Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation

The structural stability, electronic properties and NH₃ adsorption properties of pristine, Ti, Zr and F substituted α-MoO₃ nanostructures are successfully studied using density functional theory with B3LYP/LanL2DZ basis set. The structural stability of α-MoO₃ nanostructures is discussed in terms o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Datum:2017
Hauptverfasser: Nagarajan, V., Chandiramouli, R.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики конденсованих систем НАН України 2017
Schriftenreihe:Condensed Matter Physics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/156999
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation / V. Nagarajan, R. Chandiramouli // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23705: 1–16. — Бібліогр.: 58 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-156999
record_format dspace
spelling irk-123456789-1569992019-06-20T01:27:58Z Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation Nagarajan, V. Chandiramouli, R. The structural stability, electronic properties and NH₃ adsorption properties of pristine, Ti, Zr and F substituted α-MoO₃ nanostructures are successfully studied using density functional theory with B3LYP/LanL2DZ basis set. The structural stability of α-MoO₃ nanostructures is discussed in terms of formation energy. The electronic properties of pristine, Ti, Zr and F incorporated α-MoO₃ nanostructures are discussed in terms of HOMO-LUMO gap, ionization potential and electron affinity. α-MoO₃ nanostructures can be fine-tuned with suitable substitution impurity to improve the adsorption characteristics of ammonia, which can be used to detect NH3 in a mixed environment. The present work gives an insight into tailoring α-MoO₃ nanostructures for NH₃ detection. Структурна стiйкiсть, електроннi властивостi i NH₃ адсорбцiйнi властивостi первинних, Ti, Zr i F замiщених α-MoO₃ наноструктур успiшно вивченi, використовуючи теорiю функцiоналу густини з B3LYP/ LanL2DZ базисним набором. Структурна стiйкiсть α-MoO₃ наноструктур обговорюється в термiнах енергiї утворювання. Електроннi властивостi первинних, Ti, Zr i F iнкорпорованих α-MoO₃ наноструктур обговорюються в термiнах HOMO-LUMO щiлини, потенцiалу iонiзацiї та електронної афiнностi. α-MoO₃ наноструктури можуть бути точно-регульованi за допомогою пiдходящої домiшки замiщення для покращення адсорбцiйних властивостей амонiяку, що може бути використано для виявлення NH₃ в змiшаному середовищi. Дана робота дає розумiння про застосування α-MoO₃ наноструктур для виявлення NH₃. 2017 Article Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation / V. Nagarajan, R. Chandiramouli // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23705: 1–16. — Бібліогр.: 58 назв. — англ. 1607-324X PACS: 71.15.Mb DOI:10.5488/CMP.20.23705 arXiv:1706.07305 http://dspace.nbuv.gov.ua/handle/123456789/156999 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The structural stability, electronic properties and NH₃ adsorption properties of pristine, Ti, Zr and F substituted α-MoO₃ nanostructures are successfully studied using density functional theory with B3LYP/LanL2DZ basis set. The structural stability of α-MoO₃ nanostructures is discussed in terms of formation energy. The electronic properties of pristine, Ti, Zr and F incorporated α-MoO₃ nanostructures are discussed in terms of HOMO-LUMO gap, ionization potential and electron affinity. α-MoO₃ nanostructures can be fine-tuned with suitable substitution impurity to improve the adsorption characteristics of ammonia, which can be used to detect NH3 in a mixed environment. The present work gives an insight into tailoring α-MoO₃ nanostructures for NH₃ detection.
format Article
author Nagarajan, V.
Chandiramouli, R.
spellingShingle Nagarajan, V.
Chandiramouli, R.
Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation
Condensed Matter Physics
author_facet Nagarajan, V.
Chandiramouli, R.
author_sort Nagarajan, V.
title Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation
title_short Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation
title_full Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation
title_fullStr Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation
title_full_unstemmed Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation
title_sort interaction of nh₃ gas on α-moo₃ nanostructures — a dft investigation
publisher Інститут фізики конденсованих систем НАН України
publishDate 2017
url http://dspace.nbuv.gov.ua/handle/123456789/156999
citation_txt Interaction of NH₃ gas on α-MoO₃ nanostructures — a DFT investigation / V. Nagarajan, R. Chandiramouli // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23705: 1–16. — Бібліогр.: 58 назв. — англ.
series Condensed Matter Physics
work_keys_str_mv AT nagarajanv interactionofnh3gasonamoo3nanostructuresadftinvestigation
AT chandiramoulir interactionofnh3gasonamoo3nanostructuresadftinvestigation
first_indexed 2025-07-14T09:20:56Z
last_indexed 2025-07-14T09:20:56Z
_version_ 1837613560852643840
fulltext Condensed Matter Physics, 2017, Vol. 20, No 2, 23705: 1–16 DOI: 10.5488/CMP.20.23705 http://www.icmp.lviv.ua/journal Interaction of NH3 gas on α-MoO3 nanostructures— a DFT investigation V. Nagarajan, R. Chandiramouli∗ School of Electrical and Electronics Engineering, Shanmugha Arts Science Technology and Research Academy (SASTRA) University, Tirumalaisamudram, Thanjavur, Tamil nadu— 613 401, India Received February 21, 2017, in final form April 18, 2017 The structural stability, electronic properties and NH3 adsorption properties of pristine, Ti, Zr and F substituted α-MoO3 nanostructures are successfully studied using density functional theory with B3LYP/LanL2DZ basis set.The structural stability of α-MoO3 nanostructures is discussed in terms of formation energy. The electronicproperties of pristine, Ti, Zr and F incorporated α-MoO3 nanostructures are discussed in terms of HOMO-LUMOgap, ionization potential and electron affinity. α-MoO3 nanostructures can be fine-tuned with suitable substi-tution impurity to improve the adsorption characteristics of ammonia, which can be used to detect NH3 in amixed environment. The present work gives an insight into tailoring α-MoO3 nanostructures for NH3 detection. Key words: nanostructure, adsorption, NH3, HOMO-LUMO gap, MoO3 PACS: 71.15.Mb 1. Introduction Ammonia (NH3) is widely used in automobiles, food industry and agriculture in the form of fuel, antimicrobial agent and fertilizers [1]. The detection of NH3 is a significant criterion due to its hazard. The exposure limit of ammonia is around 25 ppm, which is recommended by Occupational Safety and Health Administration (OSHA) [2]. There are several analytical techniques adopted to detect ammo- nia gas, which include the laser methods [3], electrochemical methods, optical methods [4] and mass spectrometry [5]. These techniques are time-consuming and also need sophisticated instruments. In this context, an inexpensive and real-time sensor is required to detect trace the amounts of ammonia at ppm level. Metal oxide semiconductor (MOS) thin films are extensively used for gas sensors as their resistivity changes upon interaction with toxic gas molecules [6, 7]. Moreover, MOS sensors are easy to fabricate, low cost and are uniform in performance among other types of gas sensors. Besides, the morphology such as rods, belts and wires in the micro-dimension and nano-dimension show a significant performance in MOS sensors. Furthermore, these types of nanostructured materials offer high surface-to-volume ratio, which leads to an enhanced performance in gas sensing [8–10]. Among various metal oxide semiconductors, molybdenum oxide (MoO3) is an excellent candidate for electrochromic, catalytic and gas sensing applications. MoO3 is n-type semiconductor with a wide band gap; the conductivity arises due to oxygen vacancies. The band gap of MoO3 is found to be around 2.69–2.76 eV [11]. MoO3 is also used as catalyst for the reduction of NOx in the petroleum and chemical industry and oxidation of hydrocarbons [12–15].Moreover, there are reports for enhancing the gas sensing properties of molybdenum oxide based device to detect LPG [16], CO [17, 18], NH3 [13, 16, 19], H2 [16, 17]. Furthermore, the synthesis of MoO3 includes thermal evaporation [20], pulsed laser deposition [13], sol-gel [1, 21], electro-deposition [22] and chemical vapor deposition [23, 24]. MoO3 exhibits in three polymorphic phases [25] namely stable orthorhombic α-MoO3, meta-stable monoclinic β-MoO3, hexagonal β-MoO3. Kannan et al. [26] have reported the influence of the precursor ∗Corresponding author This work is licensed under a Creative Commons Attribution 4.0 International License . Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. 23705-1 https://doi.org/10.5488/CMP.20.23705 http://www.icmp.lviv.ua/journal http://creativecommons.org/licenses/by/4.0/ V. Nagarajan, R. Chandiramouli solution volume on the properties of spray deposited α-MoO3 thin films. Martinez et al. [27] have studied the gas sensing properties of spray deposited MoO3 thin films. Hussain et al. [28] have reported activated reactive evaporated MoO3 thin films for gas sensor applications and they observed that α- MoO3 are capable of sensing both CO and NH3 gases at below 10 ppm of concentration in dry air. Density functional theory (DFT) is an efficient method for studying the interaction between compounds and adsorption characteristics of compounds [29–31]. Based on these aspects, literature survey was conducted using CrossRef metadata search and it is inferred that not much work was reported based on DFTmethods to investigate the adsorption properties of NH3 on α-MoO3 nanostructures. The motivation behind the present work is to improve the NH3 adsorption properties on α-MoO3 nanostructures with the incorporation of dopants. The novel aspect of this work is to study the adsorption characteristics of NH3 on α-MoO3 nanostructures with the substitution of Ti, Zr and F as substitution impurities. 2. Computational methods In the present work, Gaussian 09 package [32] is used to optimize the pristine, Ti, Zr and F substituted α-MoO3 nanostructures. This package is also used to investigate the adsorption properties of NH3 gas molecules on α-MoO3 base material. The calculations were carried out for isolated MoO3 base material with periodic boundary condition (PBC). Moreover, the atoms were fixed along the direction perpendicular to the molecular plane and allowed us to relax along the other planes. In the present work, DFT is utilized in accordance with Becke’s three-parameter hybrid functional in combination with Lee-Yang-Parr correlation functional (B3LYP)/LanL2DZ basis set [33–36]. The selection of a suitable basis set is an important criterion for optimizing α-MoO3 nanostructures. In our previous study we demonstrated a density functional theory with the use of all-electron basis sets, but methods including effective core potentials (ECPs) are good in reducing the computational cost. Furthermore, the efforts have been taken into account for measuring the performance of basis set in order to approximate the same set of density functional. Moreover, we used ECP basis set such as LanL2DZ (Los Alamos National Laboratory 2 Double-Zeta), which is more suitable for transition metals. Besides, utilization of all-electron basis sets for the remaining non-transition metal elements has become more popular in computational studies on transition metal containing materials. Further, the atomic number of molybdenum and oxygen is forty two and eight, respectively. In the present work, α-MoO3 nanostructures are studied with the incorporation of impurities such as Ti, Zr and F. It is known that Ti and Zr belongs to group IVB and is 4th and 5th period, respectively. Thus, LanL2DZ effective core potential will be suitable for the optimization of α-MoO3 nanostructures with impurities. In addition, LanL2DZ basis set is applicable for the elements such as H, Li-La and Hf-Bi, which gives the best results with the pseudopotential approximation. Hence, LanL2DZ basis set is a suitable basis set to optimize α-MoO3 with pseudopotential approximation [37–39]. The HOMO-LUMO gap and density of states spectrum (DOS) of α-MoO3 nanostructures are calculated using Gauss Sum 3.0 package [40]. The energy convergence is obtained within the range of 10–5 eV, during the optimization of α-MoO3 nanostructures. 3. Results and discussion The present work mainly focuses on the study of ionization potential (IP), HOMO-LUMO gap, dipole moment, electron affinity (EA), Mulliken population and adsorption properties of NH3 gas molecules in MoO3 base material with the incorporation of impurities such as Ti, Zr and F in α-MoO3 nanostructures. The reason behind the selection of Ti, Zr and F as impurities is that Ti and Zr belong to the transition metals like Mo. The electronic and structural properties of α-MoO3 nanostructure can be controlled and fine-tuned with chemical modifications, such as doping [41]. Especially, the doping methodology has been widely utilized for numerous conjugated polymers, while dopants play a vital role in modifying their electronic properties of conventional covalent semiconductors [42]. This doping technique can be performed either by application of an external electric field or charge transfer. Owing to the application of doping mechanism, optical and electronic properties of the respective conducting polymers can be widely engineered. In addition, the doping effect influences the transfer charge from semiconductor to metal or 23705-2 Investigation on α-MoO3 nanostructures Figure 1. (Color online) (a) Pristine, (b) Ti substituted, (c) Zr substituted and (d) F substituted α-MoO3 nanostructure. insulator based on the concentration of a dopant [43]. The electronic properties of conjugated polymers can be easily fine-tuned either by atomic/molecular scale doping or chemical modification [41]. Kaloni et al. [44, 45] have reported the effect of the doping mechanism on polythiophene and polypyrrole based materials and studied the structural and electronic properties of pure and doped polymers. In the present work, α-MoO3 nanostructures get distorted, while optimizing the basematerial with Ti, Zr and F elements as dopant, which results in the variation of electronic properties. Moreover, the conductivity of α-MoO3 base material changes with the substitution of impurities. In addition, fluorine is abundant in electrons compared to oxygen, which leads to an increase in n-type behavior. Based on these aspects, the dopants are selected to incorporate in α-MoO3 base material and these impurities tune the conducting property in α-MoO3 base material. Therefore, the adsorption properties of NH3 on α-MoO3 nanostructures can be improved with the substitution impurities. Figure 1 represents the structure of pristine, Ti, Zr and F substituted α-MoO3 nanostructures, respec- tively. The structure of α-MoO3 is taken from International Centre for Diffraction Data (ICDD) card number: 89-7112. The pristine α-MoO3 nanostructure has twelve Mo atoms and thirty eight O atoms. Ti incorporated α-MoO3 nanostructure has eleven Mo atoms, thirty eight O atoms and one Mo atom is replaced with one Ti atom. Similarly, Zr substituted α-MoO3 nanostructure has eleven Mo atoms, thirty eight O atoms and one Mo atom is replaced with one Zr atom. In the case of F substituted α-MoO3 nanostructure, it has twelve Mo atoms, thirty five O atoms and three O atoms are replaced with three F atoms for enhancing the adsorption properties of NH3 on α-MoO3 base material. 3.1. Structural stability and electronic properties of α-MoO3 nanostructures The structural stability of pristine, Ti, Zr and F substituted α-MoO3 nanostructures can be described in terms of formation energy as shown in equation (3.1) Eform = 1/n[E(α-MoO3 nanostructure) − pE(Mo) − qE(O) − rE(dopant)], (3.1) where E(α-MoO3 nanostructures) refers to the total energy of α-MoO3 nanostructures, E(Mo), E(O) and E(dopant) represent the corresponding energy of isolated Mo, O and dopant atoms namely Ti, Zr 23705-3 V. Nagarajan, R. Chandiramouli Table 1. Formation energy, dipole moment and point group of α-MoO3 nanostructures. Nanostructures Formation energy Dipole moment Point group (eV) (D) Pristine α-MoO3 nanostructure −4.38 5.62 C1 Ti substituted α-MoO3 nanostructure −4.36 19.18 C1 Zr substituted α-MoO3 nanostructure −4.30 35.08 C1 F substituted α-MoO3 nanostructure −4.40 40.47 C1 and F. p, q and r represent the total number of Mo, O and dopant atoms, respectively, and n is the total number of atoms in α-MoO3 nanostructure. The dipole moment, point symmetry and the formation energy of pristine, Ti, Zr and F substituted α-MoO3 nanostructures are tabulated in table 1. The formation energy of pristine, Ti, Zr and F substituted α-MoO3 nanostructures is −4.38, −4.36, −4.30 and −4.40 eV, respectively. Before studying the adsorption characteristics, the structural stability of α-MoO3 base material must be studied. The structural stability of α-MoO3 nanostructures slightly decreases with the substitution of Ti and Zr. The formation energy of Ti and Zr substituted α-MoO3 nanostructures is relatively low compared to pristine α-MoO3 