Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique
The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been...
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Date: | 2005 |
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Main Authors: | , |
Format: | Article |
Language: | English |
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НТК «Інститут монокристалів» НАН України
2005
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Series: | Functional Materials |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/138949 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ. |
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