Radiation influence on characteristics of GaP light emitting diodes
The capacitance properties of GaP green and red LEDs have been studied. It was found the character of a doping impurity distribution in the depleted region and the junction depth dependence on bias voltage and impurity concentration in the low-doped part of the p-n junction have been established. Th...
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| Date: | 2009 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2009
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| Series: | Functional Materials |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/138911 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Radiation influence on characteristics of GaP light emitting diodes // A. Borzakovskyj, O. Gontaruk, V. Kochkin, P. Litovchenko, V. Opilat, I. Petrenko, V. Tartachnyk // Functional Materials. — 2009. — Т. 16, № 3. — С. 313-318. — Бібліогр.: 20 назв. — англ. |