nanostructures. By contrast, the stability of α-MoO3 nanostructure slightly increases with the substitution of F. The dipole moment (DP) gives a clear picture about the distribution of charges in α-MoO3 nanostructure. The corresponding dipole moment value of pristine, Ti, Zr and F incorporated α-MoO3 nanostructures is 5.62, 19.18, 35.08 and 40.47 D. Low value of DP is recorded for pristine α-MoO3 nanostructure. It infers that the charge distribution is almost uniform, but not in the case of impurity substituted α-MoO3 nanostructures. Furthermore, C1 point groups are observed for all α-MoO3 nanostructures, which only exhibit identical operation. The electronic properties of pristine, Ti, Zr and F incorporated α-MoO3 nanostructures can be dis- cussed in terms of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) [46, 47]. In the present work, the electronic properties and adsorption properties of NH3 on α-MoO3 nanostructures are studied for a small cluster. The HOMO-LUMO gap of pristine, Ti, Zr and F substituted α-MoO3 nanostructures is 4.68, 2.03, 2.22 and 1.9 eV, respectively. The deviation in the HOMO-LUMO gap between experiment and theoretical values arises owing to the selection of the basis set [11]. Moreover, DFT method is broadly linked to the ground state. Thus, the exchange-correlation po- tential between the excited electronic states may be underestimated. The HOMO-LUMO gap of α-MoO3 nanostructure decreases with the substitution of Ti, Zr and F. Thus, the electronic configuration of Mo, Zr, F and Ti element differs, the occupied states also differ. The corresponding electronic configuration of Ti, Zr and Mo is [1s2 2s2 2p6 3s2 3p6 3d2 4s2], [1s2 2s2 2p6 3s2 3p6 3d10 4s2 4p6 4d2 5s2] and [1s2 2s2 2p6 3s2 3p6 3d10 4s2 4p6 4d5 5s1]. In the case of Ti and Zr atom, the outermost s-orbital is completely filled with electrons and the electrons are partially occupied in d-orbital. Therefore, the s and d-states can be chosen as occupied and unoccupied state, respectively. Moreover, for Zr atom, the d-state is unfilled. In the case of Mo atom, the outermost s-orbital and d-orbital are not completely filled with electrons. Thus, due to the doping effects of Ti, Zr and F, the orbital overlapping leads to the variation in the energy gap in α-MoO3 nanostructures. The HOMO-LUMO level and the energy gap of α-MoO3 nanostructures are tabulated in table 2. The density of states spectrum (DOS) gives an insight into the localization of charges in various energy intervals in α-MoO3 nanostructures. The DOS spectrum and visualization of HOMO-LUMO gap of pristine, Ti, Zr and F substituted α-MoO3 nanostructure are shown in figures 2–5, respectively. In the present work, the localization of charges is recorded to bemore at LUMO level than at HOMO level, which is confirmed by more peak maxima at LUMO level. More peak maxima in α-MoO3 nanostructures arise due to the orbital overlapping of Mo atoms and O atoms in α-MoO3 base material. Moreover, the peak maxima in the virtual orbitals of α-MoO3 base material are more favorable for adsorption characteristics, since the transfer of electrons between NH3 molecules and virtual orbitals can take place easily. 23705-4 Investigation on α-MoO3 nanostructures Table 2. Adsorption energy, Mulliken population, HOMO-LUMO gap and average energy gap variation of α-MoO3 nanostructures. α-MoO3 nanostructures Ead Q (e) EHOMO EFL (eV) ELUMO Eg (eV) Ea g (%) Pristine α-MoO3 − − −11.13 −8.79 −6.45 4.68 − A 1.09 0.30 −11.04 −8.755 −6.47 4.57 2.41 B −2.45 0.11 −11.04 −8.685 −6.33 4.71 0.64 C −8.16 0.93 −8.55 −6.95 −5.35 3.2 46.25 D −11.70 0.56 −9.13 −8.195 −7.26 1.87 150.27 Ti substituted α-MoO3 − − −10.13 −9.115 −8.1 2.03 − E −0.27 0.19 −9.46 −8.785 −8.11 1.35 50.37 F −2.72 0.10 −10.34 −9.275 −8.21 2.13 4.69 Zr substituted α-MoO3 − − −10.48 −9.37 −8.26 2.22 − G −1.09 0.13 −10.15 −9.22 −8.29 1.86 19.35 H −3.26 0.08 −10.37 −9.31 −8.25 2.12 4.72 F substituted α-MoO3 − − −7.9 −6.95 −6 1.9 − I −14.42 1.14 −8.22 −6.865 −5.51 2.71 29.89 J −9.52 0.67 −9.12 −7.385 −5.65 3.47 45.24 Figure 2. (Color online) HOMO-LUMO gap and density of states of pristine α-MoO3 nanostructure. The electronic properties of α-MoO3 nanostructure can also be discussed with the ionization po- tential (IP) and electron affinity (EA) [48, 49]. Figure 6 represents the electron affinity and ionization potential of α-MoO3 nanostructures. Generally, IP depicts the amount of energy required to remove the electron from α-MoO3 nanostructures and the EA represents the energy change with the addition of electrons in α-MoO3 nanostructures. The high value of ionization potential infers that the electrons are tightly bounded to the nucleus in α-MoO3 nanostructure. Therefore, pristine, Ti and Zr substituted α- MoO3 nanostructures have a high value of ionization potential, which infers that the electrons are strongly attracted to the nucleus and more energy is required to remove electrons from α-MoO3 nanostructure. The low value of IP is recorded for F substituted α-MoO3 nanostructure. Thus, less energy is required to remove an electron from F substituted α-MoO3 nanostructure. Electron affinity plays an important role in plasma physics and in chemical sensors. 23705-5 V. Nagarajan, R. Chandiramouli Figure 3. (Color online) HOMO-LUMOgap and density of states of Ti substituted α-MoO3 nanostructure. Figure 4. (Color online)HOMO-LUMOgap and density of states of Zr substitutedα-MoO3 nanostructure. Figure 5. (Color online) HOMO-LUMO gap and density of states of F substituted α-MoO3 nanostructure. 