Specific features of photoluminescence centers in CsBr:Eu²⁺ crystals grown from melt

Specific formation features of isolated dipole centers (IDC) Eu²⁺-Vcs (impurity-cationic vacancy) and aggregate centers (AC) of photoluminescence (PL) in CsBr:Eu2+ crystals have been studied. These centers provide the PL with maxima in 435-450 nm and 490-520 nm regions. The centers causing the PL pe...

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Збережено в:
Бібліографічні деталі
Дата:2004
Автори: Zorenko, Yu.V., Turchak, R.M., Konstankevich, I.V.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2004
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/139678
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Specific features of photoluminescence centers in CsBr:Eu²⁺ crystals grown from melt / Yu.V. Zorenko, R.M. Turchak, I.V. Konstankevich // Functional Materials. — 2004. — Т. 11, № 4. — С. 707-709. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:Specific formation features of isolated dipole centers (IDC) Eu²⁺-Vcs (impurity-cationic vacancy) and aggregate centers (AC) of photoluminescence (PL) in CsBr:Eu2+ crystals have been studied. These centers provide the PL with maxima in 435-450 nm and 490-520 nm regions. The centers causing the PL peaked at 490-520 nm have been found to be formed within a narrow Eu²⁺ concentration range (0.01 to 0.1 mol.%) and at temperatures up to 180-200°C. It has been supposed that in the CsBr:Eu²⁺ crystals, besides of the IDC responsible for the PL peaked at 440 nm, several AC types can be observed, in particular, CsEuBr₃ and Cs₄EuBr₆ nanocrystals as well as EuBr₂ precipitates.