Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation
The electronic property of NiFe₂O₄ nanowire device is investigated through nonequilibrium Green’s functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe₂O₄ nanowire are studied in terms of density of states, transmission spectrum and I–V c...
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| Date: | 2017 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
2017
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| Series: | Condensed Matter Physics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/156991 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation / V. Nagarajan, R. Chandiramouli // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23301: 1–12. — Бібліогр.: 65 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The electronic property of NiFe₂O₄ nanowire device is investigated through nonequilibrium Green’s functions
(NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe₂O₄
nanowire are studied in terms of density of states, transmission spectrum and I–V characteristics. The density
of states gets modified with the applied bias voltage across NiFe₂O₄ nanowire device, the density of charge is
observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe₂O₄ nanowire device gives the insights on the transition of electrons at different energy
intervals. The findings of the present work suggest that NiFe₂O₄ nanowire device can be used as negative differential resistance (NDR) device and its NDR property can be tuned with the bias voltage, which may be used
in microwave device, memory devices and in fast switching devices. |
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