Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline

An electric junction between porous silicon (n-type conductivity) and conductive polyaniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying І-V characteristics. Under illuminati...

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Datum:	2005
Hauptverfasser:	Stakhira, P., Aksimentieva, E., Mykytyuk, Z., Cherpak, V.
Format:	Artikel
Sprache:	English
Veröffentlicht:	НТК «Інститут монокристалів» НАН України 2005
Schriftenreihe:	Functional Materials
Online Zugang:	http://dspace.nbuv.gov.ua/handle/123456789/139307
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Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline / P. Stakhira, E. Aksimentieva, Z. Mykytyuk, V. Cherpak // Functional Materials. — 2005. — Т. 12, № 4. — С. 807-809. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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spelling	irk-123456789-1393072018-06-21T03:07:25Z Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline Stakhira, P. Aksimentieva, E. Mykytyuk, Z. Cherpak, V. An electric junction between porous silicon (n-type conductivity) and conductive polyaniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying І-V characteristics. Under illumination, a considerable increase of the current is observed with a reverse bias. The structure photosensitivity is defined mainly by two barriers, namely, by the polymer/porous silicon interphase and the porous silicon/crystalline silicon barrier. Электрический контакт между пористым кремнием с n-типа проводимостью и проводящим полианилином с проводимостью p-типа изготовлен путем электрохимической полимеризации анилина на поверхности пористого кремния. Найдено, что такая гетероструктура демонстрирует выпрямляющие І-V характеристики. При освещении наблюдалось значительное повышение тока при обратном смещении. Фоточувствительность структуры преимущественно определяется двумя барьерами: интерфазой полимер-пористый кремний и пористый кремний-монокристаллический кремний. Електричний контакт мiж поруватим кремнiєм з n-типу провiднiстю i електропровiдним полiмером - полiанiлiном з провiднiстю p-типу створено шляхом електрохiмiчної полiмеризацiї анiлiну на поверхнi поруватого кремнiю. 3найдено, що така гетероструктура демонструє випрямляючi І-V характеристики. При освiтленнi спостерiгалося значне пiдвищення струму при зворотному змiщеннi. Фоточутливiсть структури переважно визначається двома бар'єрами: iнтерфазою полiмер-поруватий кремнiй та поруватий кремнiй-монокристалiчний кремнiй. 2005 Article Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline / P. Stakhira, E. Aksimentieva, Z. Mykytyuk, V. Cherpak // Functional Materials. — 2005. — Т. 12, № 4. — С. 807-809. — Бібліогр.: 8 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/139307 en Functional Materials НТК «Інститут монокристалів» НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
description	An electric junction between porous silicon (n-type conductivity) and conductive polyaniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying І-V characteristics. Under illumination, a considerable increase of the current is observed with a reverse bias. The structure photosensitivity is defined mainly by two barriers, namely, by the polymer/porous silicon interphase and the porous silicon/crystalline silicon barrier.
format	Article
author	Stakhira, P. Aksimentieva, E. Mykytyuk, Z. Cherpak, V.
spellingShingle	Stakhira, P. Aksimentieva, E. Mykytyuk, Z. Cherpak, V. Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline Functional Materials
author_facet	Stakhira, P. Aksimentieva, E. Mykytyuk, Z. Cherpak, V.
author_sort	Stakhira, P.
title	Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline
title_short	Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline
title_full	Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline
title_fullStr	Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline
title_full_unstemmed	Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline
title_sort	photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline
publisher	НТК «Інститут монокристалів» НАН України
publishDate	2005
url	http://dspace.nbuv.gov.ua/handle/123456789/139307
citation_txt	Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline / P. Stakhira, E. Aksimentieva, Z. Mykytyuk, V. Cherpak // Functional Materials. — 2005. — Т. 12, № 4. — С. 807-809. — Бібліогр.: 8 назв. — англ.
series	Functional Materials
work_keys_str_mv	AT stakhirap photovoltaicpropertiesofaheterostructureonthebasisofporoussiliconandpolyaniline AT aksimentievae photovoltaicpropertiesofaheterostructureonthebasisofporoussiliconandpolyaniline AT mykytyukz photovoltaicpropertiesofaheterostructureonthebasisofporoussiliconandpolyaniline AT cherpakv photovoltaicpropertiesofaheterostructureonthebasisofporoussiliconandpolyaniline
first_indexed	2025-07-10T07:55:19Z
last_indexed	2025-07-10T07:55:19Z
_version_	1837245794032287744
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Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline

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