Design of DC potential input into H-type resonator
The using of electrostatic potential is one of possible methods to realize more efficiently beam acceleration and focusing in low energy ion linac. For example, the additional beam focusing can be realized if dc potentials are supplied to the same electrodes which are used to excite RF field. But th...
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| Zitieren: | Design of dc potential input into H-type resonator / E.S. Masunov, S.M. Polozov, P.R. Safikanov, A.V. Voronkov // Вопросы атомной науки и техники. — 2010. — № 3. — С. 54-56. — Бібліогр.: 3 назв. — англ. |
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irk-123456789-170142011-02-19T12:03:32Z Design of DC potential input into H-type resonator Masunov, E.S. Polozov, S.M. Safikanov, P.R. Voronkov, A.V. Физика и техника ускорителей The using of electrostatic potential is one of possible methods to realize more efficiently beam acceleration and focusing in low energy ion linac. For example, the additional beam focusing can be realized if dc potentials are supplied to the same electrodes which are used to excite RF field. But the input system of dc potential can make worse electro- dynamic characteristics of H-type resonator. In this paper the optimal design of dc potential input into H-type cavity is suggested. Использование электростатического потенциала является одним из возможных методов более эффективного ускорения ионов в линейном ускорителе на малую энергию. Например, дополнительную фокусировку пучка можно реализовать, если постоянный электростатический потенциал подавать на те же самые электроды, на которые подается ВЧ-потенциал. Но система ввода постоянного потенциала может существенно ухудшить электродинамические характеристики резонатора Н-типа. Предложена оптимальная конструкция системы ввода электростатического потенциала в такой резонатор. Використання електростатичного потенціалу є одним з можливих методів більш ефективного прискорення іонів у лінійному прискорювачі на малу енергію. Наприклад, додаткове фокусування пучка можна реалізувати, якщо постійний електростатичний потенціал подавати на ті ж самі електроди, на які подається ВЧ-потенціал. Але система введення постійного потенціалу може суттєво погіршити електродинамічні характеристики резонатора Н-типу. Запропоновано оптимальну конструкцію системи введення електростатичного потенціалу в такий резонатор. 2010 Article Design of dc potential input into H-type resonator / E.S. Masunov, S.M. Polozov, P.R. Safikanov, A.V. Voronkov // Вопросы атомной науки и техники. — 2010. — № 3. — С. 54-56. — Бібліогр.: 3 назв. — англ. 1562-6016 http://dspace.nbuv.gov.ua/handle/123456789/17014 en Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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Физика и техника ускорителей Физика и техника ускорителей |
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Физика и техника ускорителей Физика и техника ускорителей Masunov, E.S. Polozov, S.M. Safikanov, P.R. Voronkov, A.V. Design of DC potential input into H-type resonator |
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The using of electrostatic potential is one of possible methods to realize more efficiently beam acceleration and focusing in low energy ion linac. For example, the additional beam focusing can be realized if dc potentials are supplied to the same electrodes which are used to excite RF field. But the input system of dc potential can make worse electro- dynamic characteristics of H-type resonator. In this paper the optimal design of dc potential input into H-type cavity is suggested. |
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Article |
| author |
Masunov, E.S. Polozov, S.M. Safikanov, P.R. Voronkov, A.V. |
| author_facet |
Masunov, E.S. Polozov, S.M. Safikanov, P.R. Voronkov, A.V. |
| author_sort |
Masunov, E.S. |
| title |
Design of DC potential input into H-type resonator |
| title_short |
Design of DC potential input into H-type resonator |
| title_full |
Design of DC potential input into H-type resonator |
| title_fullStr |
Design of DC potential input into H-type resonator |
| title_full_unstemmed |
Design of DC potential input into H-type resonator |
| title_sort |
design of dc potential input into h-type resonator |
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
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2010 |
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Физика и техника ускорителей |
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http://dspace.nbuv.gov.ua/handle/123456789/17014 |
| citation_txt |
Design of dc potential input into H-type resonator / E.S. Masunov, S.M. Polozov, P.R. Safikanov, A.V. Voronkov // Вопросы атомной науки и техники. — 2010. — № 3. — С. 54-56. — Бібліогр.: 3 назв. — англ. |
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2025-07-02T18:19:04Z |
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| fulltext |
DESIGN OF DC POTENTIAL INPUT INTO H-TYPE RESONATOR
E.S. Masunov, S.M. Polozov, P.R. Safikanov, A.V. Voronkov
Moscow Engineering Physics Institute, Moscow, Russia
E-mail: smpolozov@mephi.ru
The using of electrostatic potential is one of possible methods to realize more efficiently beam acceleration and
focusing in low energy ion linac. For example, the additional beam focusing can be realized if dc potentials are sup-
plied to the same electrodes which are used to excite RF field. But the input system of dc potential can make worse
electro- dynamic characteristics of H-type resonator. In this paper the optimal design of dc potential input into H-
type cavity is suggested.
