Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates
The epitaxial layers of Pb₁-ₓSnₓTe₁-ᵧSeᵧ quaternary solid solution (thickness of 2 to 11 µm, Nd ≤ 10⁵ сm⁻², n(p) = (0.9 to 8.7)·10¹⁷ сm⁻³ and µₕ = (0.1 to 24)·10³ сm²·V⁻¹·s⁻¹ at T - 80 К), lattice-matched with KCI, BaF₂, Рb₀.₈₀Sn₀.₂₀Те, and РbТе₀.₉₂Sе₀.₀₈ substrates, were grown in a wide compositio...
Gespeichert in:
| Datum: | 2005 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
|
| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/139315 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates / O.N. Tsarenko, S.I. Ryabets, A.I. Tkachuk // Functional Materials. — 2005. — Т. 12, № 3. — С. 526-530. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSchreiben Sie den ersten Kommentar!