Determination of oscillator strength of confined excitons in a semiconductor microcavity

We have achieved a significant experimental Rabi-splitting (3.4 meV) for confined polaritons in a planar semiconductor λ microcavity for only a single quantum well (SQW) of GaAs (10~nm) placed at the antinode. The Rabi-splitting phenomena are discussed in detail based on the semiclassical theory, wh...

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Datum:2014
Hauptverfasser: Cotta, E.A., Roma, P.M.S.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики конденсованих систем НАН України 2014
Schriftenreihe:Condensed Matter Physics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/153452
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Determination of oscillator strength of confined excitons in a semiconductor microcavity / E.A. Cotta, P.M.S. Roma // Condensed Matter Physics. — 2014. — Т. 17, № 2. — С. 23702:1-11. — Бібліогр.: 30 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:We have achieved a significant experimental Rabi-splitting (3.4 meV) for confined polaritons in a planar semiconductor λ microcavity for only a single quantum well (SQW) of GaAs (10~nm) placed at the antinode. The Rabi-splitting phenomena are discussed in detail based on the semiclassical theory, where two coupled harmonic oscillators (excitons and photons) are used to describe the system. In this way, we can obtain the dispersion curve of polaritons, the minimum value for the cavity reflectance and the oscillator strength to reach the strong coupling regime. This approach describes an ensemble of excitons confined in a SQW and includes a dissipation component. The results present a weak coupling regime, where an enhanced spontaneous emission takes place, and a strong coupling regime, where Rabi-splitting in the dispersion curve can be observed. The theoretical results are confronted with experimental data for the reflectance behavior in resonant and off-resonant conditions and present a great accuracy. This allows us to determine the oscillator strength of the confined excitons in the SQW with great precision.