Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and...
Gespeichert in:
Datum: | 2007 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | English |
Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2007
|
Schriftenreihe: | Functional Materials |
Schlagworte: | |
Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/136922 |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraineid |
irk-123456789-136922 |
---|---|
record_format |
dspace |
fulltext |
|
spelling |
irk-123456789-1369222018-06-17T03:11:20Z Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. Characterization and properties The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed. 2007 Article Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136922 en Functional Materials НТК «Інститут монокристалів» НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
topic |
Characterization and properties Characterization and properties |
spellingShingle |
Characterization and properties Characterization and properties Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers Functional Materials |
description |
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed. |
format |
Article |
author |
Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. |
author_facet |
Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. |
author_sort |
Druzhinin, A.A. |
title |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
title_short |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
title_full |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
title_fullStr |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
title_full_unstemmed |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers |
title_sort |
magnetoresistance and magnetic susceptibility of doped si-ge whiskers |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2007 |
topic_facet |
Characterization and properties |
url |
http://dspace.nbuv.gov.ua/handle/123456789/136922 |
citation_txt |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT druzhininaa magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers AT ostrovskiiip magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers AT kogutyur magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers AT warchulskajk magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers |
first_indexed |
2025-07-10T03:02:20Z |
last_indexed |
2025-07-10T03:02:20Z |
_version_ |
1837227354788724736 |