Activation transport under quantum Hall regime in HgTe-based heterostructure

Activation transport under quantum Hall regime in HgTe-based heterostructure

We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been...

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Bibliographic Details
Date:2017
Main Authors: Gudina, S.V., Neverov, V.N., Novik, E.G., Ilchenko, E.V., Harus, G.I., Shelushinina, N.G., Podgornykh, S.M., Yakunin, M.V., Mikhailov, N.N., Dvoretsky, S.A.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2017
Series:Физика низких температур
Subjects:
XXI Уральская международная зимняя школа по физике полупроводников
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/129428
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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http://dspace.nbuv.gov.ua/handle/123456789/129428

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