Semiconductor surfaces structurization induced by ultrasound
Gallium arsenide and silicon substrates were exposed to cavitation impact induced by focusing a high frequency acoustic wave into liquid nitrogen. Optical and atomic force microscopy methods as well as energy dispersive X-ray spectroscopy were used for analysis of the surface morphology and chemical...
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| Datum: | 2012 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2012
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| Schriftenreihe: | Functional Materials |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/134037 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Semiconductor surfaces structurization induced by ultrasound / R.K. Savkina // Functional Materials. — 2012. — Т. 19, № 1. — С. 38-43. — Бібліогр.: 18 назв. — англ. |