Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline
An electric junction between porous silicon (n-type conductivity) and conductive polyaniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying І-V characteristics. Under illuminati...
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| Date: | 2005 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2005
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/139307 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline / P. Stakhira, E. Aksimentieva, Z. Mykytyuk, V. Cherpak // Functional Materials. — 2005. — Т. 12, № 4. — С. 807-809. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | An electric junction between porous silicon (n-type conductivity) and conductive polyaniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying І-V characteristics. Under illumination, a considerable increase of the current is observed with a reverse bias. The structure photosensitivity is defined mainly by two barriers, namely, by the polymer/porous silicon interphase and the porous silicon/crystalline silicon barrier. |
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