Publication Ethics and Publication Malpractice Statement
Gespeichert in:
| Datum: | 2016 |
|---|---|
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121861 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Publication Ethics and Publication Malpractice Statement // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121861 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1218612017-06-19T08:44:58Z Publication Ethics and Publication Malpractice Statement 2016 Article Publication Ethics and Publication Malpractice Statement // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — англ. 1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/121861 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| format |
Article |
| title |
Publication Ethics and Publication Malpractice Statement |
| spellingShingle |
Publication Ethics and Publication Malpractice Statement Semiconductor Physics Quantum Electronics & Optoelectronics |
| title_short |
Publication Ethics and Publication Malpractice Statement |
| title_full |
Publication Ethics and Publication Malpractice Statement |
| title_fullStr |
Publication Ethics and Publication Malpractice Statement |
| title_full_unstemmed |
Publication Ethics and Publication Malpractice Statement |
| title_sort |
publication ethics and publication malpractice statement |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2016 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121861 |
| citation_txt |
Publication Ethics and Publication Malpractice Statement // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| first_indexed |
2025-07-08T20:41:24Z |
| last_indexed |
2025-07-08T20:41:24Z |
| _version_ |
1837112790780739584 |
| fulltext |
INFORMATION FOR CONTRIBUTORS to
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS AND OPTOELECTRONICS
124
Semiconductor Physics, Quantum Electronics and
Optoelectronics is an international scientific journal
publishing fundamental and applied papers (up to 15 pages)
and short notes (up to 3 pages) in the area of:
· semiconductor physics;
· hetero- and low-dimensional structures;
· physics of microelectronic devices;
· linear and nonlinear solid-state optics;
· optical storage and holography;
· optoelectronics and optoelectronic devices;
· quantum electronics;
· sensors.
The journal accepts also advertisements and
announcements of conferences as well as publications on
related topics.
Semiconductor Physics, Quantum Electronics and
Optoelectronics is published quarterly. Subscription
requests should be sent to the Editorial Office.
Manuscripts should be submitted in duplicate in English
and supplemented with a text file and figures on a diskette.
An electronic copy may be submitted by e-mail.
The rules for submission of electronic copies are as
follows:
1. An electronic copy should be submitted on a diskette or
by e-mail simultaneously with sending a hard copy of the
manuscript.
2. Acceptable text formats: plain text (.txt), rich text format
(.rtf), tagged text (ASCII), MultiEdit (.txt), WordPerfect,
MS Word (.rtf, .doc), PageMaker (.rtf, .pm).
3. Acceptable graphic formats for figures: EPS, TIFF, BMP,
PCX, CDR, WMF, MS Word and MS Graf, MicroCalc
Origin (opj), JPG. Figures created using software for
mathematical and statistical calculations should be
converted to one of these formats.
Manuscripts should be sent to:
Editorial Board of Semiconductor Physics, Quantum
Electronics and Optoelectronics
Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +380 (44) 525 6205, Fax: +380 (44) 525 5430
E-mail: journal@isp.kiev.ua
Manuscript preparation rules:
Manuscript submission forms are available on the Internet:
www.journal-spqeo.org.ua
Manuscripts should be supplemented with:
Official letter signed by a chief manager of the institution
where the work was performed. This rule does not apply to
papers submitted by international groups of authors.
Publication permission: conclusion of a commission
authorized to permit open publication of the paper (only for
authors from Ukraine and other FSU countries).
Agreement on copyright transfer to the Publisher.
Copyright transfer forms may be obtained from the Editorial
Office. These are accessible on the Internet page above.
Title Page:
1. PACS and Universal Decimal Classification code (for
authors from FSU). Several comma-separated codes are
allowed. If no classification codes are indicated, the code(s)
will be assigned by the Editorial Board.
2. Title of the paper and name(s) of the author(s).
3. Name of affiliated institution, full address, telephone and
fax numbers, e-mail addresses (if available) for each author.
Abstract: up to 200 words, must be presented in English,
Ukrainian and Russian. Before the abstract text one should
indicate in the same language: the paper title, surnames and
initials of all authors.
Keywords: their amount must not exceed eight word units.
In the specific cases it is acceptible to use two- or three-
word terms. These words must be placed under the abstract
and written in the same language.
Text should be printed double-spaced on white paper (A4
format) with a 12-point font. Titles of the paper and sections
should be typed with bold capitals.
Equations should be entered using MS Equation Editor.
Papers with handwritten equations are not accepted.
Notations should be defined when first appearing in the text.
Tables should be submitted on separate pages in the format
of appropriate text processors (see above), or in the text
format (with columns separated by periods, commas,
semicolons, or tabulation characters). Use of pseudo-
graphic characters is not allowed.
List of references should be double-spaced, with references
numbered in order of their appearance in the text.
The format for references is as follows:
Books: Author(s) (initials, then last names), book title (in
italics), publishers, city and year of publishing. (If
reference is made to a particular chapter, indicate chapter
title, book title in italics, and page numbers). Example: J. A.
Hall, Imaging tubes, Chap. 14 in The Infrared Handbook,
Eds. W. W. Wolfe, G. J. Zissis, pp. 132–176, ERIM, Ann
Arbor, MI (1978).
Journals: Author(s) (initials, then last names), paper title,
journal name in italics (use abbreviated names only for
well-known journals), volume and issue numbers, page
numbers, year of publishing. Example: N. Blutzer and A. S.
Jensen, Current readout of infrared detectors // Opt. Eng.
26(3), pp. 241–248 (1987).
Captions for figures and tables should be printed in the
manuscript double-spaced after the list of references.
Footnotes should be avoided if possible.
Pictures will be scanned for digital reproduction. Only high-
quality pictures can be accepted. Inscriptions and symbols
should be printed inside. Negatives, slides, and
transparencies are not accepted.
Figures: each figure should be printed on a separate page
of the manuscript and have a size not exceeding 160×200
mm. For text in figures, use 10-point fonts. Measurement
units should be indicated after a comma (not in
parentheses). All figures are to be numbered in order of
their appearance in the text, with sections denoted as (a),
(b), etc. Placing figure numbers and captions inside figures
is not allowed. On the back side, write with a pencil the
paper title, author(s) name(s) and figure number, and mark
the top side with an arrow.
Photographs should be submited as original prints.
Color printing is possible if its cost is covered by the
authors or their sponsors. For information about the rules
and costs, contact the Executive Secretary.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 125-126.
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
125
Contents
1-8 Lowering the density of dislocations in
heteroepitaxial III-nitride layers: Effect of
sapphire substrate treatment (review)
P.V. Parphenyuk, A.A. Evtukh
9-13 Electron transport through nanocomposite
SiO2(Si) films containing Si nanocrystals
O.L. Bratus, A.A. Evtukh, O.V. Steblova,
V.M. Prokopchuk
14-22 Physical mechanisms and models of the
long-term transformations in radiative recombi-
nation observed in n-GaAs under microwave
irradiation
G.V. Milenin, R.A. Redko
23-27 Аutomated method for determining the etch
pits density on crystallographic planes of large
semiconductor crystals
G.S. Pekar, А.А. Singaevsky, А.F. Singaevsky
28-33 Search of mode wavelengths in planar
waveguides by using the wave equation Fourier
transform method
V.M. Fitio, V.V. Romakh, Ya.V. Bobitski
34-38 Acoustic-stimulated relaxation of GaAs1–хPх
LEDs electroluminescence intensity
O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi,
Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska,
V.P. Tartachnyk
39-43 Features of tensoresistance in single crystals
of germanium and silicon with different dopants
P.I. Baranskii, G.P. Gaidar
44-46 Temperature effect on light polarization in
uniaxial crystals
M.R. Kulish, V.M. Litvinova, M.I. Malysh,
I.O. Sokolovskyi
47-51 Speckle pattern formation in spatially
limited optical systems
M.M. Kotov, V.N. Kurashov, A.A. Goloborodko
52-56 Increasing the specularity of surface
scattering of conduction electrons caused by
adsorption of a hydrogen monolayer on the
W(110) surface
S.V. Sologub, I.V. Bordenyuk, O.V. Kanash,
R.H. Amirov
57-61 Optical properties of graphene film growing
on a thin copper layer
T.S. Rozouvan, L.V. Poperenko, V.G. Kravets,
I.A. Shaykevich
62-66 Peculiarities of photoluminescence spectra
behavior in SiC crystals and films during phase
transformations
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin,
V.E. Rodionov, G.S. Svechnikov
67-74 Analysis of the silicon solar cells efficiency.
Type of doping and level optimization
A.V. Sachenko, V.P. Kostylyov, M.V. Gerasymenko,
R.M. Korkishko, M.R. Kulish, M.I. Slipchenko,
I.O. Sokolovskyi, V.V. Chernenko
75-78 Thermally stimulated conductivity in
InGaAs/GaAs quantum wire heterostructures
S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev,
Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo
79-83 Electrical and optical parameters of
Cu6PS5I-based thin films deposited using
magnetron sputtering
I.P. Studenyak, A.V. Bendak, V.Yu. Izai,
P.P. Guranich, P. Kúš, M. Mikula, B. Grančič,
M. Zahoran, J. Greguš, A. Vincze, T. Roch,
T. Plecenik
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 1. P. 125-126.
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
126
84-89 Optimization of surface plasmon resonance
based biosensor for clinical diagnosis of the
Epstein–Barr herpes virus disease
R.V. Khrystosenko
90-97 Microanalysis of magnetic structure of
yttrium-iron garnet films by scanning probe
microscopy methods
O.I. Synhaivska, P.M. Lytvyn, I.P. Yaremiy,
A.O. Kotsyubynsky, V.V. Kozub, V.S. Solnstev,
I.V. Prokopenko
98-108 Electronic structure of 2H-SnSe2: ab initio
modeling and comparison with experiment
D.I. Bletskan, K.E. Glukhov, V.V. Frolova
109-115 Carbon ceramics from plants: Graphitiza-
tion of biomorphic matrixes
D.A. Iarmolenko, A.E. Belyaev, V.S.Kiselov
116-123 The charge trapping/emission processes in
silicon nanocrystalline nonvolatile memory assisted
by electric field and elevated temperatures
V.A. Ievtukh, V.V. Ulyanov, A.N. Nazarov
124 Information for contributors
125-126 Contents
127 Publication Ethics and Publication
Malpractice Statement
|