Structure changes in nickel on silicon nano-layers under vacuum ultraviolet irradiation
The structure changes in nickel-on-silicon systems due to vacuum ultraviolet irradiation (VUV) have been studied using the X-ray reflectometry. An ultra-thin (1 to 2 nm) layer (of the density ρ = 3.2 to 3.4 g/cm³ at VUV wavelength λ = 120 nm and 2.1 to 2.6 g/cm³ at λ = 180 nm) has been revealed...
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| Datum: | 2006 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2006
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/139961 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structure changes in nickel on silicon nano-layers under vacuum ultraviolet irradiation / I.F. Mikhailov, S.S. Borisova, L.P. Fomina, S.V. Malykhin, I.N. Babenko // Functional Materials. — 2006. — Т. 13, № 1. — С. 85-89. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The structure changes in nickel-on-silicon systems due to vacuum ultraviolet irradiation (VUV) have been studied using the X-ray reflectometry. An ultra-thin (1 to 2 nm) layer (of the density ρ = 3.2 to 3.4 g/cm³ at VUV wavelength λ = 120 nm and 2.1 to
2.6 g/cm³ at λ = 180 nm) has been revealed to be formed at the nickel film surface under irradiation. The nickel films themselves remain unchanged both in thickness and density after a short-time VUV irradiation. It has been supposed that the surface layer formation is a result of the VUV interaction with the silicon substrate, silicon nitride Si₃N₄ being formed at λ = 120 nm while oxide SiOₓ at λ = 180 nm. |
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