23705-6 Investigation on α-MoO3 nanostructures Figure 6. (Color online) IP and EA of α-MoO3 nanostructure. The EA value of pristine, Ti, Zr and F incorporated α-MoO3 nanostructures is 6.45, 8.1, 8.26 and 6 eV, respectively, which is a favourable condition for chemical sensors. Usually, the amount of transfer of electrons depends on EA of the target gas molecule with the base material. Moreover, EA applies to the electronically conducting solid base material where it can be related to the position of Fermi energy level and the work function. If the base material has a high value of work function, it will in turn influence EA and it will act as electron acceptor and vice versa. Thus, the base material, which has low value of EA will partially transfer electrons between the target gas molecules and the conduction band of metal oxides. In the chemiresistor type of gas sensors, it is only due to the transfer of electrons that the change in the resistance is observed. However, in the present work EA for pristine and impurity substituted MoO3 nanostructures, all have EA value of 6 to 8.26 eV. Furthermore, it can be suggested that MoO3 nanostructures can be used as a chemical sensor. 3.2. Adsorption characteristics of NH3 on α-MoO3 nanostructures Before studying the adsorption properties of NH3 on MoO3 nanostructures, NH3 should be investi- gated in gas phase. The optimized bond length between nitrogen and hydrogen atom in NH3 is 1.01 Å and the bond length between molybdenum and oxygen atoms in α-MoO3 is 1.77 Å. These bond lengths are used during the optimization of α-MoO3 nanostructures. Figure 7 refers to the adsorption of NH3 gas molecule adsorbed on different sites, namely position A, B, C and D in pristine α-MoO3 nanostructure. Figures 8–10 represent the adsorption of ammonia gas molecules adsorbed on various sites such as position E, F, G, H, I and J in Ti, Zr and F substituted α-MoO3 nanostructure. The adsorption energy of NH3 gas molecules on α-MoO3 nanostructure can be calculated by the equation (3.2) as follows: Ead = [E(MoO3) + E(NH3) − E(MoO3/NH3) + E(BSSE)], (3.2) where E(MoO3/NH3) denotes the energy of MoO3/NH3 complex, E(MoO3) and E(NH3) are the isolated energies of MoO3 and NH3 molecules, respectively. The basis set superposition error (BSSE) [50] can be analyzed in terms of counterpoise technique to eliminate the overlap effects on basis functions. α- MoO3 base material is found to have a negative value of energy which confirms the stability of the base 23705-7 V. Nagarajan, R. Chandiramouli Figure 7. (Color online) NH3 adsorbed on position A, B, C and D in pristine MoO3 nanostructure. Figure 8. (Color online) NH3 adsorbed on position E and F in Ti substituted MoO3 nanostructure. material. Moreover, when NH3 gas molecules are adsorbed on α-MoO3 nanostructures, negative values of the adsorption energy (Ead) refer to the more stable system [51, 52]. In the present work, positions B to J all have negative values of adsorption energy. This infers that α-MoO3 nanostructures are more stable and it is most suitable for gas sensor and as catalyst. The adsorption energies of pristine α-MoO3 for positions A, B, C and D are 1.09, −2.45, −8.16 and −11.7 eV, respectively. The corresponding Ead values of Ti incorporated α-MoO3 for positions E and F are −0.27 and −2.72 eV. Zr substituted α-MoO3 for positions G and H have Ead values of −1.09 and −3.26 eV, respectively. F substituted α-MoO3 for positions I and J has adsorption energy values of −14.42 and −9.52 eV, respectively. The other significant parameter to decide NH3 adsorption characteristics is the band gap of α-MoO3 nanostructure. Conductivity of α-MoO3 nanostructure increases due to a decrease 23705-8 Investigation on α-MoO3 nanostructures Figure 9. (Color online) NH3 adsorbed on position G and H in Zr substituted MoO3 nanostructure. Figure 10. (Color online) NH3 adsorbed on position I and J in F substituted MoO3 nanostructure. in the band gap, when NH3 gets adsorbed on positions A, C, D, E, G and H of α-MoO3 nanostructures, the corresponding band gap values are 4.57, 3.2, 1.87, 1.35, 1.86 and 2.12 eV, which are lower than their corresponding isolated counterpart. By contrast, conductivity of α-MoO3 nanostructures decreases owing to an increase in the band gap, when NH3 gets adsorbed on positions B, F, I and J with energy gap values of 4.71, 2.13, 2.71 and 3.47 eV, respectively, which are higher than their isolated counterpart. From the observations, it is revealed that the adsorption energy and the energy gap values change due to the adsorption of NH3 in α-MoO3 nanostructure. Prasad et al. [53] reported the gas-sensing properties of MoO3 with ammonia gas. Imawan et al. [19] proposed the gas-sensing properties of modified MoO3 thin films using Ti-overlayers for NH3 gas sensors. With the influence of Ti-overlayers in MoO3 material, selectivity and sensitivity of NH3 gas molecules get enhanced. The response of NH3 mainly depends upon temperature. Furthermore, to improve the adsorption of NH3 on MoO3, the activation energy is required. The high operating temperature of molybdenum oxide enhances the catalytic activity. Therefore, the temperature dependent NH3 gas sensitivity is possible in MoO3 nanostructures. Based on the condition of the chemisorption mechanism, MoO3 material shows good response to NH3 gas molecules among other reducing gases such as H2, CO and SO2 at operating temperature of 200°C. Upon exposure of NH3 gas molecules to molybdenum oxides, the resistance value changes leading to the detection of ammonia. The results obtained in the present work are for the ambient condition. Usually, by incorporating impurities or functionalization of the base material with Pd, Pt will decrease the operating temperature of metal oxide during gas sensing. Moreover, in the present study, the conductivity of α-MoO3 material also varies 23705-9 V. Nagarajan, R. Chandiramouli due to the transfer of electrons between NH3 gas molecules and MoO3 