Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness

A detailed XRD analysis of AlN/GaN multiple quantum well (MQW) structures grown on AlN(0001) substrates is proposed. The effect of roughness on the 2θ-ω scans measured in Bragg diffraction for symmetrical reflections is investigated together with the effect of depth variation of the well and barrier...

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Datum:2018
Hauptverfasser: Liubchenko, O.I., Kladko, V.P.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут металофізики ім. Г.В. Курдюмова НАН України 2018
Schriftenreihe:Металлофизика и новейшие технологии
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Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/146953
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness / O.I. Liubchenko, V.P. Kladko // Металлофизика и новейшие технологии. — 2018. — Т. 40, № 6. — С. 759-776. — Бібліогр.: 38 назв. — англ.

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