Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique

The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been...

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Bibliographic Details
Date:2005
Main Authors: Kozhemyakin, G.N., Ruban, R.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2005
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/138949
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine