Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase
A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as i...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121862 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe
single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size)
with natural faceting were grown by vapor transport in silica ampoules with a special
shape using a polycrystalline ingot as initial source material. It is shown that
minimization of plastic deformation effect in preparation of the most structurally
perfect crystals is possible by a way of heat removal from the crystallization front by
radiation. The growth of high-resistive material required careful preparation of the
initial charge with close to stoichiometric composition. The obtained crystals were
successfully tested for creating the room temperature X-ray and gamma-ray detectors. |
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