Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The...
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
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| Цитувати: | Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1220392017-06-27T03:03:18Z Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. XX Уральская международная зимняя школа по физике полупроводников The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found. 2015 Article Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 72.80.Ey, 75.50.Pp http://dspace.nbuv.gov.ua/handle/123456789/122039 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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XX Уральская международная зимняя школа по физике полупроводников XX Уральская международная зимняя школа по физике полупроводников |
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XX Уральская международная зимняя школа по физике полупроводников XX Уральская международная зимняя школа по физике полупроводников Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese Физика низких температур |
| description |
The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found. |
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Article |
| author |
Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. |
| author_facet |
Charikova, T. Okulov, V. Gubkin, A. Lugovikh, A. Moiseev, K. Nevedomsky, V. Kudriavtsev, Yu. Gallardo, S. Lopez, M. |
| author_sort |
Charikova, T. |
| title |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_short |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_full |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_fullStr |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_full_unstemmed |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese |
| title_sort |
magnetization in aiiibv semiconductor heterostructures with the depletion layer of manganese |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2015 |
| topic_facet |
XX Уральская международная зимняя школа по физике полупроводников |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/122039 |
| citation_txt |
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ. |
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Физика низких температур |
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Low Temperature Physics/Fizika Nizkikh Temperatur, 2015, v. 41, No. 2, pp. 207–209
Magnetization in AIIIBV semiconductor heterostructures
with the depletion layer of manganese
T. Charikova, V. Okulov, A. Gubkin, and A. Lugovikh
Institute of Metal Physics RAS, Ekaterinburg, Russia
E-mail: charikova@imp.uran.ru
K. Moiseev and V. Nevedomsky
Ioffe Institute, St. Petersburg, Russia
Yu. Kudriavtsev and S. Gallardo
Departamento de Ingenieria Electrica–SEES, Cinvestav-IPN, Mexico
M. Lopez
Departamento de Fisica, Cinvestav-IPN, Mexico
Received October 20, 2014, published online December 22, 2014
The magnetic moment and magnetization in GaAs/Ga0.84In0.16As/GaAs heterostructures with Mn deluted
in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm)
in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass mag-
netization all of the samples of GaAs/Ga0.84In0.16As/GaAs with Mn increases with the increasing of the mag-
netic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer
of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic
ordering was found.
PACS: 72.80.Ey III–V and II–VI semiconductors;
75.50.Pp Magnetic semiconductors.
Keywords: magnetic semiconductors, magnetization, depletion layer of manganese.
1. Introduction
Diluted magnetic semiconductors (DMSs) on III–V based
materials have of great interest both for the researchers in
condensed matter physics and for the technologists because
of the semiconductivity-magnetism coexistence and of the
low equilibrium solubility of the transition metal [1]. DMS
heterostructures are attracting attention due to the possibil-
ity of information management using both the charge and
the spin of carriers [2,3]. Advances in epitaxial growth
technology, such as molecular beam epitaxy, have made it
possible to grow a variety of semiconductor heterostruc-
tures with atomically controlled layer thicknesses and ab-
rupt doping profiles, in which the wave function of carriers
within the artificially designed potentials may be control-
ed. Unlike the random alloy system, δ-layer of Mn in
GaAs provides the doping profile along the growth direc-
tion with the inherent advantages of δ-doping that it yelds
higher dopant carrier concentration [4]. There is a large
scatter in conductivities and Curie temperatures obtained
by different groups in Ga(Mn)As materials [5]. These dif-
ferences depend on the details of the growth and post-
growth annealing indicating the Mn quantity and the pre-
sence of compensating defects.
Unlike the random alloy system, Mn δ-layer in GaAs
provides the doping profile along the growth direction
which can be approximated by Dirac's δ-function. Inherent
advanages of δ-doping has locally higher dopant concent-
ration and higher carrier concentration. In this paper we
have presented the results of the magnetization in hetero-
structures GaAs/Ga0.84In0.16As/GaAs with Mn deluted in
GaAs cover layers and by secondary ion mass spectrosco-
py (SIMS) depth profile analyses Mn δ-layer near GaInAs-
quantum well.
© T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, and M. Lopez, 2015
T. Charikova et al.
2. Experimental details
The GaAs/InGaAs/GaAs quantum well (QW) hetero-
structures were grown on GaAs(001) substrate by MBE
method in Riber C21 chamber at temperature range of
500–600 °C [6]. Epitaxial deposition was carried out under
average rate of 0.5 m/h. The 300 nm-thick GaAs buffer
layer as a first barrier of the QW was obtained at higher
temperature (600 °C) than the layer of the GaInAs ternary
solution and the 5 nm-thick GaAs second barrier (500 °C).
The temperature decreasing was done to prevent diffusion
of indium from QW to the GaAs barrier layers. Then, the
temperature of a substrate was moving down less than
300 °C to achieve optimal conditions for an atomic Mn
layer deposition which was covered by an additional (cap)
GaAs layer as thick as 50 nm. Profile analysis of the
heterostructures containing the Mn layer was performed by
SIMS method. Measurements were carried out using ion-
microprobe ims-6f (Cameca, France). We have applied the
de-convolution procedure to experimental SIMS depth
profiles for the obtained InGaAs/GaAs single quantum
well reported elsewhere [7]. The concentration of the ele-
ment of interest was re-calculated by using the relative
sensitivity factors (RSFs) defined earlier by SIMS profiling
of implanted standards. The thicknesses of the QWs and
GaAs cover layers were examined by cross-sectional TEM.
The TEM data were used as references in examining the
de-convolution process we suggested and its application to
experimental SIMS depth profiles.
