Photoelectric memory in 6H-SiC
In the investigated structures, the phenomenon of photoelectric memory is observed connected with the increase of a dark current by about 3 decimal orders and retained for a long time after the structure illumination with light of E = 3 eV energy at T = 300 K. The current-voltage characteristic is I...
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| Datum: | 2004 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/138804 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoelectric memory in 6H-SiC / M. Duisenbaev // Functional Materials. — 2004. — Т. 11, № 2. — С. 372-375. — Бібліогр.: 13 назв. — англ. |