Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals
Experiments on local high-intensity electric current pulse action on mechanical properties of a Si filamentary crystal made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations.
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| Datum: | 2004 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/139568 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals / A.P. Ermakov, B.M. Darinsky, A.I. Drozhzhin // Functional Materials. — 2004. — Т. 11, № 4. — С. 746-750. — Бібліогр.: 15 назв. — англ. |