Absorption edge of nanocrystalline cubic silicon carbide films

The optical absorption edge of nanocrystalline films of cubic silicon carbide polytype (nc-SlC) obtained by direct ion deposition have been studied using optical spectroscopy. Within the 1.12-6.5 eV, three optical absorption regions have been found with different (exponential, power, and oscillating...

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Bibliographic Details
Date:2009
Main Authors: Lopin, A.V., Semenov, A.V., Puzikov, V.M., Skorik, S.N.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2009
Series:Functional Materials
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/136626
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Absorption edge of nanocrystalline cubic silicon carbide films // A.V. Lopin, A.V. Semenov, V.M. Puzikov, S.N. Skorik // Functional Materials. — 2009. — Т. 16, № 1. — С. 36-40. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The optical absorption edge of nanocrystalline films of cubic silicon carbide polytype (nc-SlC) obtained by direct ion deposition have been studied using optical spectroscopy. Within the 1.12-6.5 eV, three optical absorption regions have been found with different (exponential, power, and oscillating) dependences of the film absorption coefficient on the photon energy. Basing on the proposed structure model, the spectral dependence of absorption coefficient has been related to the defect states of nc-SlC, to direct and indirect optical interband transitions, and with dimensional quantization effects.