PACS: 29.17.w, 29.27.Bd
1. INTRODUCTION
Nowadays a number of papers appeared, where it is
suggested to use RF field jointly with dc potential in
resonator of accelerator.
In [1] it was considered undulator linear accelerator
with the electrostatic undulator (UNDULAC-E). The
beam acceleration and focusing in such system are real-
ized by the force which is to be driven by combination
of two non-synchronous spatial harmonic (RF and elec-
trostatic field). In UNDULAC with electrostatic undula-
tor it is possible to accelerate ribbon ion beam.
In [2] it was suggested to use the dc field with se-
quence of potential between drift tubes for increasing of
focusing efficiency of low energy beams. Supply of
electrostatic potential to even drift tubes was designed
through blocking capacity. The efficiency of beam fo-
cusing increased using of such structure.
Also, was undertaken several attempts of using dc
field for the multipactor breakdown control.
The efficiency of intensive low energy ion beam fo-
cusing can be increased by using of electrostatic poten-
tial. In the same way it is reduce possibility of electron
avalanche appearance as a result of resonance condition
violation.
In this article a several different types of the electro-
static potential inputting into resonator are studied.
This article deals with two interdigital H-type reso-
nators: conventional IH-resonator (see Fig.1) and dou-
ble IH-resonator (also called H funneling resonator)
with frequency 150 MHz and π mode of oscillation.
These structures will be compared by electrodynamics
efficiency: quality Q and shunt impedance Rsh.
2. IH RESONATOR
The computer simulation of RF field distribution in
common IH-resonator was done and electrodynamics
characteristics of structure were calculated. The general
view of resonator is shown in Fig.1.
Q-factor and shunt impedance of resonator without
dc input are Q=10940 and Rsh=100 MOhm/m.
Further several types of dc inputs into resonator
were studied. The first stage is the degenerated capaci-
tor (see Fig.2,a). One of the vanes there is attached to
even drift tubes and has no galvanic contact with reso-
nator.
____________________________________________________________
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2010. № 3.
Series: Nuclear Physics Investigations (54), p.54-56.
54
The capacity design in Fig.2,b is formed by wider
sides of two parallel vanes. One of them is attached to
the even drift tubes and has no galvanic contact with
resonator. Another is attached to resonator and has no
contact with drift tubes.
Fig.1. IH-resonator without electrostatic potential input.
Front view: 1 – resonator; 2 – tube holders;
3 – vanes; 4 – drift tubes
The design in Fig.2,c is similar to Fig.2,b, but the
capacity at Fig.2,c is constructed by the sides of three
parallel vanes. Two of them are attached to the resona-
tor and has no contact with drift tubes.
The construction showed in Fig.2,d is a plane ca-
pacitor. One of its plate is a T-shaped vane, to which the
even drift tubes are attached, the second plate is the re-
sonator’s side.
a b
с d
Fig.2. IH-resonator with separator capacity.
Front view. a – vane-resonator; b – double-vanes;
с – three wanes; d – plate capacity
Computer simulation of RF field distribution in such
constructions was done. The distribution of field on
longitudinal axis of accelerating-focusing canal was
mailto:masunov@dinus.mephi.ru
derived and electrodynamics parameters structure were
calculated. The designs of vane-resonator and double-
vanes can not be used for acceleration because there are
no π mode oscillations (see Fig.3,a,b). In constructions
with three vanes and resonator with plate capacity π
mode oscillation on actual mode is realized and accel-
eration in such structure is possible (Fig.3,c,d). How-
ever, after comparing Q-factors of this designs the reso-
nator with plate capacity has the more efficiency with
Q=7550 (Quality of construction with three vanes is
Q=5000).
55
Therefore, to input of electrostatic potential in IH-
resonators it is appropriate to use the design of resonator
with plate capacity.
Two contacts in resonator side which are distant
from each other on λ/2 are showed in Fig.4. They are
used to supply the electrostatic potential into the resona-
tor. The internal hole diameters for contacts are chosen
basing on breakdown strength and exclusion radiation
from them. The choke groove was used (see Fig.4) to
decrease the radiation from supply hole. Computer
simulation of RF fields in resonator with two contacts
supply and choke groove was done and the fields distri-
bution and electrodynamics characteristic were calcu-
lated. The radiation from supply hole was suppressed
because of choke groove using in commeasure of con-
tacts and T-shaped vane. It is clean by distribution of H-
field showed in Fig.5.
a
b
c
d
Fig.3. Distribution of E-field on longitudinal axis in
double-chamber H-resonator with blocking capacity
a – vane-resonator; b – double-vanes;
с – three wanes; d – plate capacity
As result the quality of structure with supply has de-
creased slightly: Q=7350. The calculated shunt imped-
ance is equal to Rsh=50 МOhm/m.