nanostructure. This validates the present work with the reported work. In this work, the gas sensing properties of α-MoO3 nanostructures are studied with the substitution of Ti, Zr and F impurities. From the observation, it is revealed that the pristine, Ti, Zr and F incorporated α-MoO3 nanostructures are a promising material for sensing ammonia. The most favorable adsorption site of the NH3 molecule on α-MoO3 material can be concluded only after investigating the variation in the average energy gap (Ea g) along with its respective isolated counterpart [54, 55]. Table 2 refers the HOMO-LUMOgap, percentage variation in energy gap, adsorption energy andMulliken population. As a result, it is inferred that the most suitable site for adsorption of NH3 molecules on α-MoO3 nanostructures are positions C, D, E, G, I and J. The adsorption of N atom in NH3 adsorbed on O, Ti, Zr and F atoms of pristine, Ti, Zr and F substituted α-MoO3 nanostructure and the adsorption of H atom in NH3 adsorbed on O and F atom of pristine and F substituted α-MoO3 nanostructure are observed to be a more prominent adsorption site. The average energy gap variation is comparatively high among other adsorption sites. The transfer of electrons between ammonia gas molecules and α-MoO3 can also be analyzed with the help of Mulliken population analysis (Q) [56–58]. The negative charge of Mulliken population shows that the electrons are transferred from α-MoO3 material to NH3 gas molecules while the positive value of Q shows that the electrons are transferred from NH3 gases to α-MoO3 base material. In the present work, all positions have positive value of Q, which infers that the electrons are transferred from NH3 molecules to α-MoO3 nanostructure. The Q values of pristine α-MoO3 nanostructure for positions A, B, C and D are 0.3, 0.11, 0.93 and 0.56 e, respectively. The corresponding Mulliken charge transfer values of Ti, Zr and F incorporated α-MoO3 nanostructure for positions E, F, G, H, I and J are 0.19, 0.10, 0.13, 0.08, 1.14 and 0.67 e. As a result, it is observed that the high value of Mulliken charge transfer, average energy gap variation and adsorption energy are found to be more prominent for positions C, D, E, G, I and J. Conductivity ofα-MoO3 nanostructure for positionsA, C, D, E, G andH increases owing to the narrowing of the energy gap. The remaining positions such as, B, F, I and J have less conductivity compared to the isolated counterpart. However, the conductivity decreases for positions I and J, the average energy gap variations are observed to be high, which is favorable for a good gas sensor. Therefore, the most favorable adsorption sites can be found only after investigating the adsorption energy, Mulliken population and HOMO-LUMOgap of α-MoO3 nanostructure. Figures 11–20 represent the density of states spectrum and HOMO-LUMO gap of position A–J of α-MoO3 nanostructures, respectively. Below the DOS spectrum, the green and red line indicates the HOMO-LUMO gap. From the DOS spectrum, it is clearly revealed that more peak maxima are observed in unoccupied orbital than in occupied orbital. This implies that the electrons can easily transfer between α-MoO3 and NH3 gas molecules. Among all the optimum positions of α-MoO3 nanostructure, positions C, D, E and J have more peak maximum in unoccupied orbital. Usually, in metal oxide based chemiresistors, which are used for gas/vapour sensing, Figure 11. (Color online) HOMO-LUMO gap and density of states of position A. 23705-10 Investigation on α-MoO3 nanostructures Figure 12. (Color online) HOMO-LUMO gap and density of states of position B. Figure 13. (Color online) HOMO-LUMO gap and density of states of position C. Figure 14. (Color online) HOMO-LUMO gap and density of states of position D. 23705-11 V. Nagarajan, R. Chandiramouli Figure 15. (Color online) HOMO-LUMO gap and density of states of position E. Figure 16. (Color online) HOMO-LUMO gap and density of states of position F. Figure 17. (Color online) HOMO-LUMO gap and density of states of position G. 23705-12 Investigation on α-MoO3 nanostructures Figure 18. (Color online) HOMO-LUMO gap and density of states of position H. Figure 19. (Color online) HOMO-LUMO gap and density of states of position I. Figure 20. (Color online) HOMO-LUMO gap and density of states of position J. 23705-13 V. Nagarajan, R. Chandiramouli the exchange of electrons takes place between the target gas and the base material. In the present study, a larger number of peak maxima is observed in the unoccupied orbital, which confirms the transfer of electrons between NH3 target gas and α-MoO3 base material for different positions (C, D, E and J). The alpha orbital and beta orbital exist for positions I and J, which arise due to spin up and down electrons due to orbital overlapping of F atoms with α-MoO3 nanostructure. This further strengthens NH3 adsorption properties on α-MoO3 nanostructure, when substituted with F in α-MoO3 base material. Hence, the variation of the band gap leads to the change in the resistance of α-MoO3 nanostructure, which can be measured with a simple two probe arrangement. Analyzing all the aspects, it can be concluded that α-MoO3 can be used as NH3 gas sensing material in the mixed gas atmosphere. 