Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers

The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Datum:2007
Hauptverfasser: Druzhinin, A.A., Ostrovskii, I.P., Kogut, Yu.R., Warchulska, J.K.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2007
Schriftenreihe:Functional Materials
Schlagworte:
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/136922
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-136922
record_format dspace
fulltext
spelling irk-123456789-1369222018-06-17T03:11:20Z Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers Druzhinin, A.A. Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. Characterization and properties The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed. 2007 Article Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136922 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Characterization and properties
Characterization and properties
spellingShingle Characterization and properties
Characterization and properties
Druzhinin, A.A.
Ostrovskii, I.P.
Kogut, Yu.R.
Warchulska, J.K.
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
Functional Materials
description The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed.
format Article
author Druzhinin, A.A.
Ostrovskii, I.P.
Kogut, Yu.R.
Warchulska, J.K.
author_facet Druzhinin, A.A.
Ostrovskii, I.P.
Kogut, Yu.R.
Warchulska, J.K.
author_sort Druzhinin, A.A.
title Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_short Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_full Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_fullStr Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_full_unstemmed Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
title_sort magnetoresistance and magnetic susceptibility of doped si-ge whiskers
publisher НТК «Інститут монокристалів» НАН України
publishDate 2007
topic_facet Characterization and properties
url http://dspace.nbuv.gov.ua/handle/123456789/136922
citation_txt Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.
series Functional Materials
work_keys_str_mv AT druzhininaa magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers
AT ostrovskiiip magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers
AT kogutyur magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers
AT warchulskajk magnetoresistanceandmagneticsusceptibilityofdopedsigewhiskers
first_indexed 2025-07-10T03:02:20Z
last_indexed 2025-07-10T03:02:20Z
_version_ 1837227354788724736