Radiological characterization of metal oxide semiconductor field effect transistor dosimeter
This paper reports our effort to develop a detailed 3D Monte Carlo simulation model of the High-Sensitivity MOSFET dosimeter using the MCNP 4C code for radiological charac -terization. To determine the dosimeter response accurately, this study has taken three actions: (1) The absorbed dose to the se...
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| Datum: | 2004 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/135238 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiological characterization of metal oxide semiconductor field effect transistor dosimeter / Chan-Hyeong Kim, Sang-Hoon Lee, Baodong Wang, X.George Xu // Functional Materials. — 2004. — Т. 11, № 1. — С. 183-185. — Бібліогр.: 4 назв. — англ. |