride and oxide of
titanium (TiN, TiO2). Similar comparative studies were
performed by the authors [25].
3. Conclusions
These data show that the TiN films are effective
materials when they are used in the systems of contact
metallization as diffusion barriers in silicon
semiconductor device technology. It is important to note
the desirability of further comprehensive studies for the
mechanisms of radiation resistance of diffusion barriers
based on nanostructured TiN films.
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