4. Conclusions To sum up, DFT method is employed to study NH3 adsorption properties on α-MoO3 material with B3LYP/LanL2DZ basis set. The electronic and structural stability of pristine, Ti, Zr and F substituted α- MoO3 nanostructure has been investigated. The structural stability of all α-MoO3 nanostructures has also been investigated using the formation energy. The electronic properties of α-MoO3 nanostructures are discussed in terms of HOMO-LUMO gap, ionization potential and electron affinity. The dipole moment and the point group of pristine, Ti, Zr and F substituted α-MoO3 nanostructures are also reported. The most prominent adsorption site of NH3 on α-MoO3 nanostructure is identified and discussed in terms of adsorption energy, average energy gap variation, Mulliken population analysis and HOMO-LUMO gap. Furthermore, the negative values of adsorption energy for the positions B to J confirm the stability of α-MoO3 nanostructure upon adsorption of NH3 molecules. The adsorption characteristics of NH3 gas molecules get modified with the incorporation of Ti and F as impurities in α-MoO3 base material. Moreover, there is no significant improvement in NH3 adsorption properties on α-MoO3 material with Zr substitution. In conclusion, the most favorable adsorption site of NH3 on α-MoO3 nanostructures is when the N atom in NH3 adsorbed on O, Ti, Zr and F atoms of pristine, Ti, Zr and F substituted α-MoO3 nanostructure and the adsorption of H atom in NH3 adsorbed on the O and F atoms of pristine and F substituted α-MoO3 nanostructure. Thus, α-MoO3 nanostructure can be used as a good NH3 gas sensor. In addition, the sensing characteristics of NH3 can be modified with the incorporation of Ti and F as dopant in α-MoO3 nanostructures. References 1. Wei A., Wang Z., Pan L.-H., Li W.-W., Xiong L., Dong X.-Ch., Huang W., Chin. Phys. Lett., 2011, 28, 080702, doi:10.1088/0256-307X/28/8/080702. 2. Stankova M., Vilanova X., Calderer J., Llobet E., Brezmes J., Gràcia I., Cané C., Correig X., Sens. Actuators B, 2006, 113, 241, doi:10.1016/j.snb.2005.02.056. 3. Serebryakov D.V., Morozov I.V., Kosterev A.A., Letokhov V.S., Quantum Electron., 2010, 40, 167, doi:10.1070/QE2010v040n02ABEH014147. 4. Sazhin S.G., Soborover E.I., Tokarev S.V., Russ. J. Nondestr. Test., 2003, 39, 791, doi:10.1023/B:RUNT.0000020251.56686.a5. 5. Vidotti M., Dall’Antonia L.H., de Torresi S.I.C., Bergamaski K., Nart F.C., Anal. Chim. Acta, 2003, 489, 207, doi:10.1016/S0003-2670(03)00757-8. 6. Chandiramouli R., Jeyaprakash B.G., Solid State Sci., 2013, 16, 102, doi:10.1016/j.solidstatesciences.2012.10.017. 7. Chandiramouli R., Jeyaprakash B.G., RSC Adv., 2015, 5, 43930, doi:10.1039/C5RA00734H. 8. Comini E., Faglia G., Sberveglieri G., Pan Z.W., Wang Z.L., Appl. Phys. Lett., 2002, 81, 1869, doi:10.1063/1.1504867. 9. Comini E., Anal. Chim. Acta, 2006, 568, 28, doi:10.1016/j.aca.2005.10.069. 10. Tomchenko A.A., Harmer G.P., Marquis B.T., Sens. Actuators B, 2005, 108, 41, doi:10.1016/j.snb.2004.11.059. 11. Alizadeh S., Hassanzadeh-Tabrizi S.A., Ceram. Int., 2015, 41, 10839, doi:10.1016/j.ceramint.2015.05.024. 12. Ferroni M., Guidi V., Martinelli G., Sacerdoti M., Nelli P., Sberveglieri G., Sens. Actuators B, 1998, 48, 285, doi:10.1016/S0925-4005(98)00057-4. 23705-14 https://doi.org/10.1088/0256-307X/28/8/080702 https://doi.org/10.1016/j.snb.2005.02.056 https://doi.org/10.1070/QE2010v040n02ABEH014147 https://doi.org/10.1023/B:RUNT.0000020251.56686.a5 https://doi.org/10.1016/S0003-2670(03)00757-8 https://doi.org/10.1016/j.solidstatesciences.2012.10.017 https://doi.org/10.1039/C5RA00734H https://doi.org/10.1063/1.1504867 https://doi.org/10.1016/j.aca.2005.10.069 https://doi.org/10.1016/j.snb.2004.11.059 https://doi.org/10.1016/j.ceramint.2015.05.024 https://doi.org/10.1016/S0925-4005(98)00057-4 Investigation on α-MoO3 nanostructures 13. Sunu S.S., Prabhu E., Jayaraman V., Gnanasekar K.I., Gnanasekaran T., Sens. Actuators B, 2003, 94, 189, doi:10.1016/S0925-4005(03)00342-3. 14. Dadyburjor D.B., Jewur S.S., Ruckenstein E., Catal. Rev. Sci. Eng., 1979, 19, 293, doi:10.1080/03602457908068057. 15. Larrubia M.A., Ramis G., Busca G., Appl. Catal. B, 2000, 27, L145, doi:10.1016/S0926-3373(00)00150-8. 16. Sunu S.S., Prabhu E., Jayaraman V., Gnanasekar K.I., Seshagiri T.K., Gnanasekaran T., Sens. Actuators B, 2004, 101, 161, doi:10.1016/j.snb.2004.02.048. 17. Imawan C., Steffes H., Solzbacher F., Obermeier E., Sens. Actuators B, 2001, 78, 119, doi:10.1016/S0925-4005(01)00801-2. 18. Ferroni M., Guidi V., Martinelli G., Nelli P., Sacerdoti M., Sberveglieri G., Thin Solid Films, 1997, 307, 148, doi:10.1016/S0040-6090(97)00279-4. 19. Imawan C., Solzbacher F., Steffes H., Obermeier E., Sens. Actuators B, 2000, 64, 193, doi:10.1016/S0925-4005(99)00506-7. 20. Zhou J., Deng S.Z., Xu N.S., Chen J., She J.C., Appl. Phys. Lett., 2003, 83, 2653, doi:10.1063/1.1613992. 21. Prasad A.K., Kubinski D.J., Gouma P.I., Sens. Actuators B, 2003, 93, 25, doi:10.1016/S0925-4005(03)00336-8. 22. Patil R.S., Uplane M.D., Patil P.S., Appl. Surf. Sci., 2006, 252, 8050, doi:10.1016/j.apsusc.2005.10.016. 23. Gesheva K.A., Ivanova T., Chem. Vap. Deposition, 2006, 12, 231, doi:10.1002/cvde.200506404. 24. Ashraf S., Blackman C.S., Hyett G., Parkin I.P., J. Mater. Chem., 2006, 16, 3575, doi:10.1039/b607335b. 25. Irmawati R., Shafizah M., Int. J. Basic Appl. Sci., 2009, 9, 34. 26. Kannan B., Pandeeswari R., Jeyaprakash B.G., Ceram. Int., 2014, 40, 5817, doi:10.1016/j.ceramint.2013.11.022. 27. Martínez H.M., Torres J., Rodríguez-García M.E., López Carreño L.D., Physica B, 2012, 407, 3199, doi:10.1016/j.physb.2011.12.064. 28. Hussain O.M., Rao K.S., Mater. Chem. Phys., 2003, 80, 638, doi:10.1016/S0254-0584(03)00101-9. 29. Nagarajan V., Chandiramouli R., Ceram. Int., 2014, 40, 16147, doi:10.1016/j.ceramint.2014.07.046. 30. Nagarajan V., Chandiramouli R., J. Inorg. Organomet. Polym., 2014, 24, 1038, doi:10.1007/s10904-014-0095-z. 31. Nagarajan V., Chandiramouli R., Superlattices Microstruct., 2015, 78, 22, doi:10.1016/j.spmi.2014.11.027. 32. Frisch M.J., Trucks G.W., Schlegel H.B., Scuseria G.E., Robb M.A., Cheeseman J.R., Scalmani G., Barone V., Mennucci B., Petersson G.A., et al., Gaussian 09, Revision D.01, Gaussian Inc., Wallingford CT, 2009. 