Semiconductor surfaces structurization induced by ultrasound
Gallium arsenide and silicon substrates were exposed to cavitation impact induced by focusing a high frequency acoustic wave into liquid nitrogen. Optical and atomic force microscopy methods as well as energy dispersive X-ray spectroscopy were used for analysis of the surface morphology and chemical...
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| Date: | 2012 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2012
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| Series: | Functional Materials |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/134037 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Semiconductor surfaces structurization induced by ultrasound / R.K. Savkina // Functional Materials. — 2012. — Т. 19, № 1. — С. 38-43. — Бібліогр.: 18 назв. — англ. |