Dominant point defects in doped cadmium telluride CdTe:Ge
Quasi-chemical equations have been proposed for the formation of point defects (PD) and complexes thereof in germanium-doped cadmium telluride single crystals. Baric and temperature dependences of dominant PD and free charge carriers concentrations in CdTe:Ge have been obtained. Equilibrium constant...
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| Datum: | 2007 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2007
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/136487 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dominant point defects in doped cadmium telluride CdTe:Ge / D.M. Freik, U.M. Pysklynets, L.Y. Mezhylovska // Functional Materials. — 2007. — Т. 14, № 2. — С. 181-186. — Бібліогр.: 12 назв. — англ. |