Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2007
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| Schriftenreihe: | Functional Materials |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/136922 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ. |