Influence of impurity on electronic transition in coherent-strained quantum dot
The influence of impurity on energy breadth of an optical gap for quantum dot is studied within the framework of deformation potential model. It is established that with size increase of a quantum dot with an ionization donor dopant an optical gap diminishes. For smaller radiuses (R₀ ~ 40 Å ÷...
Збережено в:
| Дата: | 2006 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2006
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139493 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of impurity on electronic transition in coherent-strained quantum dot / O.O. Dan'kiv, R.M. Peleshchak // Functional Materials. — 2006. — Т. 13, № 1. — С. 14-20. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The influence of impurity on energy breadth of an optical gap for quantum dot is studied within the framework of deformation potential model. It is established that with size increase of a quantum dot with an ionization donor dopant an optical gap diminishes.
For smaller radiuses (R₀ ~ 40 Å ÷ 57 Å) energy breadth of the basic optical transition Е in quantum dots with donor dopants is greater, than in unblended ones. For the major sizes of quantum dots R₀ ≥ 58 Å the converse effect is observed. |
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