X-ray photoelectron spectroscopy of the interface formation on cleavage surfaces of the layered semiconductor In₄Se₃ crystals
The results of X-ray photoelectron spectroscopy of the phase interface formation on the cleavage surfaces of layered semiconductor In₄Se₃, In₄Se₃(Cu) crystals are presented. The peculiarities of the process in the high-vacuum chamber atmosphere have been studied using the Auger electron spectroscopy...
Gespeichert in:
| Datum: | 2005 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
|
| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/137680 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | X-ray photoelectron spectroscopy of the interface formation on cleavage surfaces of the layered semiconductor In₄Se₃ crystals / P.V. Galiy, A.V. Musyanovych // Functional Materials. — 2005. — Т. 12, № 3. — С. 467-475. — Бібліогр.: 19 назв. — англ. |