а b
Fig.4. IH-resonator with electrostatic input.
a – general view; b – front view
Fig.5. Distribution of H-field in IH-resonator with elec-
trostatic input and the choke groove. Front view
3. H FUNNELING RESONATOR
H funneling resonator was studied also (see Fig.6).
Computer simulation of RF field distribution without
electrostatic potential supply was done initially, and
electrodynamics characteristic were calculated.
Quality and shunt impedance of H-type resonator
without supply are Q=9800, Rsh=80 MOhm/m.
Fig.6. H funneling resonator without electrostatic input.
Front view. 1 – resonator; 2 – drift tubes; 3 – vanes;
4 – inner resonator
Three types of electrostatic potential supply in this
H-resonator were considered. H-resonator with one
supply in the center of resonator side is presented in
Fig.7,a. Supply contact is placed vertically below of
inner resonator. Two supplies at side which distant from
each other on λ/2 are shown in Fig.7,b. Supply contact
is placed vertically below of the inner resonator. The
upply at the end surface is shown in Fig.7,c. The supply
contact is placed horizontally on inner resonator level.
Computer simulation was done to define the optimal
design of H funneling resonator with electrostatic poten-
tial supply. The computer simulation of RF field distribu-
tion and electrodynamics parameters were considered.
The RF field distributions are distort by contact sup-
ply and supply holes. But this distortions are more suffi-
ciently in cases with one supply at the center of side
(Fig.8,a) and one supply at the end surface (Fig.8,c)
comparatively with two supply at sidewall which distant
from each other on λ/2 Fig.8,b.
As a result of introduced distortions qualities of
structures were fallen. The minimal decreasing is for
design with two contacts supply (Q=8900,
Rsh=80 MOhm/m).
56
In such way the construction with two contacts sup-
ply at resonator side which distant from each other on
λ/2 is optimal for H funneling resonator.
a
b
c
Fig.7. H-resonator, with:
a – one supply at center of side; b – two supply at side
which distant from each other on λ/2;
c – supplies at end surface. Side-view
CONCLUSIONS
The several types of electrostatic potential input into
H-type resonator were described. Most effective accel-
erating structure design is defined by electrodynamics
efficiency and construction simplicity.
Optimal accelerating structure without electrostatic po-
tential is IH-type resonator. It has high quality, low loss
and simple to construct, as against H funneling resonator.
In structures with electrostatic input electrodynam-
ics efficiency is higher in H funneling resonator. The
quality and shunt impedance fall is not so like for IH-
resonator.
a
b
c
Fig.8. Distribution of H-field in H funneling resonator
with a – one supply at center of side; b – two supply at
side which distant from each other on λ/2;
c – supply at end surface. Side-view
REFERENCES
1. V.S. Dyubkov, E.S. Masunov // Int. J. of Modern
Phys. A. 2009, v.24, №5, р.843-856.
2. Ye.V. Gussev, P.А. Demchenko, et al. // Problems
of Atomic Science and Technology. Series “Nuclear
Physics Investigations” (50). 2008, №5, p.28-32.
3. E.S. Masunov // Sov. Phys. Tech. Phys. 1990, v.35,
issue 8, p.962-965.
Статья поступила в редакцию 09.09.2009 г.
КОНСТРУКЦИИ СИСТЕМЫ ВВОДА ЭЛЕКТРОСТАТИЧЕСКОГО ПОТЕНЦИАЛА
В РЕЗОНАТОРЫ Н-ТИПА
Э.С. Масунов, С.М. Полозов, П.Р. Сафиканов, А.В. Воронков
Использование электростатического потенциала является одним из возможных методов более эффектив-
ного ускорения ионов в линейном ускорителе на малую энергию. Например, дополнительную фокусировку
пучка можно реализовать, если постоянный электростатический потенциал подавать на те же самые элек-
троды, на которые подается ВЧ-потенциал. Но система ввода постоянного потенциала может существенно
ухудшить электродинамические характеристики резонатора Н-типа. Предложена оптимальная конструкция
системы ввода электростатического потенциала в такой резонатор.
КОНСТРУКЦІЇ СИСТЕМИ ВВЕДЕННЯ ЕЛЕКТРОСТАТИЧНОГО ПОТЕНЦІАЛУ
В РЕЗОНАТОРИ Н-ТИПУ
Е.С. Масунов, С.М. Полозов, П.Р. Сафіканов, А.В. Воронков
Використання електростатичного потенціалу є одним з можливих методів більш ефективного приско-
рення іонів у лінійному прискорювачі на малу енергію. Наприклад, додаткове фокусування пучка можна
реалізувати, якщо постійний електростатичний потенціал подавати на ті ж самі електроди, на які подається
ВЧ-потенціал. Але система введення постійного потенціалу може суттєво погіршити електродинамічні ха-
рактеристики резонатора Н-типу. Запропоновано оптимальну конструкцію системи введення електростати-
чного потенціалу в такий резонатор.
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