The aggregation of point defetc in dislocation-free silicon single crystals
The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines the process of grown-in microdefects formation. Decomposition of oversatura...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2007
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/136429 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The aggregation of point defetc in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, A.A. Voronin, A.V. Sirota // Functional Materials. — 2007. — Т. 14, № 1. — С. 48-52. — Бібліогр.: 14 назв. — англ. |