Chemical etching of CdTe, CdₓHg₁-ₓTe, ZnₓCd₁-ₓTe and Te in the HNO₃-HCl-citric acid
The peculiarities of CdТе, CdTe, CdₓHg₁-ₓTe, ZnₓCd₁-ₓTe and Те single crystals dissolution in the solutions of HN0₃-HCl-citric acid system are investigated and the surfaces of equal etching rates (Gibbs diagrams) are constructed. The limiting stages of dissolution process and regions of polishing so...
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| Date: | 2005 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2005
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/137710 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Chemical etching of CdTe, CdₓHg₁-ₓTe, ZnₓCd₁-ₓTe and Te in the HNO₃-HCl-citric acid / Z.F. Tomashik, Ye.O. Bilevych, P.I. Feichuk, V.M. Tomashik // Functional Materials. — 2005. — Т. 12, № 2. — С. 396-400. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The peculiarities of CdТе, CdTe, CdₓHg₁-ₓTe, ZnₓCd₁-ₓTe and Те single crystals dissolution in the solutions of HN0₃-HCl-citric acid system are investigated and the surfaces of equal etching rates (Gibbs diagrams) are constructed. The limiting stages of dissolution process and regions of polishing solutions for these semiconductors are determined. Increasing of
ZnТе contents in the Cd₁-ₓZnₓТе solid solutions has been shown to result in a linear increasing of dissolution rate. |
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