X-ray photoelectron spectroscopy of the interface formation on cleavage surfaces of the layered semiconductor In₄Se₃ crystals
The results of X-ray photoelectron spectroscopy of the phase interface formation on the cleavage surfaces of layered semiconductor In₄Se₃, In₄Se₃(Cu) crystals are presented. The peculiarities of the process in the high-vacuum chamber atmosphere have been studied using the Auger electron spectroscopy...
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| Datum: | 2005 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/137680 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | X-ray photoelectron spectroscopy of the interface formation on cleavage surfaces of the layered semiconductor In₄Se₃ crystals / P.V. Galiy, A.V. Musyanovych // Functional Materials. — 2005. — Т. 12, № 3. — С. 467-475. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The results of X-ray photoelectron spectroscopy of the phase interface formation on the cleavage surfaces of layered semiconductor In₄Se₃, In₄Se₃(Cu) crystals are presented. The peculiarities of the process in the high-vacuum chamber atmosphere have been studied using the Auger electron spectroscopy. The carbon and oxygen interface coatings are formed due to interaction of the air with atomically clean cleavage surfaces of the crystals pure In₄Se₃ and In₄Se₃(Cu) crystals. |
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