The magnetic field dependences of the magnetic moment
m(H) and mass magnetization for GaAs/Ga0.84In0.16As/
GaAs/Ga(Mn)As and GaAs/Ga0.84In0.16As/ GaAs/δ-Mn/GaAs
heterostructures have measured using SQUID-magneto-
meter MPMS of Quantum Design in the temperature range
T = 1.8–300 K and in magnetic field up to 50 kOe (Insti-
tute of Metal Physics RAS).
3. Experimental results and discussion
The magnetic field dependences of the mass magnetiza-
tion σ(H) for the structure GaAs/Ga0.84In0.16As/GaAs/
Ga(Mn)As at low temperatures is presented in Fig. 1. The
measurements were done in two magnetic field orienta-
tions parallel, along with the substrate plane, and perpen-
dicular, when the magnetic field was applied along the
growing direction. For comparison, GaAs substrate exhib-
ited a large diamagnetic response in the parallel orientation
and its mass magnetization reached σ = –2.3·10–3 emu/g in
the field H = 10 kOe. As one can see in the figure that the
field dependence of the magnetization does not exists in
the case of the perpendicular magnetic field. So there is
the anisotropy of the magnetization field dependence along
and perpendicular to the magnetic easy axis.
To extract the contribution of the Mn magnetic moments
to the total magnetization in the heterostructures with the
barrier based on the Ga(Mn)As diluted compound, we have
made several steps to distinguish the large common dia-
magnetic signal of the substrate (the thickness sd = 0.5 mm)
from the weak signal of the heterostructure ( hd = 350 nm).
The epitaxial wafers with the heterostructure on the GaAs
substrate were processed after MBE growth to remove ato-
mic indium. Then, the magnetic moment and the mass of
the samples and the substrate were measured. Next, the
contribution of the substrate from a sample mass magneti-
zation was subtracted. This procedure is also required in
order to exclude the possible contribution to the magneti-
zation of random magnetic impurities such as iron.
The extracted dependences of the mass magnetization
for the samples either with diluted GaMnAs and the GaAs
barrier locally doped with Mn δ-layer are presented in
Fig. 2. It is obvious, when the magnetic field H is applied
in the direction of the easy magnetic axis, magnetization
σ(H) for both samples increases with the increasing in
Fig. 1. (Color online) The magnetic field dependence of the mass
magnetization σ at T = 5 K for GaAs heterostructures with H
parallel to the sample plane and perpendicular to it.
Fig. 2. (Color online) The magnetic field dependence of the mass
magnetization σ at T = 5 K for GaAs heterostructures with
diluted Mn () and with Mn δ-layer (). ( )Hσ dependences
for GaAs heterostructures with diluted Mn at the temperatures
T = 5 () and T = 300 () K are presented inset.
208 Low Temperature Physics/Fizika Nizkikh Temperatur, 2015, v. 41, No. 2
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
the magnetic field. For the Ga(Mn)As sample the satura-
tion of the magnetization was found out reaching value of
46.4·10 emu/g−σ at H = 10 kOe at T = 5 K. The para-
magnetic response was observed at T = 300 K too (Fig. 2,
inset). Only weak signal of the mass magnetization was
observed for the heterostructure with the Mn δ-layer
(0.5 ML) placed into GaAs cap layer and separated from
the InGaAs quantum well by the GaAs spacer layer as
thick as 3 nm. Linear-like dependence without saturation
was reaching σ = 1.4·10–4 emu/g at H = 10 kOe. We sup-
pose that the ferromagnetism in GaAs heterostructure with
Mn δ-layer is quantitatively different even from the mag-
netic responce in the structures with the diluted Ga(Mn)As
cover layer and differ qualitatively from their bulk coun-
terparts [8]. In the dilute limit the magnetization can be
discribed by the Brillouin function [9]:
0 (Mn)= ,B xM xN g S− µ 〈 〉 (1)
where xS〈 〉 is the average spin per Mn site, 0N is a number
of cations per unit volume, g is the g factor, Bµ is the Bohr
magnetron and x is the molar fraction. Using the data of
the mass-analyzer for GaAs heterostructures with diluted
Mn 20 3
0 Mn 10 cmN N −= , the value of saturation of
magnetization at T = 5 K –46.4·10 emu/gσ , g = 2 and
5 / 2S = for Mn++ we have estimated the molar fraction of
deluted Mn in the cover layers. This value 0.002x cor-
responds the delute limit where Mn++ spins are isolated.
In magnetic field H = ±1.5 kOe the mass magnetization
shows a hysteresis loop in the structure with the diluted
Ga(Mn)As layer (Fig. 3) that indicates the ordered ferro-
magnetic structure.
4. Conclusions
It was experimentally found that ferromagnetism exist
in the magnetic quasi-two-dimensional GaAs-based hete-
rostructures doped with depletion layer of manganese at
the temperatures T = 5 and 300 K even in the dilute limit.
In the case of the heterostructures with the Mn δ-layer
(with concentration of 0.5–1.0 ML) the paramagnetic re-
sponse that can be increased using further improvements in
growth conditions of the δ-layers due to layer thickness
and Mn diffusion control to obtain more convincing evi-
dence of the spin polarization. Work in this area should
lead to sustainable results for their application in develop-
ment of modern industry.
This work was done within RAS Program (project
No. 12-P-2-1018) with partial support of RFBR (grant
No. 15-02-08909). Authors from Cinvestav thank to
SENER and CONACYT, both from Mexico for a financial
support of this study, grant No. 152244.
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Fig. 3. The magnetization hysteresis curve for GaAs/Ga(Mn)As.
The lines are presented as a guide for the eyes and triangles are
the first trip up, circles — down, squares — up once again.
Low Temperature Physics/Fizika Nizkikh Temperatur, 2015, v. 41, No. 2 209
1. Introduction
2. Experimental details
3. Experimental results and discussion
4. Conclusions
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