Optical properties of silicon carbide obtained by direct ion deposition
Optical transmission, absorption and reflection spectra of silicon carbide thin films deposited on sapphire substrate from the carbon and silicon ionic flows have been investigated. The films have been obtained at various deposition paramenters, i.e., under variation of ion energy and substrate temp...
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Datum: | 2006 |
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Sprache: | English |
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НТК «Інститут монокристалів» НАН України
2006
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Schriftenreihe: | Functional Materials |
Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/135067 |
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Zitieren: | Optical properties of silicon carbide obtained by direct ion deposition / A.V. Lopin, A.V. Semenov, V.M. Puzikov, A.G. Trushkovsky // Functional Materials. — 2006. — Т. 13, № 4. — С. 631-636. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1350672018-06-15T03:07:44Z Optical properties of silicon carbide obtained by direct ion deposition Lopin, A.V. Semenov, A.V. Puzikov, V.M. Trushkovsky, A.G. Optical transmission, absorption and reflection spectra of silicon carbide thin films deposited on sapphire substrate from the carbon and silicon ionic flows have been investigated. The films have been obtained at various deposition paramenters, i.e., under variation of ion energy and substrate temperature. The behavior of optical characteristics of silicon-carbide films depending on influence of changes in technological parameters. It has been shown that direct ion deposition method provides a control of film optical parameters within a wide range. 2006 Article Optical properties of silicon carbide obtained by direct ion deposition / A.V. Lopin, A.V. Semenov, V.M. Puzikov, A.G. Trushkovsky // Functional Materials. — 2006. — Т. 13, № 4. — С. 631-636. — Бібліогр.: 9 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135067 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
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Optical transmission, absorption and reflection spectra of silicon carbide thin films deposited on sapphire substrate from the carbon and silicon ionic flows have been investigated. The films have been obtained at various deposition paramenters, i.e., under variation of ion energy and substrate temperature. The behavior of optical characteristics of silicon-carbide films depending on influence of changes in technological parameters. It has been shown that direct ion deposition method provides a control of film optical parameters within a wide range. |
format |
Article |
author |
Lopin, A.V. Semenov, A.V. Puzikov, V.M. Trushkovsky, A.G. |
spellingShingle |
Lopin, A.V. Semenov, A.V. Puzikov, V.M. Trushkovsky, A.G. Optical properties of silicon carbide obtained by direct ion deposition Functional Materials |
author_facet |
Lopin, A.V. Semenov, A.V. Puzikov, V.M. Trushkovsky, A.G. |
author_sort |
Lopin, A.V. |
title |
Optical properties of silicon carbide obtained by direct ion deposition |
title_short |
Optical properties of silicon carbide obtained by direct ion deposition |
title_full |
Optical properties of silicon carbide obtained by direct ion deposition |
title_fullStr |
Optical properties of silicon carbide obtained by direct ion deposition |
title_full_unstemmed |
Optical properties of silicon carbide obtained by direct ion deposition |
title_sort |
optical properties of silicon carbide obtained by direct ion deposition |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2006 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/135067 |
citation_txt |
Optical properties of silicon carbide obtained by direct ion deposition / A.V. Lopin, A.V. Semenov, V.M. Puzikov, A.G. Trushkovsky // Functional Materials. — 2006. — Т. 13, № 4. — С. 631-636. — Бібліогр.: 9 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT lopinav opticalpropertiesofsiliconcarbideobtainedbydirectiondeposition AT semenovav opticalpropertiesofsiliconcarbideobtainedbydirectiondeposition AT puzikovvm opticalpropertiesofsiliconcarbideobtainedbydirectiondeposition AT trushkovskyag opticalpropertiesofsiliconcarbideobtainedbydirectiondeposition |
first_indexed |
2025-07-09T22:38:22Z |
last_indexed |
2025-07-09T22:38:22Z |
_version_ |
1837210746121879552 |