33. Becke A.D., Phys. Rev. A, 1988, 38, 3098, doi:10.1103/PhysRevA.38.3098. 34. Becke A.D., J. Chem. Phys., 1993, 98, 1372, doi:10.1063/1.464304. 35. Hay P.J., Wadt W.R., J. Chem. Phys., 1985, 82, 270, doi:10.1063/1.448799. 36. Wadt W.R., Hay P.J., J. Chem. Phys., 1985, 82, 284, doi:10.1063/1.448800. 37. Chempath S., Zhang Y., Bell A.T., J. Phys. Chem. C, 2007, 111, 1291, doi:10.1021/jp064741j. 38. Moberg D.R., Thibodeau T.J., Amar F.G., Frederick B.G., J. Phys. Chem. C, 2010, 114, 13782, doi:10.1021/jp104421a. 39. Kadossov E.B., Soufiani A.R., Apblett A.W., Materer N.F., RSC Adv., 2015, 5, 97755, doi:10.1039/C5RA08006A. 40. O’Boyle N.M., Tenderholt A.L., Langner K.M., J. Comput. Chem., 2008, 29, 839, doi:10.1002/jcc.20823. 41. Roth S., Bleier H., Adv. Phys., 1987, 36, 385, doi:10.1080/00018738700101032. 42. Deore B.A., Yu I., Freund M.S., J. Am. Chem. Soc., 2004, 126, 52, doi:10.1021/ja038499v. 43. Heeger A.J., Kivelson S., Schrieffer J.R., Su W.P., Rev. Mod. Phys., 1988, 60, 781, doi:10.1103/RevModPhys.60.781. 44. Kaloni T.P., Schreckenbach G., Freund M.S., Sci. Rep., 2016, 6, 36554, doi:10.1038/srep36554. 45. Kaloni T.P., Schreckenbach G., Freund M.S., J. Phys. Chem. C, 2015, 119, 3979, doi:10.1021/jp511396n. 46. Sriram S., Chandiramouli R., Jeyaprakash B.G., Struct. Chem., 2014, 25, 389, doi:10.1007/s11224-013-0302-5. 47. Sriram S., Chandiramouli R., Balamurugan D., Thayumanvan A., Eur. Phys. J. Appl. Phys., 2013, 62, 30101, doi:10.1051/epjap/2013130013. 48. Zhan C.-G., Nichols J.A., Dixon D.A., J. Phys. Chem. A, 2003, 107, 4184, doi:10.1021/jp0225774. 49. Nagarajan V., Chandiramouli R., Alexandria Eng. J., 2014, 53, 437, doi:10.1016/j.aej.2014.03.008. 50. Turi L., Dannenberg J., J. Phys. Chem., 1993, 97, 2488, doi:10.1021/j100113a002. 51. Nagarajan V., Chandiramouli R., Struct. Chem., 2014, 25, 1765, doi:10.1007/s11224-014-0451-1. 52. Nagarajan V., Chandiramouli R., J. Inorg. Organomet. Polym., 2015, 25, 837, doi:10.1007/s10904-015-0167-8. 53. Prasad A.K., Gouma P.I., Kubinski D.J., Visser J.H., Soltis R.E., Schmitz P.J., Thin Solid Films, 2003, 436, 46, doi:10.1016/S0040-6090(03)00524-8. 54. Nagarajan V., Chandiramouli R., Comput. Theor. Chem., 2014, 1049, 20, doi:10.1016/j.comptc.2014.09.009. 55. Chandiramouli R., Srivastava A., Nagarajan V., Appl. Surf. Sci., 2015, 351, 662, doi:10.1016/j.apsusc.2015.05.166. 56. Mulliken R.S., J. Chem. Phys., 1955, 23, 1833, doi:10.1063/1.1740588. 23705-15 https://doi.org/10.1016/S0925-4005(03)00342-3 https://doi.org/10.1080/03602457908068057 https://doi.org/10.1016/S0926-3373(00)00150-8 https://doi.org/10.1016/j.snb.2004.02.048 https://doi.org/10.1016/S0925-4005(01)00801-2 https://doi.org/10.1016/S0040-6090(97)00279-4 https://doi.org/10.1016/S0925-4005(99)00506-7 https://doi.org/10.1063/1.1613992 https://doi.org/10.1016/S0925-4005(03)00336-8 https://doi.org/10.1016/j.apsusc.2005.10.016 https://doi.org/10.1002/cvde.200506404 https://doi.org/10.1039/b607335b https://doi.org/10.1016/j.ceramint.2013.11.022 https://doi.org/10.1016/j.physb.2011.12.064 https://doi.org/10.1016/S0254-0584(03)00101-9 https://doi.org/10.1016/j.ceramint.2014.07.046 https://doi.org/10.1007/s10904-014-0095-z https://doi.org/10.1016/j.spmi.2014.11.027 https://doi.org/10.1103/PhysRevA.38.3098 https://doi.org/10.1063/1.464304 https://doi.org/10.1063/1.448799 https://doi.org/10.1063/1.448800 https://doi.org/10.1021/jp064741j https://doi.org/10.1021/jp104421a https://doi.org/10.1039/C5RA08006A https://doi.org/10.1002/jcc.20823 https://doi.org/10.1080/00018738700101032 https://doi.org/10.1021/ja038499v https://doi.org/10.1103/RevModPhys.60.781 https://doi.org/10.1038/srep36554 https://doi.org/10.1021/jp511396n https://doi.org/10.1007/s11224-013-0302-5 https://doi.org/10.1051/epjap/2013130013 https://doi.org/10.1021/jp0225774 https://doi.org/10.1016/j.aej.2014.03.008 https://doi.org/10.1021/j100113a002 https://doi.org/10.1007/s11224-014-0451-1 https://doi.org/10.1007/s10904-015-0167-8 https://doi.org/10.1016/S0040-6090(03)00524-8 https://doi.org/10.1016/j.comptc.2014.09.009 https://doi.org/10.1016/j.apsusc.2015.05.166 https://doi.org/10.1063/1.1740588 V. Nagarajan, R. Chandiramouli 57. Baei M.T., Peyghan A.A., Bagheri Z., Struct. Chem., 2013, 24, 1099, doi:10.1007/s11224-012-0139-3. 58. Beheshtian J., Baei M.T., Bagheri Z., Peyghan A.A., Appl. Surf. Sci., 2013, 264, 699, doi:10.1016/j.apsusc.2012.10.100. Взаємодiя газу NH3 на наноструктурах α-MoO3 — дослiдження за допомогою теорiї функцiоналу густини В. Нагараджан, Р. Чандiрамулi Школа електротехнiки та електронiки, Академiя мистецтв, наукових i технологiчних дослiджень Шанмуга (унiверситет SASTRA), Танджавур, Тамiл-Наду— 613 401, Iндiя Структурна стiйкiсть, електроннi властивостi i NH3 адсорбцiйнi властивостi первинних, Ti, Zr i F замiщених α-MoO3 наноструктур успiшно вивченi, використовуючи теорiю функцiоналу густини з B3LYP/ LanL2DZ базисним набором. Структурна стiйкiсть α-MoO3 наноструктур обговорюється в термiнах енергiї утворю-вання. Електроннi властивостi первинних, Ti, Zr i F iнкорпорованих α-MoO3 наноструктур обговорюютьсяв термiнах HOMO-LUMO щiлини, потенцiалу iонiзацiї та електронної афiнностi. α-MoO3 наноструктури можуть бути точно-регульованi за допомогою пiдходящої домiшки замiщення для покращення адсорб- цiйних властивостей амонiяку,що може бути використано для виявлення NH3 в змiшаному середовищi.Дана робота дає розумiння про застосування α-MoO3 наноструктур для виявлення NH3. Ключовi слова: наноструктура, адсорбцiя, NH3, HOMO-LUMOщiлина, MoO3 23705-16 https://doi.org/10.1007/s11224-012-0139-3 https://doi.org/10.1016/j.apsusc.2012.10.100 Introduction Computational methods Results and discussion Structural stability and electronic properties of -MoO3 nanostructures Adsorption characteristics of NH3 on -MoO3 nanostructures Conclusions