Recombination parameters of point defects in dislocation-free silicon single crystals
The recombination parameters of the point defects dynamics (recombination barrier, recombination time, recombination factor) at high and low temperatures are discussed proceeding from the heterogeneous mechanism of grown-in microdefects formation and transformation. The cooling-induced decomposition...
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| Date: | 2006 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2006
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/139612 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Recombination parameters of point defects in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin // Functional Materials. — 2006. — Т. 13, № 1. — С. 69-73. — Бібліогр.: 25 назв. — англ. |